DLA MIL-PRF-19500 371 H-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH POWER TYPES 2N3902 2N3902T1 2N3902T3 2N5157 2N5157T1 AND 2N5157T3 JAN JANTX AND JANTXV.pdf

1、 MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND 2N5157T3, JAN, JANTX, AND JANTXV This specification is approved for

2、use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistor

3、s. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-3), figure 2 (TO-254AA, T1), and figure 3 (TO-257AA, T3). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT PT (1) TC= +25C RJC(

4、2) VCBOVCEOVEBOIBICTJand TSTG W W C/W V dc V dc V dc A dc A dc C 2N3902 5.0 125 1.25 700 400 5.0 2.0 3.5 -65 to +200 2N3902T1 2N3902T3 6.0 4.0 175 (3) 125 1.00 1.30 700 700 400 400 5.0 5.0 2.0 2.0 3.5 3.5 -65 to +200 -65 to +200 2N5157 5.0 125 1.25 700 500 6.0 2.0 3.5 -65 to +200 2N5157T1 2N5157T3 6

5、.0 4.0 175 (3) 125 1.00 1.30 700 700 500 500 6.0 6.0 2.0 2.0 3.5 3.5 -65 to +200 -65 to +200 (1) See figures 4, 5, and 6 for temperature-power derating curves. (2) For thermal impedance curves, see figures 7, 8, and 9. (3) For TO-257 devices with typical mounting and small footprint, conservatively

6、rated at 125 W and 1.3C/W only. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want

7、to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this document shall be completed by 13 February 2014. Provided by IHSNot for ResaleNo reproduction or networking p

8、ermitted without license from IHS-,-,-MIL-PRF-19500/371H 2 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. hFE1 (1) hFE2 (1) VCE(SAT)1VBE(SAT)1 Cobo|hfe| Switching VCE= 5 V dc IC = 0.5 A dc VCE= 5 V dc IC= 1.0 A dc IC= 1.0 A dc IB= 0.1 A dc IC= 1.0 A dc IB= 0.1 A dc VCB

9、= 10 V dc IE= 0 100 kHz f 1 MHz VCE= 10 V dc IC= 0.2 A dc f = 1 MHz tontoffV dc V dc pF s s Min 25 30 2.5 Max 90 0.8 1.5 250 25 0.8 1.7 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This s

10、ection does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents

11、 cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specifie

12、d, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents

13、are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cite

14、d herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/371H 3 Di

15、mensions Ltr Inches Millimeters Notes Min Max Min Max CD .875 22.22 3 CH .250 .328 6.35 8.33 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 6 HT .060 .135 1.52 3.43 LD .038 .043 0.97 1.09 4, 5, 9 LL .312 .500 7.92 12.70 4, 5, 9 L1.050 1.27 5, 9 MHD .151 .161 3.84 4.09 7 MHS 1.177 1.197 29.90 30.40

16、PS .420 .440 10.67 11.18 PS1.205 .225 5.21 5.72 5 S1 .655 .675 16.64 17.15 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Body contour is optional within zone defined by CD. 4. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inc

17、h (1.40 mm) below seating plane. When gauge is not used, measurement shall be made at seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case. 9. LD applies between L1and LL. Lead dia

18、meter shall not exceed twice LD within L1 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 11. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the

19、 header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. FIGURE 1. Physical dimensions, TO-3 (2N3902, 2N5157). TO-3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/371H 4 Symbol Dimensions Inches Millim

20、eters Min. Max. Min. Max. BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 TERM 1 Base T

21、ERM 2 Collector TERM 3 Emitter NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. Methods used for electrical isolation of the terminals feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3

22、(ceramic). 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, 2N3902T1, 2N5157T1 (TO-254AA). . TO-254 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/371H 5 NOTES: 1. Dimensions ar

23、e in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. Methods used for electrical isolation of the terminals feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3 (ceramic). 5. In accordance with ASME Y14.5M, diameter

24、s are equivalent to x symbology. FIGURE 3. Physical dimensions, 2N3902T3, 2N5157T3 (TO-257AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .410 .430 10.41 10.92 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .500 .750 12.70 19.05 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.5

25、6 3.81 MHO .527 .537 13.39 13.63 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Base Term 2 Collector Term 3 Emitter TO-257 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/371H 6 3. REQUIREMENTS 3.1 Gene

26、ral. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified m

27、anufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified

28、 in MIL-PRF-19500, figure 1 (TO-3), figure 2 (TO-254AA), and figure 3 (TO-257AA) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2)

29、. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall

30、 be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of the country of origin may be omitted from the body of the transistor but shall be retained on the initial container. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in qual

31、ity and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance insp

32、ection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to

33、a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for R

34、esaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/371H 7 * 4.3 Screening (JANTX and JANTXV level). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I her

35、ein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANTX and JANTXV only (1) 3c Thermal impedance (transient), method 3131 of MIL-STD-750 (see 4.3.2) 10 VCB= 80 percent of maximum rated 11 hFE2and ICEX112 See 4.3.1 13 I

36、CEX1= 100 percent of initial value or 2 A dc, whichever is greater. hFE2= 25 percent of initial value; subgroup 2 of table I herein 17 For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.3), Endpoints: Subgroup 2 of table I herein. (1) Thermal impedance limits shall not exceed as shown in fig

37、ures 7, 8, and 9. This test shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-

38、750; VCB= 10-30 V dc, TJ = +175C minimum. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD, tSW, (and VHwhere appropriate). The thermal impedance limit used

39、 in screen 3c of 4.3 herein and table I shall comply with the thermal impedance graph in figure 7, 8, and 9 (less than or equal to the curve value at the same tHtime) and shall be less than the process determined statistical maximum limit as outlined in method 3131. * Provided by IHSNot for ResaleNo

40、 reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/371H 8 * 4.3.3 Dielectric withstanding voltage. a. Magnitude of test voltage.900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltage.All leads to case (bunch connec

41、tion). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500 V/second. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspec

42、tion. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with applicable inspections of table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.4.2 Group B inspe

43、ction. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein

44、. Subgroup Method Condition B3 1037 VCB= 10-30 V dc, ton= toff= 3 minutes, 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-poin

45、ts) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition A, weight = 10 pounds, t = 15 s. C5 3131 See 4.5.2, RJC= 1.25C/W for 2N3902, 2N5157; RJC= 1.0C/W for 2N3902T1, 2N5157T1; and RJC= 1.30C/W for 2N3902T3 and 2N5157T3. C6 1037 VCB= 10-30 V dc, t

46、on= toff= 3 minutes, 6,000 cycles. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with tab

47、le I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. The thermal resistance meas

48、urements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See MIL-PRF-19500, table E-IX, group E, subgroup 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/371H 9 TABLE I. Group A inspection. Inspection 1/ 2/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical 2071 examination Subgroup 2 Thermal impedance 3/ 31