DLA MIL-PRF-19500 426 G-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON AMPLIFIER TYPE 2N4957 AND 2N4957UB JAN JANTX JANTXV JANTXVM JANTXVD JANTXVP JANTXVL JANTXVR JANTXVF JANTXVGF.pdf

1、 MIL-PRF-19500/426G 30 March 2013 SUPERSEDING MIL-PRF-19500/426F 29 June 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER TYPE 2N4957 AND 2N4957UB, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, J

2、ANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The re

3、quirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device

4、type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA) level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA requiremen

5、ts. 1.2 Physical dimensions. See figure 1 (TO-72) and figure 2 (surface mount) and figure 3 (JANHC and JANKC die). 1.3 Maximum ratings. PT(1) TA= +25C VCEOVCBOICVEBOTSTGand TJmW V dc V dc mA dc V dc C 200 30 30 30 3.0 -65 to +200 (1) Derate at 1.14 mW/C above TA +25C. AMSC N/A FSC 5961 INCH-POUND *

6、Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the AS

7、SIST Online database at https:/assist.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 30 June 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/426G 2 FIGURE 1

8、. Physical dimensions of transistor type 2N4957 (TO-72). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/426G 3 Symbol Dimensions Notes Inches Millimeters Min Max Min Max CD .178 .195 4.52 4.95 5 CH .170 .210 4.32 5.33 HD .209 .230 5.31

9、 5.84 5 LC .100 TP 2.54 TP LD .016 .021 0.41 0.533 7,8 LL .500 .750 12.70 19.05 7,8 LU .016 .019 0.41 0.48 7,8 L1.050 1 .27 8 L2.250 6.35 8 P .100 2.54 Q .050 1.27 5 r .007 0.18 TL .028 .048 0.71 1.22 TW .036 .046 0.91 1.17 45 TP 45 TP NOTES: 1. Dimension are in inches. 2. Millimeters are given for

10、general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating

11、plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and

12、beyond LL minimum. 8. All four leads. 9. Dimension r (radius) applies to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). FIGURE 1. Physical dimens

13、ions of transistor type 2N4957 (TO-72) Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/426G 4 Dimensions Symbol Inches Millimeters Note Min Max Min Max BH .046 .056 1.17 1.42 BL .115 .128 2.92 3.25 BW .085 .108 2.16 2.74 CL .

14、128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.97 LL2 .017 .035 0.43 0.89 LS1 .036 .040 0.91 1.02 LS2 .071 .079 1.80 2.01 LW .016 .024 0.41 0.61 r .008 .203 r1 .012 .305 r2 .022 .559 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package de

15、note metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, surface mount (2N4957UB version). UB Provided by IHSN

16、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/426G 5 Die size: .016 x .016 inch (0.406 mm x 0.406 mm). Die thickness: .008 .0016 inch (0.2032 mm 0.04064 mm). Base bonding pad: .0023 x .0023 inch (0.058 mm x 0.058 mm). Emitter bonding pad: .0023 x .00

17、23 inch (0.058 mm x 0.058 mm). Back metal: Gold, 6,500 1950 . Top metal: Aluminum, 14,500 3,000 . Back side: Collector. Glassivation: SiO2, 7,500 1,500 . FIGURE 3. JANHC and JANKC (A-version) die dimensions. B E E 0006 Provided by IHSNot for ResaleNo reproduction or networking permitted without lice

18、nse from IHS-,-,-MIL-PRF-19500/426G 6 1.4 Primary electrical characteristics (common to all types). Limits hFE3|hfe| rbCcrbCcCcbGpeNF VCE= 10 V dc IC= 5.0 mA dc IE= 2.0 mA dc, VCE= 10 V dc f = 100 MHz IE= 2.0 mA dc f = 63.6 MHz VCB= 10 V dc (2N4957 only) IE= 2.0 mA dc f = 63.6 MHz VCB= 10 V dc (2N49

19、57UB only) VCB= 10 V dc IE= 0 100 kHz f 1 MHz IC= 2.0 mA dc f = 450 MHz VCE= 10 V dc IC= 2.0 mA dc VCE= 10 V dc f = 450 MHz ps ps pF dB dB Min 30 12 1.0 1.0 17 Max 165 36 8.0 16.0 0.8 25 3.5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or

20、5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all spec

21、ified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified he

22、rein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices

23、. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract,

24、 in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The ind

25、ividual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers

26、 list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-1950

27、0/426G 7 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figures 1 (TO-72), 2 (UB, surface mount), and 3 (JANHC/JANKC die). 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL-S

28、TD-750, MIL-PRF-19500, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Elec

29、trical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be specified in table I. 3.8 Marking. Devices shall be marked in accor

30、dance with MIL-PRF-19500, except for the UB suffix package. Marking on the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The “2N“ prefix and

31、the “UB“ suffix can also be omitted. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uni

32、form in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conf

33、ormance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qua

34、lification was awarded to a prior revision of the specification sheet that did not request the performance of table IV tests, the tests specified in table IV herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification

35、. 4.2.2 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/426G 8 4.3 Screening (JANTX, JANTXV and JANS levels only). Screen

36、ing shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV Measurement of MIL-PRF-19500) JANS level JAN

37、TX and JANTXV levels 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.3) Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.3) 7 Optional Optional 9 ICBO1, hFE3Not applicable 10 24 hours minimum 24 hours minimum 11 ICBO1; hFE3; ICBO1= 100 percent of initial value or10 nA dc, whichever i

38、s greater. hFE3= 20 percent ICBO1,hFE312 See 4.3.1, 240 hours minimum See 4.3.1, 80 hours minimum 13 Subgroups 2 and 3 of table I herein; ICBO1= 100 percent of initial value or 10 nA dc, whichever is greater; hFE3= 20 percent Subgroup 2 of table I herein; ICBO1= 100 percent of initial value or 10 nA

39、 dc, whichever is greater; hFE3= 20 percent 14 Required Required 4.3.1 Power burn-in. Power burn-in conditions are as follows: TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750, VCB= 10 - 20 V dc. A power dissipation of PD= 100 percent of PTmaximum as defined in 1.3 shall

40、 be used. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.3 Thermal impedance (VB

41、Emeasurements). The VBEmeasurements shall be performed in accordancewith method 3131 of MIL-STD-750 using the guidelines in that method for determining VH, VCE, IM, IH, tH, and tMD. The VBElimit used in screen 3c and table I, subgroup 2 shall be set statistically by the supplier over several die lot

42、s and submitted to the qualifying activity for approval. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/426G 9 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alt

43、ernate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accor

44、dance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIa (JANS) of

45、 MIL-PRF-19500 and 4.4.2.1 herein. (See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing). Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 and delta requirements shall be in accordance with table III herein as specified in the footnotes for table III. * 4.4.2.1

46、 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB= 10 V dc, TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750, t(on) = t(off) = 3 minutes, PD= maximum rated PT(see 1.3) during the “on” cycle. PD= 0 during the “off” cycle. * B5

47、 1027 1,000 hours minimum, VCB= 10 V dc, power shall be applied to achieve TJ= +150C minimum using a minimum of PD= 100 percent of maximum rated PTas defined in 1.3; in addition, adjust TAto achieve TJ. n = 45 devices, c = 0. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may

48、 be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Step Method Condition 1 1026 Steady-state life: 1

49、,000 hours minimum, VCB= 10 V dc, power shall be applied to achieve TJ= +150C minimum using a minimum of PD= 100 percent of maximum rated PTas defined in 1.3; in addition, adjust TAto achieve TJ. n = 45 devices, c = 0. 2 1048 Blocking life, TA = +150C, VCB = 80 percent of rated voltage, 48 hours minimum. n = 45 devices,