DLA MIL-PRF-19500 412 F-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N3846 2N3846T1 2N3846T3 2N3847 2N3847T1 AND 2N3847T3 JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/412F 13 December 2013 SUPERSEDING MIL-PRF-19500/412E 30 April 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N3846, 2N3846T1, 2N3846T3, 2N3847, 2N3847T1, AND 2N3847T3, JAN, JANTX, JANTXV, AND JANS This specification is approved for u

2、se by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Fo

3、ur levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 herein (TO-63), figure 2 (TO-254AA), and figure 3 (TO-257AA). 1.3 Maximum ratings. Types PT= TA= +25C PT= TC= +25C (1) RJC(2) VEBOVCBOVCEOICTSTGand TJ2N3846 2N3846T1

4、2N3846T3 2N3847 2N3847T1 2N3847T3 W 4 4 4 4 4 4 W 150 150 (3) 125 150 150 (3) 125 C/W 1.0 1.0 1.3 1.0 1.0 1.3 V dc 10 10 10 10 10 10 V dc 300 300 300 400 400 400 V dc 200 200 200 300 300 300 A dc 20 20 20 20 20 20 C -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 (1) For dera

5、ting, see figures 4 and 5. (2) For thermal impedance curves, see figures 6 and 7. (3) For TO-257 devices with typical mounting and small footprint, conservatively rated at 125 W and 1.3C/W only. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed t

6、o DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. The documentation and proce

7、ss conversion measures necessary to comply with this document shall be completed by 13 February 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/412F 2 1.4 Primary electrical characteristics. hFE3VCE= 3 V dc IC= 10 A dc |hfe| VCE=

8、10 V dc IC= 1 A dc VBEVCE= 3 V dc IC= 10 A dc VCE(sat)IB= 1.6 A dc IC= 10 A dc CoboVCB= 10 V dc IE= 0 (1) f = 1MHz (1) (1) 100 kHz f 1 MHz Min Max 12 60 10 35 V dc 1.2 V dc 0.75 pF 750 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in

9、sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they

10、must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the e

11、xtent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Sem

12、iconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. In the event of a conflict between th

13、e text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as

14、specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see

15、 4.2 and 6.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/412F 3 Ltr Dimensions Notes Inches Millimeters Min Max Min Max A1.300 7.62 CD .745 DIA .775 DIA 18.92 DIA 19.69 DIA CD1.775 DIA .875 DIA 19.685 DIA 22.23 DIA CH .480 .535 12

16、.19 13.59 HF .855 .875 21.72 22.23 HT .090 .167 2.29 4.24 OAH .937 1.030 23.80 26.16 7 PS .485 .515 12.32 13.08 4, 6 PS1.240 .260 6.10 6.60 4, 6 SL .460 .495 11.68 12.57 SU .105 2.67 8 T .060 DIA .105 DIA 1.52 DIA 2.67 DIA T1.060 DIA .105 DIA 1.52 DIA 2.67 DIA 2 UD .278 .312 7.06 7.92 NOTES: 1. Dime

17、nsions are in inches. 2. Millimeters are given for general information only. 3. See FED-STD-H28A. 4. The collector (hook) is electrically connected to the case. The other two terminals shall be electrically isolated from the case. 5. The orientation of the terminals in relation to the hex flats is n

18、ot controlled. 6. The case temperature may be measured anywhere on the seating plane within .125 inch (3.18 mm) of the stud. 7. Terminal spacing measured at base seat only. 8. All three terminals. 9. Maximum unthreaded dimension. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symb

19、ology. FIGURE 1. Physical dimensions 2N3846 and 2N3847 (TO-63). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/412F 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Methods used for electr

20、ical isolation of the terminals feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3(ceramic). 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration for 2N3846T1 and 2N3847

21、T1 (TO-254AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27

22、 TW .535 .545 13.59 13.84 Term 1 Base Term 2 Collector Term 3 Emitter Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/412F 5 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Methods used for

23、electrical isolation of the terminals feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3(ceramic). 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Dimensions and configuration for 2N3846T3 and

24、2N3847T3 (TO-257AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .410 .430 10.41 10.92 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .500 .750 12.70 19.05 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.63 TL .645 .665 16.38 16.89 TT .035 .045 0.8

25、9 1.14 TW .410 .420 10.41 10.67 Term 1 Base Term 2 Collector Term 3 Emitter Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/412F 6 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be

26、 as specified in MIL-PRF-19500. VCEX- Collector cutoff voltage (dc) with specified circuit between base and emitter. RISO- Resistance between device case and leads. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and in figure 1, fi

27、gure 2 (TO-254AA), and figure 3 (TO-257AA) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance character

28、istics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I, subgroup 2. 3.7 Marking. Marking shall be in accorda

29、nce with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements spe

30、cified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qual

31、ification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the

32、prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/412F 7 * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be i

33、n accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANT

34、XV level (1) 3c Thermal impedance (see 4.3.2). Thermal impedance (see 4.3.2). 9 ICESand hFE3of table I shall be measured and the data recorded. Not applicable 11 ICESand hFE3of table I shall be retested and the data recorded. ICES= 100 percent or 2 A, whichever is greater. hFE3= 20 percent. ICESand

35、hFE3of table I shall be measured and the data recorded. 12 See 4.3.1. See 4.3.1. 13 Subgroups 2 of table I herein; ICESand hFE3of table I shall be retested and the data recorded. ICES= 100 percent or 2 A, whichever is greater. hFE3= 20 percent. Subgroups 2 of table I herein; ICESand hFE3of table I s

36、hall be retested and the data recorded. ICES= 100 percent or 2 A, whichever is greater. hFE3= 20 percent. 17 For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.3), Endpoints: Subgroup 2 of table I herein For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.3), Endpoints: Subgroup 2 of

37、table I herein * (1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. VCB= 10 - 30 V dc, power shall be applied to the device to achieve a junction temperature, TJ= +175C min

38、imum. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). The thermal impedance limit used in screen 3c of 4.3 herein and subgroup 2

39、of table I shall comply with the thermal impedance graph in figures 6 and 7 (less than or equal to the curve value at the same tHtime) and shall be less than the process determined statistical maximum limit as outlined in method 3131. Provided by IHSNot for ResaleNo reproduction or networking permit

40、ted without license from IHS-,-,-MIL-PRF-19500/412F 8 * 4.3.3 Dielectric withstanding voltage. a. Magnitude of test voltage900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltage.All leads to case (bunch connection). d. Method of connectionMecha

41、nical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500 V/second. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is bein

42、g performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of table I, subgroup 1 and 2 inspection only (table E-VIB, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4

43、.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANT

44、X, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B2 2026 For 2N3846 and 2N3847, depth .10 inch (2.54 mm), t = 10 1 second

45、. B4 1037 VCB 20 V dc. B5 1027 VCB 20 V dc, adjust PTand TAto achieve TJ= +175C 12.5C; marking legibility requirements shall not apply; TA= +100C max. 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B1 2026 For 2N3846 and 2N3847, depth .10

46、 inch (2.54 mm), t = 10 1 second. B3 1037 For solder die attach: 2,000 cycles, VCB 20 V dc. B3 1026 For eutectic die attach: VCB 20 V dc, adjust PTor TAto achieve TJ= 175C min., TA +35C. B6 1032 TA= +200C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

47、,-,-MIL-PRF-19500/412F 9 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgr

48、oup Method Condition C2 1056 Test condition B. C2 2036 Test condition A, for 2N3846 and 2N3847, weight = 7 lbs 5 ounces, t = 15 seconds, tubulated leads only; for 2N3846T1, 2N3846T3, 2N3847T1, and 2N3847T3, weight = 4.5 kg, t = 10 seconds. C2 2036 Test condition D2, 2N3846 and 2N3847 only, torque = 30 inch-pounds, t = 30 seconds. C2 2036 Test condition D1, 2N3846 and 2N3847 only, torque = 6 inch-ounces, t = 15 seconds. C5 3131 See 4.3.2, RJC= 1.3C/W for 2N3846, 2N3846T1, 2N3847, and 2N3847T1, RJC= 1.0C/W for 2N3846T3 and 2N3847T3. C6 1037 For solder die attach: 6,000 cy