DLA MIL-PRF-19500 394 N-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER SWITCHING TYPES 2N4150 2N5237 2N5238 2N4150S 2N5237S AND 2N5238S JAN JANTX JANTXV JANS JANSM JANSD JA.pdf

1、 MIL-PRF-19500/394N 6 August 2012 SUPERSEDING MIL-PRF-19500/394M 15 July 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING, TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JA

2、NSF, JANSG, JANSH, JANHCA, JANHCB, JANKCA, JANKCB, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, and JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this

3、 specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of pr

4、oduct assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to four radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the d

5、evice prefix to identify devices which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (TO- 5) and figures 2 and 3 (JANHC and JANKC). 1.3 Maximum ratings unless otherwise specified TA= +25C. Types PT(1) TA= +25C PT(2) TC= +25C RJA(max) (3) RJC(max) (4) VCBOVCEOVEBOICTSTGand TJ2N4

6、150, S 2N5237, S 2N5238, S W 1.0 1.0 1.0 W 15 15 15 C/W 175 175 175 C/W 10 10 10 V dc 100 150 200 V dc 70 120 170 V dc 10 10 10 A dc 10 10 10 C -65 to +200 (1) For derating see figure 4. (2) For derating see figure 5. (3) For thermal impedance curve see figure 6. (4) For thermal impedance curve see

7、figure 7. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency

8、 of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 November 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without licens

9、e from IHS-,-,-MIL-PRF-19500/394N 2 1.4 Primary electrical characteristics unless otherwise specified TA= +25C. hFE2(1) hFE3(1) Cobo|hfe| VBE(sat)(1) VCE(sat)1Limits IC= 5 A dc IC= 10 A dc IE= 0 IC= 0.2 A dc IC= 5 A dc IC= 5 A dc VCE= 5 V dc VCE= 5 V dc VCB= 10 V dc VCE= 10 V dc IB= 0.5 A dc IB= 0.5

10、 A dc 100 kHz f 1 MHz f = 10 MHz pF V dc V dc Min 40 10 1.5 Max 120 350 7.5 1.5 0.6 (1) Pulsed, (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other se

11、ctions of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification

12、, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in

13、 the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quick

14、search/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references

15、 cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/394N

16、 3 Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 6 LD .016 .021 0.41 0.53 7, 8 LL See notes 7, 8, 11,12 LU .016 .019 0.41 0.48 7, 8 L1.050 1.27 7, 8 L2.250 6.35 7, 8 P .100 2.54 5 Q .050 1.27 4 r .01

17、0 0.25 10 TL .029 .045 0.74 1.14 3 TW .028 .034 0.71 0.86 2 45TP 45TP 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body

18、contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between

19、L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. For 2N4150, 2N5237, and 2N5238 dimension L

20、L shall be 1.5 inches (38.1 mm) minimum and 1.75 inches (44.4 mm) maximum. 12. For 2N4150S, 2N5237S, and 2N5238S, dimension LL shall be .5 inch (12.7 mm) minimum and .75 inch (19.0 mm) maximum. 13. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 14. Lead 1 = emitter, lead 2

21、= base, lead 3 = collector. FIGURE 1. Physical dimensions (TO-5). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/394N 4 NOTES: 1. Chip size: .128 x .128 inch .002 inch (3.25 x 3.25 0.051 mm). * 2. Chip thickness: .015 inch (0.254 mm) n

22、ominal. 3. Top metal: Aluminum 30,000 minimum, 33,000 nominal. 4. Back metal: Gold 3,500 minimum, 5,000 nominal. 5. Backside: Collector. 6. Bonding pad: B = .052 x .012 inch (1.321 x 0.305 mm), E = .084 x .012 inch (2.134 x 0.305 mm). * FIGURE 2. JANHC and JANKC A-version die dimensions. Provided by

23、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/394N 5 NOTES: 1. Die size: .155 x .155 inch (3.937 x 3.937 mm). 2. Die thickness: .008 .0016 inch (0.2032 0.04064 mm). 3. Base pad: .012 x .090 inch (0.3048 x 2.286 mm). 4. Emitter pad: .012 x .090 i

24、nch. 5. Back metal: Gold, 2,400 720 . 6. Top metal: Aluminum, 37,500 7,500 . 7. Back side: Collector. 8. Glassivation: SiO2, 7,500 1,500 . FIGURE 3. JANHC and JANKC B-version die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-195

25、00/394N 6 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis

26、ting on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. PCB Printed circuit board. RJAThermal resistance juncti

27、on to ambient. RJCThermal resistance junction to case. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-5) and on figures 2 and 3 (JANHC and JANKC) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accord

28、ance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices to meet the applicable requirements

29、 of MIL-PRF-19500 and this document. 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance cha

30、racteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately p

31、recede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFI

32、CATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall

33、 be in accordance with MIL-PRF-19500 and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/394N 7 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case

34、qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualific

35、ation. 4.2.2 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. * 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements

36、 shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750, (see 4.3.3). Thermal impedance, me

37、thod 3131 of MIL-STD-750, (see 4.3.3). 9 ICBO2and hFE1Not applicable 10 48 hours minimum 48 hours minimum 11 ICBO2; hFE1; ICB02= 100 percent of initial value or 50 nA dc, whichever is greater; hFE1= 15 percent of initial value. ICBO2and hFE112 See 4.3.2 See 4.3.2 13 Subgroups 2 and 3 of table I here

38、in; ICB02= 100 percent of initial value or 50 nA dc, whichever is greater; hFE1= 15 percent of initial value. Subgroup 2 of table I herein; ICB02= 100 percent of initial value or 50 nA dc, whichever is greater; hFE1= 15 percent of initial value. * (1) Shall be performed anytime after temperature cyc

39、ling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows

40、 JANS requirements; the JANHC follows JANTX requirements. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 Vdc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum rated as defined in 1.3. With approval of the qualifyin

41、g activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will b

42、e essential criteria for burn-in modification approval. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). See table II, subgroup 4

43、herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/394N 8 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance

44、 with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIB, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Grou

45、p A inspection shall be conducted with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIA (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points

46、) and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.2 herein: delta requirements only apply to subgroups B4 and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be aft

47、er each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 and 4.5.2 herein. 4.4.2.1 Group B inspection (JANS), table E-VIA of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB= 10 V dc, 2,000 cycles, adjust device current, or power, to achieve a minimum TJof +100C. B5 1027 VCB=

48、10 V dc; PD 100 percent of maximum rated PT(see 1.3). (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table E-VIa, adjust TAor PDto achieve TJ= +275C minimum. Option 2: 216 hour

49、s minimum, sample size = 45, c = 0; adjust TAor PDto achieve a TJ= +225C minimum. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI, (conformance inspect