DLA MIL-PRF-19500 350 L-2010 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON LOW POWER TYPES 2N3867 2N3867S 2N3867U4 2N3868 2N3868S AND 2N3868U4 JAN JANTX JANTXV JANS JANSM JANSD JANSPK.pdf

1、 MIL-PRF-19500/350L 5 July 2010 SUPERSEDING MIL-PRF-19500/350K 5 June 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW POWER TYPES 2N3867, 2N3867S, 2N3867U4, 2N3868, 2N3868S, AND 2N3868U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, J

2、ANSG, JANSH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification

3、 sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unenc

4、apsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which ha

5、ve passed RHA requirements. * 1.2 Physical dimensions. See figure 1 (TO- 5, TO-39), figure 2 (U4) , and figure 3 for JANHC and JANKC (B version die) dimensions. * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types PT (1) TA= +25C PT (1) TPCB= +25C PT (2) TC= +25C RJARJPCBRJCVCBOVCEOVEB

6、OICTJand TSTG2N3867, S 2N3868, S W 1.0 1.0 W W 10 10 C/W 175 175 C/W C/W 17.5 17.5 V dc Min 40 60 V dc Min 40 60 V dc 4.0 4.0 A dc 3.0 3.0 C -65 to +200 -65 to +200 2N3867U4 2N3868U4 1.0 1.0 35 35 175 175 5 5 40 60 40 60 4.0 4.0 3.0 3.0 -65 to +200 -65 to +200 (1) For derating, see figure 4, 5, 6 an

7、d 7. (2) For thermal curves, see figures 8, 9, 10 and 11. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since

8、 contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 5 October 2010. Provided by

9、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/350L 2 1.4 Primary electrical characteristics. hFECobo|hfe| VCE(sat)2 IE= 0 IC= 100 mA dc IC= 1.5 A dc IC= 1.5 A dc IC= 1.5 A dc VCE= 2 V dc IC= 3.0 A dc VCE= 5 V dc VCB= 10 V dc 100 kHz f 1 MHz VCE=

10、 5 V dc f = 20 MHz IB= 150 mA dc IB= 150 mA dc tontoff2N3867 2N3868 2N3867 2N3868 2N3867S 2N3868S 2N3867S 2N3968S 2N3867U4 2N3868U4 2N3867U4 2N3968U4 pF ns max ns max V dc Min Max 40 200 30 150 20 20 120 3 12 100 600 0.75 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are

11、specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are caution

12、ed that they must meet all specified requirements documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this documen

13、t to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-750 - Test Methods

14、 for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence Unless other

15、wise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

16、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/350L 3 Dimensions Symbol Inches Millimeters Note Min Max Min Max CD .305 .335 7.75 8.51 5, 6 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 4, 5 LC .200 TP 5.08 TP 7 LD .016 .019 0.41 0.48

17、8,9 LL See note 8, 14 LU .016 .019 0.41 0.48 8,9 L1.050 1.27 8,9 L2.250 6.35 8,9 P .100 2.54 7 Q .030 0.76 5 TL .029 .045 0.74 1.14 3,4 TW .028 .034 0.71 0.86 3 r .010 0.25 10 45 TP 45 TP 7 1, 2, 10, 12, 13, 14 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only

18、. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handli

19、ng. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension

20、LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME

21、Y14.5M, diameters are equivalent to x symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (1

22、9.05 mm) max. FIGURE 1. Physical dimensions (similar to TO-5, TO-39).TO-5, 39 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/350L 4 Symbol Dimensions Inches Millimeters Min Max Min Max BL .215 .225 5.46 5.72 BW .145 .155 3.68 3.94 CH .

23、049 .075 1.24 1.91 LH .020 0.51 LW1 .135 .145 3.43 3.68 LW2 .047 .057 1.19 1.45 LL1 .085 .125 2.16 3.17 LL2 .045 .075 1.14 1.9 LS1 .070 .095 1.78 2.41 LS2 .035 .048 0.89 1.21 Q1 .03 .070 0.76 1.78 Q2 .02 .035 0.51 0.89 TERM 1 Collector TERM 2 Base TERM 3 Emitter NOTES: 1. Dimensions are in inches. 2

24、. Millimeter equivalents are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions and configuration (SMD.22, U4). 1 U4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

25、IHS-,-,-MIL-PRF-19500/350L 5 B version 1. Chip size: .075 x .075 inch .002 inch (1.905 x 1.905 mm 0.051 mm). 2. Chip thickness: .010 inch .0015 inch nominal (0.254 mm 0.0381 mm). 3. Top metal: Aluminum 30,000 minimum, 33,000 nominal. 4. Back metal: Gold 3,500 minimum, 5,000 nominal. 5. Backside: Col

26、lector. 6. Bonding pad: B = .023 x .008 inch (0.5842 x 0.2032 mm), E = .049 x .008 inch (1.2446 x 0.2032 mm). * FIGURE 3. JANHCB and JANKCB die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/350L 6 3. REQUIREMENTS 3.1 Gener

27、al. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified ma

28、nufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in M

29、IL-PRF-19500 and on figures 1, 2, and 3. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). * 3.4.2 Construction. These devices shall be constr

30、ucted in a manner and using materials which enable the devices to meet the applicable requirements of MIL-PRF-19500 and this document. * 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. * 3.6 Ele

31、ctrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. * 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I and II herein. * 3.8 M

32、arking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). * 3.9 Workmanship. Semiconductor devices shall be processed in su

33、ch a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION * 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Sc

34、reening (see 4.3). * c. Conformance inspection (see 4.4 and tables I, II, III, and IV). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in

35、accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/350L 7 * 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to

36、a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANS, J

37、ANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MI

38、L-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.3) Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.3) 9 ICEX1and hFE2Not applicable 10 24 hours minimum 24 hours minimum 11 ICEX1; hFE2; ICEX1= 100 percent of initial valu

39、e or 200 nA dc, whichever is greater; hFE2= 15 percent of initial value ICEX1; hFE212 See 4.3.2 See 4.3.2 13 Subgroup 2 and 3 of table I herein; ICEX1= 100 percent of initial value or 200 nA dc, whichever is greater; hFE2= 15 percent of initial value Subgroup 2 of table I herein; ICEX1= 100 percent

40、of initial value or 200 nA dc, whichever is greater; hFE2= 15 percent of initial value (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in acco

41、rdance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc. Power shall be applied to ach

42、ieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justificati

43、on demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. * 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD

44、-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified h

45、erein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of subgroup 1 and 2 of table I herein, inspection only (table E-VIb, group B, subgroup 1 is not required to be performed since solderability

46、 and resistance to solvents testing is performed in table I herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/350L 8 * 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

47、herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in E-VIa (JANS) and 4.4.2.1 herein. El

48、ectrical measurements (end-points) and delta requirements shall be in accordance with table I, subgroup 2 and table IV herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements JAN, JANTX, and JANTXV shall be after each step in 4.4.2.

49、2 and shall be in accordance with table I, subgroup 2 and table IV herein. * 4.4.2.1 Group B inspection, appendix E, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB= 10 V dc; 2,000 cycles adjust device current, or power, to achieve a minimum TJof +100C. B5 1027 (NOTE: If a failure occurs, resubmission shall