DLA MIL-PRF-19500 317 P-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPES 2N2369A 2N3227 2N4449 2N2369AU 2N3227U 2N2369AUA 2N3227UA 2N2369AUB 2N2369AUBC 2N2369AUBCN N.pdf

1、 MIL-PRF-19500/317P 28 January 2013 SUPERSEDING MIL-PRF-19500/317N 27 December 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2369A, 2N3227, 2N4449, 2N2369AU, 2N3227U, 2N2369AUA, 2N3227UA, 2N2369AUB, 2N2369AUBC, 2N2369AUBCN 2N3227UB, 2N3227U

2、BC, 2N3227UBCN, 2N4449U, 2N4449UA, 2N4449UB, 2N4449UBC, AND 2N4449UBCN, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA, JANHCB, JANKCA, JANKCB, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all D

3、epartments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, high speed switching transistors

4、 (including dual devices). Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to four radiation levels is provided fo

5、r JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. * 1.2 Physical dimensions. See figure 1 (TO-18) for 2N2369A and 2N3227, figure 2 (TO-4

6、6) for 2N4449, figure 3 (UB, UBC, and UBCN), figure 4 (UA version), figure 5 (U version dual devices), and figures 6 and 7 (JANC die). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types PTTA= +25C PTTC= +125C PTTSP= +125C (1) VCBOVEBOVCEOVCESTJ and TSTG2N2369A, UA, UB, UBC, UBCN 2N44

7、49, UA, UB, UBC, UBCN 2N3227, UA, UB, UBC, UBCN 2N2369AU 2N4449U 2N3227U W 0.36 (2) 0.36 (2) 0.36 (2) 0.5 (5) 0.5 (5) 0.5 (5) W 0.36 (3)(4) 0.36 (3)(4) 0.36 (3)(4) W 0.36 (3) 0.36 (3) 0.36 (3) V dc 40 40 40 40 40 40 V dc 4.5 4.5 6.0 4.5 4.5 6.0 V dc 15 15 20 15 15 20 V dc 40 40 40 40 40 40 C -65 to

8、+200 See notes at end of table. AMSC N/A FSC 5961 INCH POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want

9、to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 28 April 2013. Provided by IHSNot for ResaleNo reproduction or networking perm

10、itted without license from IHS-,-,-MIL-PRF-19500/317P 2 * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. - Continued. Types RJARJCRJSPC/W C/W C/W 2N2369A 2N4449 2N3227 400 400 400 150 150 150 2N2369AUA, UB, UBC, UBCN 2N4449UA, UB, UBC, UBCN 2N3227UA, UB, UBC, UBCN 486 486 486 210 210 210

11、 2N2369AU 2N4449U 2N3227U 350 (6) 350 (6) 350 (6) 290 (7) 290 (7) 290 (7) * (1) Applicable for UA, UB, UBC, UBCN and U packages. (2) For TO-18 and TO-46 packages derate linearly 2.06 mW/C above TA= +25C. (3) Derate linerly 4.8 mW/C above TC=+125C. See figures 8, 9, 10, 11, and 12. (4) Power dissipat

12、ion limited to 360 mW per chip regardless of thermal resistance. * (5) For UA, UB, UBC, and UBCN packages mounted on FR-4 PCB (1 Oz. Cu) with contacts 20 mils larger than package pads. See figure 13. (6) One side only, derate linerly 2.857 mW/C above TSP= +25C. (7) Derate linearly 3.44 mW/C above TA

13、= +54.5C. See figure 13. 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. Type (1) hFE2(2) VCE= 0.4 V dc IC= 30 mA dc hFE4(2) VCE= 1.0 V dc IC= 100 mA dc hFE VCE= 10 V dc IC= 10 mA dc f = 100 MHz VCE(sat)1IC= 10 mA dc IB= 1 mA dc tonIC= 10 mA dc IB1= 3 mA dc IB2= -1.5 mA

14、 dc toffIC= 10 mA dc IB1= 3 mA dc IB2= -1.5 mA dc tsIC= 10 mA dc IB1= IB2= 10 mA dc 2N2369A 2N3227 2N4449 Min Max 30 120 40 250 30 120 Min Max 20 120 30 150 20 120 Min 5.0 5.0 5.0 Max 10 10 10 V dc Max 0.20 0.20 0.20 ns 12 12 12 ns 18 25 18 ns 13 18 13 (1) Electrical characteristics for the A, AU, A

15、UBC, U, UA, UB, and UBC suffix devices are identical to the corresponding non-suffix device. (2) Pulsed (see 4.5.1). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/317P 3 Dimensions Ltr. Inches Millimeters Notes Min Max Min Max CD .178

16、 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.70 19.05 7,8,13 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.250 6.35 7,8 P .100 2.54 5 Q .030 0.76 5 TL .028 .048 0.71 1.22 3,4 TW .036 .046 0.91 1.17 3 r .010 0.25 10 45 T

17、P 45 TP 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads

18、 at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diamet

19、er is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 = emitter, lead 2 = b

20、ase, lead 3 = collector. FIGURE 1. Physical dimensions TO-18 2N2369A and 2N3227. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/317P 4 Dimensions Ltr. Inches Millimeters Notes Min Max Min Max CD .178 .195 4.52 4.95 CH .065 .085 1.65 2.

21、16 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 5 LD .016 .021 0.41 0.53 LL .500 1.750 12.70 44.45 6 LU .016 .019 0.41 0.48 6 L1.050 1.27 6 L2.250 6.35 6 Q .040 1.02 3 TL .028 .048 0.71 1.22 8 TW .036 .046 0.91 1.17 4 r .010 0.25 9 45 TP 45 TP 5 NOTES: 1. Dimensions are in inches. 2. Millimeters are gi

22、ven for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Dev

23、ice may be measured by direct methods or by gauge. 6. Symbol LU applies between L1and L2. Dimension LD applies between L2and LL minimum. 7. Lead number three is electrically connected to case. 8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Symbol r applied to b

24、oth inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 11. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. FIGURE 2. Physical dimensions - TO-46 (2N4449). TO-46 Provided by IHSNot for ResaleNo reproduction or networking permitted without l

25、icense from IHS-,-,-MIL-PRF-19500/317P 5 * FIGURE 3. Physical dimensions, surface mount (UB, UBC, and UBCN versions, ceramic lid). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/317P 6 Dimensions Symbol Inches Millimeters Note Min Max

26、Min Max BL .115 .128 2.92 3.25 BW .095 .108 2.41 2.74 BH .046 .056 1.17 1.42 UB only, 4 BH .055 .069 1.40 1.75 UBC only, 5 BH .055 .069 1.40 1.75 UBCN only, 6 CL .128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.97 3 places LL2 .014 0.356 3 places LS1.035 .039 0.89 0.99 LS2.071 .079 1.80 2.01 LW .016 .024

27、 0.41 0.61 r .008 0.20 6 r1 .012 0.30 8 r2 .022 0.56 UB and UBC only, 8 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. UB only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = connected to t

28、he lid braze ring. 5. UBC (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = connected to the lid braze ring. 6. UBCN (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with three pads only. 7. For design reference only. 8. In accordance wit

29、h ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 3. Physical dimensions, surface mount (UB, UBC, and UBCN versions) - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/317P 7 Dimensions Ltr. Inches Millimeters M

30、in Max Min Max BL .215 .225 5.46 5.71 BL2.225 5.71 BW .145 .155 3.68 3.93 BW2 .155 3.93 CH .061 .075 1.55 1.90 L3.003 0.08 LH .029 .042 0.74 1.07 LL1 .032 .048 0.81 1.22 LL2 .072 .088 1.83 2.23 LS .045 .055 1.14 1.39 LW .022 .028 0.56 0.71 LW2.006 .022 0.15 0.56 Pin number. 1 2 3 4 Transistor Collec

31、tor Emitter Base N/C NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension CH controls the overall package thickness. When a window lid is used, dimension CH must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4.

32、 The corner shape (square, notch, radius) may vary at the manufacturers option, from that shown on the drawing. 5. Dimensions LW2 minimum and L3 minimum and the appropriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation

33、 was designed. (Castellations are required on the bottom two layers, optional on the top ceramic layer.) Dimension LW2 maximum and L3 maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. 6. Th

34、e co-planarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 4. Physical dimensions - surface mount (

35、UA version, 2N2369AUA, 2N3227UA). UA * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/317P 8 Dimensions Ltr. Inches Millimeters Min Max Min Max BL .240 .250 6.10 6.35 BL2 .250 6.35 BW .165 .175 4.19 4.44 BW2 .175 4.44 CH .066 .080 1.68

36、 2.03 L3 .003 .007 0.08 0.18 LH .026 .039 0.66 0.99 LL1 .060 .070 1.52 1.78 LL2 .082 .098 2.08 2.49 LS1 .095 .105 2.41 2.67 LS2 .045 .055 1.14 1.39 LW .022 .028 0.56 0.71 LW2 .006 .022 0.15 0.56 Pin number 1 2 3 4 5 6 Transistor Collector no. 1 Base no. 1 Base no. 2 Collector no. 2 Emitter no. 2 Emi

37、tter no. 1 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension CH controls the overall package thickness. When a window lid is used, dimension CH must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The corne

38、r shape (square, notch, radius) may vary at the manufacturers option, from that shown on the drawing. 5. Dimensions LW2 minimum and L3 minimum and the appropriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was desig

39、ned. (Castellations are required on the bottom two layers, optional on the top ceramic layer.) Dimension LW2 maximum and L3 maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. 6. The co-plana

40、rity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 5. Physical dimensions - surface mount (dual transis

41、tors, U version only, 2N2369AU, 2N3227U). U Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/317P 9 Die size: .020 x .020 inch .002 inch. Die thickness: .010 .0015 inch nominal. Top metal: Aluminum 10,000 minimum, 12,000 nominal. Back me

42、tal: Gold 3,500 minimum, 5,000 nominal. Backside: Collector. Bonding pad: B = .004 x .0045 inch, E = .0045 x .005 inch. FIGURE 6. JANHC and JANKC A-version die dimensions - 2N2369A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/317P 1

43、0 E BDie size: .016 inch x .016 inch. Die thickness: .008 inch .0016 inch. Base pad: .0036 inch x .0028 inch. Emitter pad: .0036 inch x .0028 inch. Back metal: Gold, 6,500 1,950 . Top metal: Aluminum, 17,500 2,500 . Back side: Collector. Glassivation: SiO2, 7,500 1,500 . FIGURE 7. JANHC and JANKC B-

44、version die dimensions - 2N2369A, 2N3227. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/317P 11 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

45、 section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documen

46、ts cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specif

47、ied, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these document

48、s are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3