DLA MIL-PRF-19500 354 L-2010 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON LOW-POWER TYPES 2N2604 2N2604UB 2N2605 AND 2N2605UB JAN JANTX JANTXV AND JANS JANHC JANKC.pdf

1、 MIL-PRF-19500/354L 14 July 2010 SUPERSEDING MIL-PRF-19500/354K 15 December 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER, TYPES 2N2604, 2N2604UB, 2N2605, AND 2N2605UB, JAN, JANTX, JANTXV, AND JANS, JANHC, JANKC This specification is approved for use

2、by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power transistors fo

3、r use in low noise level amplifier applications. Four levels of product assurance are provided for each encapsulated device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500. * 1.2 Physical dimensions. See figure 1 (TO-46), figure 2 (UB), and figures 3, and 4 die.

4、 1.3 Maximum ratings unless otherwise specified, TA= +25C. Types VCBOVEBOVCEOICTJand TSTGV dc V dc V dc mA dc C 2N2604, UB 80 6 60 30 -65 to +200 2N2605, UB 70 6 60 30 -65 to +200 Type PT(1) TA= +25C PT(1) TC= +25C PT(1) TSP= +25C RJA(2) RJC(2) RJSP(2) mW mW mW C/W C/W C/W 2N2604 400 400 N/A 437 175

5、 N/A 2N2604UB 400 N/A 360 275 N/A 100 2N2605 400 400 N/A 437 175 N/A 2N2605UB 400 N/A 360 275 N/A 100 (1) For derating, see figures 5, 6, 7, and 8. (2) For thermal impedance curves see figures 9, 10, 11, and 12. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document shou

6、ld be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist

7、.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 14 October 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/354L 2 * 1.4 Primary electrical characterist

8、ics. hFE1hfe|hfe| CoboVBE(sat)VCE(sat)VCE=5 V dc IC=10 A dc VCE=5 V dc IC=1 mA dc f=1 kHz VCE=5 V dc IC=500 A dc f=30 MHz VCB=5 V dc IE=0 100 kHz f 1 MHz IC=10 mA dc IB=500 A dc IC=10 mA dc IB=500 A dc Min Max 2N2604, UB 40 120 2N2605, UB 100 300 2N2604, UB 60 180 2N2605, UB 150 450 1 8 pF 6 V dc 0.

9、7 0.9 V dc 0.3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While e

10、very effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, a

11、nd handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconduc

12、tor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700

13、 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document,

14、 however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be prod

15、ucts that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/354L

16、3 Dimensions Symbol Inches Millimeters Note Min Max Min Max CD .178 .195 4.52 4.95 CH .065 .085 1.65 2.16 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 5 LD .016 .021 0.41 0.53 6 LL .500 1.750 12.70 44.45 6 LU .016 .019 0.41 0.48 6 L1.050 1.27 6 L2.250 6.35 6 Q .040 1.02 4 TL .028 .048 0.71 1.22 3, 8 TW

17、 .036 .046 0.91 1.17 3, 8 r .010 0.25 9 45 TP 45 TP 5 NOTES: 1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. 2. Millimeters are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. L

18、eads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure. 6. Symb

19、ol LU applies between L1and L2. Dimension LD applies between L2and LL minimum. 7. Lead number three is electrically connected to case. 8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Symbol r applied to both inside corners of tab. 10. In accordance with ASME Y14

20、.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions - (TO-46). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/354L 4 Symbol Dimensions Note Symbol Dimensions Note Inches Millimeters Inches Millimeters Min Max Mi

21、n Max Min Max Min Max BH .046 .056 1.17 1.42 LS1 .035 .039 0.89 0.99 BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 CW .108 2.74 r1 .012 0.31 LL1 .022 .038 0.56 0.97 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are i

22、n inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Ph

23、ysical dimensions, surface mount (UB version). UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/354L 5 1. Chip size .015 x .019 inch .001 inch, (0.381 x 0.483 0.0254 mm). 2. Chip thickness .010 .0015 inch, (0.254 0.381). 3. Top metal

24、Aluminum 15,000 minimum, 18,000 nominal. 4. Back metal A. Gold 2,500 minimum, 3,000 nominal. B. Eutectic Mount - No Gold. 5. Backside Collector. 6. Bonding pad B = .003 inch, (0.076 mm), E = .004 inch, (0.102 mm) diameter. 7. Passivation Si3N4(Silicon Nitride) 2k min, 2.2k nom. FIGURE 3. JANHC and J

25、ANKC A-version die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/354L 6 Die size: .018 x .018 inch (0.457 x 0.457 mm). Die thickness: .008 .0016 inch (0.203 0.0406 mm). Base pad: .0025 inch (0.0635 mm) diameter. Emitter pa

26、d: .003 inch (0.076 mm) diameter. Back metal: Gold, 6,500 1,950 Ang. Top metal: Aluminum, 19,500 2,500 Ang. Back side: Collector. Glassivation: SiO2, 7,500 1,500 Ang. FIGURE 4. JANHC and JANKC B-version die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without lice

27、nse from IHS-,-,-MIL-PRF-19500/354L 7 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. RJAThermal resistance junction to ambient. RJCThermal resistance junction to case. RJSPThermal resistance junc

28、tion to solder pads. TSPTemperature of solder pads. UB Surface mount case outline (see figure 2). 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (TO-46), figure 2 (UB), and on figures 3 and 4 die. 3.4.1 Lead finish.

29、 Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

30、 characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner

31、as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4

32、.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E q

33、ualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in t

34、he prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/354L 8 4.2.2.1 Group E thermal response. With extremely small junction devices

35、such as this one, a true thermal impedance cannot be measured, only calculated. While “thermal response” has been substituted for “thermal impedance” herein, the terms, units, and procedures is essentially unchanged. Each supplier shall submit a thermal response (ZJX) histogram of the entire qualifi

36、cation lot. The histogram data shall be taken prior to the removal of devices that are atypical for thermal response. Thermal response curves (from ZJXtest pulse time to RJXminimum steady-state time) of the best device in the qual lot and the worst device in the qual lot (that meets the supplier pro

37、posed screening limit), or from the thermal grouping, shall be submitted. The optimal test conditions and proposed initial thermal response screening limit shall be provided in the qualification report. Data indicating how the optimal test conditions were derived for ZJXshall also be submitted. The

38、proposed maximum thermal response ZJXscreening limit shall be submitted. The qualifying activity may approve a different ZJXlimit for conformance inspection end-point measurements as applicable. Equivalent data, procedures, or statistical process control plans may be used for part, or all, of the ab

39、ove requirements. The approved thermal response conditions and limit for ZJXshall be used by the supplier in screening and table I, subgroup 2. The approved thermal resistance conditions for RJXshall be used by the supplier for conformance inspection. For product families with similar thermal charac

40、teristics based on the same physical and thermal die, package, and construction combination (thermal grouping), the supplier may use the same thermal response curves. * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as spec

41、ified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (response) method 3131

42、of MIL-STD-750. See 4.3.3. Thermal impedance (response) method 3131 of MIL-STD-750. See 4.3.3. * 9 ICBO2and hFE2Not applicable 10 24 hours minimum 24 hours minimum * 11 ICBO2; hFE2; ICBO2= 100 percent or 2 nA dc, whichever is greater; hFE2= 15 percent change of initial value. ICBO2and hFE2 12 See 4.

43、3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ICBO2= 100 percent or 2 nA dc, whichever is greater; hFE2= 15 percent change of initial value. Subgroup 2 of table I herein; ICBO2= 100 percent or 2 nA dc, whichever is greater; hFE2= 25 percent change of initial value. (1) Shall be performed any

44、time after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/354L 9 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB=

45、10 - 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum, TAambient rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be u

46、sed for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die

47、shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance“. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.3 Thermal response (VBE measurements). The VBEmeasurements shall be performed in accordance with meth

48、od 3131 of MIL-STD-750 using the guidelines in that method for determining VH, VCE, IM, IH, tH, and tMD. The VBElimit used in screen 3c of 4.3 herein and table I, subgroup 2 shall be set statistically by the supplier over several die lots and submitted to the qualifying activity for approval. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted i