DLA MIL-PRF-19500 382 J-2012 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON LOW-POWER TYPES 2N2944A 2N2945A 2N2945AM AND 2N2946A 2N2944AUB 2N2945AUB 2N2945AUBM AND 2N2946AUB JAN JANTX .pdf

1、 MIL-PRF-19500/382J 18 April 2012 SUPERSEDING MIL-PRF-19500/382H 16 June 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER, TYPES 2N2944A, 2N2945A, 2N2945AM, AND 2N2946A, 2N2944AUB, 2N2945AUB, 2N2945AUBM, AND 2N2946AUB, JAN, JANTX, JANTXV, JANS, JANHC,

2、JANKC, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The r

3、equirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for low-power, high-speed chopper, PNP, silicon transistors. A M and UBM suffix will indicate a matched pai

4、r. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA) level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appe

5、nded to the device prefix to identify devices which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (similar to TO-46), figure 2 (surface mount), and figure 3 (die). 1.3 Maximum ratings, unless otherwise specified TA= +25C.Types PT TA= +25C (1) (2) PT TSP= +25C (1) (2) VEBOVCBOVC

6、EOVECOICTJand TSTGRJA (3) (4) RJSP 2N2944A 2N2945A, AM 2N2946A mW 400 400 400 mW N/A N/A N/A V dc -15 -25 -40 V dc -15 -25 -40 V dc -10 -20 -35 V dc -10 -20 -35 mA dc -100 -100 -100 C -65 to +200 C/W 435 435 435 C/W N/A N/A N/A 2N2944AUB 2N2945AUB 2N2945AUBM 2N2946AUB 400 400 400 400 800 800 800 800

7、 -15 -25 -25 -40 -15 -25 -25 -40 -10 -20 -20 -35 -10 -20 -20 -35 -100 -100 -100 -100 -65 to +200 435 (5) 435 (5) 435 (5) 435 (5) 90 90 90 90 (1) For derating, see figures 4 and 5. (2) See 3.3 for abbreviations. (3) For thermal curves, see figures 6 and 7. AMSC N/A FSC 5961 INCH-POUND * Comments, sug

8、gestions, or questions on this document should be to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at

9、 https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 18 June 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/382J 2 1.3 Maximum ratings, unles

10、s otherwise specified TA= +25C. - Continued.(4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figure 6 for the UB package and use RJA. (5) TA= +55C for UB on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1 - layer 1 Oz Cu, horizontal, st

11、ill air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.22 mm), RJAwith a defined thermal resistance condition included is measured at PT= 400 mW. 1.4 Primary electrical characteristics unless otherwise specified TA= +25C. Limits hFE1VCE= -0.5 V dc IC= -1 mA dc hFE(inv)1VEC= -0.5 V dc IE= -200 A dc

12、rec(on)2IB= -1 mA dc Ie= 100 A ac(rms) IE= 0; f = 1 kHz 2N2944A, UB 2N2945 2N2946A,UB 2N2944A, UB 2N2945A, 2N2945AUB, 2N2945AM, 2N2945AUBM 2N2946A, UB 2N2944A, UB 2N2945A, 2N2945AUB, 2N2945AM, 2N2945AUBM A, UB AM, AUBM Min Max 100 70 70 200 50 50 30 20 ohms 4 ohms 6 Limits rec(on)2IB= -1 mA dc VEC(o

13、fs) Ie= 100 A ac(rms) IE= 0; f = 1 kHz IB= -200 A dc IE= 0 Ib= -1.0 mA dc IE= 0 2N2946A, UB 2N2944A, UB 2N2945A, 2N2945AUB, 2N2945AM, 2N2945AUBM 2N2946A, UB 2N2944A, UB 2N2945A, 2N2945AUB, 2N2945AM, 2N2945AUBM 2N2946A, UB Min Max ohms 8 mV dc -0.3 mV dc -0.5 mV dc -0.8 mV dc -0.6 mV dc -1.0 mV dc -2

14、.0 Limits hfe f = 1 MHz VCE= -6 V dc IC= -1 mA dc Cobo VCB= -6 V dc IE= 0 100 kHz f 1 MHz CiboVEB= -6 V dc IC= 0 100 kHz f 1 MHz 2N2944A, UB 2N2945A, 2N2945AUB, 2N2945AM, 2N2945AUBM 2N2946A, UB 2N2945A, 2N2945AUB, 2N2945AM, 2N2945AUBM Min Max 15 55 10 55 5 55 pF 10 pF 6 Provided by IHSNot for Resale

15、No reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/382J 3 Dimensions Ltr. Inches Millimeters Notes Min Max Min Max CD .178 .195 4.52 4.95 CH .065 .085 1.65 2.16 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 5 LD .016 .021 0.41 0.53 LL .500 1.750 12.70 44.45 6 LU .016 .019

16、 0.41 0.48 6 L1 .050 1.27 6 L2 .250 6.35 6 Q .040 1.02 3 TL .028 .048 0.71 1.22 8 TW .036 .046 0.91 1.17 4 r .010 0.25 9 45 TP 45 TP 5 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zo

17、ne are optional. 5. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gauge. 6. Symbol LU applies between L1and L2. Dimension LD appli

18、es between L2and LL minimum. 7. Lead number three is electrically connected to case. 8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Symbol r applied to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 11.

19、Lead 1 is emitter, lead 2 is base, and lead 3 is collector. FIGURE 1. Physical dimensions (similar to TO-46). TO-46 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/382J 4 Symbol Dimensions Note Symbol Dimensions Note Inches Millimeters

20、Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1 .035 .039 0.89 0.99 BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 CW .108 2.74 r1 .012 0.31 LL1 .022 .038 0.56 0.97 r2 .022 0.56 LL2 .017 .035 0.43 0.

21、89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent t

22、o x symbology. FIGURE 2. Physical dimensions, surface mount (UB version). UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/382J 5 E BDie size: .020 x .020 inch (0.508 mm x 0.508 mm). Die thickness: .008 .0016 inch (0.203 mm 0.041 mm).

23、 Base pad: .002 x .003 inch (0.051 mm x 0.076 mm). Emitter pad: .004 x .004 inch (0.102 mm x 0.102 mm). Back metal: Gold, 6,500 1,950 Ang. Top metal: Aluminum, 14,500 2,500 Ang. Back side: Collector. Glassivation: SiO2, 7,500 1,500 Ang. FIGURE 3. Physical dimensions, JANKCA2N2944A through 2N2946A di

24、e (also valid for JANHCA2N2944A through 2N2946A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/382J 6 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specificatio

25、n. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of

26、documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise

27、 specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these doc

28、uments are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event

29、of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item r

30、equirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before c

31、ontract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. hFE(inv) Forward-current transfer ratio except that the collector and emitter shall be interchanged in the test cir

32、cuit, i.e., IE /IB. IeEmitter current (rms). M Matched pair. rec(on) Small-signal emitter-collector on-state resistance. RJSPThermal resistance junction to solder pads. V(BR)ECOBreakdown voltage, emitter to collector, with base open-circuited. VEC(ofs) Emitter to collector offset voltage, i.e., open

33、-circuit voltage between emitter collector when the base- collector junction is forward-biased. VecEmitter to collector voltage (rms). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/382J 7 3.4 Interface and physical dimensions. Interfa

34、ce and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (similar to TO-46), figure 2 (surface mount), and figure 3 (die). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired,

35、 it shall be specified in the acquisition document (see 6.2). * 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the

36、 electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I, and herein. * 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, mar

37、king may be omitted from the body, but shall be retained on the initial container. The radiation hardness designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices sh

38、all be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION * 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspe

39、ction (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.4 and table I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1. JANHC and JANKC qualification. JANHC and JANKC qualification inspection

40、shall be in accordance with MIL-PRF-19500. * 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the te

41、sts specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/382J 8 4.3 Screen

42、ing (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see tabl

43、e E-IV Measurement of MIL-PRF-19500) JANS JANTX and JANTXV (1) 3c Required, method 3131 of MIL-STD-750. (see 4.3.3) Required, method 3131 of MIL-STD-750. (see 4.3.3) 9 ICBO1and hFE(inv)1Not applicable 11 ICBO1; hFE(inv)1; ICBO1= 100 percent of initial value or 0.2 nA dc for 2N2944 and 2N2945, 0.5 nA

44、 dc for 2N2946 hFE(inv)1= 25 percent of initial value. ICBO1and hFE(inv)112 See 4.3.2 See 4.3.2. 13 Subgroups 2 and 3 of table I herein; ICBO1= 100 percent of initial value or 0.2 nA dc for 2N2944 and 2N2945, 0.5 nA dc for 2N2946; hFE(inv)1= 25 percent of initial value. Subgroups 2 of table I herein

45、; ICBO1= 100 percent of initial value or 0.2 nA dc for 2N2944A, 2N2945A, 2N2945AM, 2N2945AUB, and 2N2945AUBM. 0.5 nA dc for 2N2946A; hFE(inv)1= 25 percent of initial value. * (1) Shall be performed any time after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in s

46、creening requirements. 4.3.1 Screening (JANHC and JANKC). Screening for JANHC and JANKC die shall be in accordance with MIL-PRF-19500 “Discrete Semiconductor Die/Chip Lot Acceptance“. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.2 Power bu

47、rn-in conditions. Power burn-in conditions are as follows: VCB= 10 to 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours,

48、bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. Use method 310

49、0 of MIL-STD-750 to measure TJ. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD, (and VCwhere appropriate). Provided by IHSNot for ResaleNo reproduction or networking permitted without license