DLA MIL-PRF-19500 427 P-2013 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER TYPES 1N5614 1N5616 1N5618 1N5620 1N5622 1N5614US 1N5616US 1N5618US 1N5620US 1N5622US JAN JANTX JANT.pdf

1、 MIL-PRF-19500/427P 20 June 2013 SUPERSEDING MIL-PRF-19500/427N 9 April 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JAN

2、KC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements

3、for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (axial lead), figure

4、2 (surface mount), and figure 3 (JANHC and JANKC). 1.3 Maximum ratings. Unless otherwise specified TA= 25C. 1.3.1 Ratings applicable to all Part or Identifying Numbers (PIN). TSTG= TJ(max)= -65C to +175C. 1.3.2 Ratings applicable to individual types. Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col. 6 Col. 7

5、Col. 8 Col. 9 Types (1) IO1TA= +55C (2) IO2TA= +100C (3) VRWMIFSMTA= +55C IF = 750 mA tp= 8.3 ms trrRJL at L = .375 inch (9.53 mm) (4) RJEC (4) RJX (4) 1N5614, US 1N5616, US 1N5618, US 1N5620, US 1N5622, US A 1 1 1 1 1 mA 750 750 750 750 750 V 200 400 600 800 1,000 A 30 30 30 30 30 s 2 2 2 2 2 C/W 3

6、6 36 36 36 36 C/W 13 13 13 13 13 C/W 133 133 133 133 133 See notes on next page. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Si

7、nce contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 September 2013. Provided b

8、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/427P 2 1.3.2 Maximum ratings - Continued. (1) Barometric pressure reduced: 1N5615, and 1N5618 = 8 mm Hg, 1N5620 and 1N5622 = 33 mm Hg. (2) From 1 A at TA= +55C, to 0.75 A at TA= +100C, derate linearly

9、 at 5.56 mA/C. (3) From 0.75 A at TA= +100C, to 0 A at TA= +175C, derate linearly at 10 mA/C. (4) For the 1 A rating at 55C ambient and the 750 mA rating at 100C ambient, these IOratings are for a thermally (PC boards or other) mounting methods where the lead or end-cap temperatures cannot be mainta

10、ined, and where thermal resistance from mounting point to ambient is still sufficiently controlled where TJ(MAX) in 1.3.1 is not exceeded. This equates to RJX 133C/W in col. 9. Also see application notes in 6.5.1. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specifie

11、d in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that

12、they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to

13、the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods fo

14、r Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or

15、 in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot

16、for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/427P 3 Dimensions Symbol Inches Millimeters Notes Min Max Min Max BD .065 .110 1.65 2.79 3 BL .130 .205 3.30 5.21 4 LD .026 .033 0.66 0.84 LL 1.00 1.50 25.4 38.10 NOTES: 1. Dimensions are in inches. 2. Millime

17、ters are given for general information only. 3. Dimension BD shall be measured at the largest diameter. 4. The BL dimension shall include the entire body including slugs and sections of the leads over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge

18、of the diode body and extending .050 inch (1.27 mm) onto the leads. 5. The shape of the body, within the bounds of the dimensions is optional. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for axial leaded devices only. Provided by IHSNot f

19、or ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/427P 4 Dimensions Symbol Inches Millimeters Min Max Min Max BD .091 .103 2.31 2.62 BL .168 .200 4.27 5.08 ECT .019 .028 0.48 0.71 S .003 0.08 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for gen

20、eral information only. 3. Dimensions are pre-solder dip. 4. The S dimension is minimum clearance of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions types 1N5614US, 1N5616US, 1N5618US, 1N5620

21、US, and 1N5622US (surface mount devices). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/427P 5 A - version Dimensions Ltr Inches Millimeters Min Max Min Max A .047 .053 1.19 1.35 B .007 .011 0.18 0.28 C .033 .037 0.84 0.94 NOTES: 1. Dim

22、ensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics of the die are: Top metal: Gold 10,000 minimum. Back metal: Gold 4,000 minimum. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dimension, JANH

23、CA and JANKCA die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/427P 6 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished un

24、der this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and de

25、finitions used herein shall be as specified in MIL-PRF-19500 and as follows. EC End-cap. US Short-body unleaded or surface mounted diodes (square end-caps). 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1, 2, and 3

26、 herein. 3.4.1 Lead finish. Unless otherwise specified, lead or end cap finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish, the maximum lead temperature is limited to 175C maximum. Where a choice of finish is desired, it shall b

27、e specified in the acquisition document (see 6.2). 3.4.2 Diode construction. These devices shall be metallurgically bonded-thermally-matched-noncavity-double plug construction, utilizing a category I bond, in accordance with MIL-PRF-19500, except for JANHC and JANKC. US version devices shall be stru

28、cturally identical to the nonsurface mount version devices except for lead termination. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5.1 Marking of US version devices. For US version devices only, all marking (except as stated in 3.6) may be omitted from the body, but shall be r

29、etained on the initial container. 3.6 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end. Alternatively, for US suffix devices, a minimum of three contrasting color dots spaced around the periphery on the cathode end or a contrasting color

30、band may be used. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and table I herein. 3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I, here

31、in. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are cl

32、assified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/427P 7 4.2 Qualification inspection. Qualification inspection shall b

33、e in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II

34、 tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC and JANKC die. Qualification shall be in accordance with appendix G of MIL-PRF-19500 and as specified he

35、rein. * 4.3 Screening (JANTX, JANTXV and JANS levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not b

36、e acceptable. Screening (see appendix E, table E-IV of MIL-PRF-19500) JANS level JANTXV and JANTX level 3a (1) 3c Required Thermal impedance (see 4.3.1) Required Thermal impedance (see 4.3.1) 9 IR1and VF2Not required 10 Method 1038 of MIL-STD-750, condition A Method 1038 of MIL-STD-750, condition A

37、(2) 11 IR1and VF2, IR1 100 percent of initial reading or 100 nA dc, whichever is greater. VF2 0.1 V dc IR1and VF212 Required, see 4.3.2 Required, see 4.3.2 (2) (3) 13 Subgroups 2 and 3 of table I herein: IR1 100 percent of initial reading or 100 nA dc, whichever is greater. VF2 0.1 V dc. Scope displ

38、ay evaluation (see 4.5.2) Subgroup 2 of table I herein: IR1 100 percent of initial reading or 100 nA dc, whichever is greater. VF2 0.1 V dc. Scope display evaluation (see 4.5.2) (1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance wi

39、th MIL-PRF-19500, screen 3 prior to this thermal test. * (2) For JANTX and JANTXV devices, VF2may be omitted if thermal impedance is performed, unless irradiation is used to reduce the carrier lifetime. (3) ZJXis not required in screen 13, if already previously performed. Provided by IHSNot for Resa

40、leNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/427P 8 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and K factor where ap

41、propriate. Measurement delay time (tMD) = 70 s max. The limits will be statistically derived. See table II, group E, subgroup 4 herein. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.3, 4.5.3.1). IO(min) = 1 A minimum; TA= 55C maximum. Test conditions in accordance

42、with method 1038 of MIL-STD-750, condition B. Adjust IOor TAto achieve the required TJ. TJ= 135C minimum and 175C maximum. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, mounting conditions) may be used for JANTX and JANTXV qu

43、ality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.3 Screening (JANHC and JANKC). Screening of die shall be in accordance with appendix G of M

44、IL-PRF-19500. As a minimum, die shall be 100-percent probed to ensure compliance with group A, subgroup 2 of MIL-PRF-19500. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance

45、with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. The ZJXend-point shall be derived by the supplier and approved by the qualifying activity. The ZJXend-point shall also be docu

46、mented in the qualification report. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows: Electrical measurements (end-points)

47、shall be in accordance with the applicable inspections in table I, subgroup 2 herein. Delta measurements shall be as specified in table III herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/427P 9 4.4.2.1 Group B inspection appendix

48、 E, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Conditions B3 4066 IFSM= rated IFSM(see col. 5 of 1.3.2); ten surges of 8.3 ms each at 1 minute intervals, superimposed on IO= 1 A, VRWM= rated (see col. 4 of 1.3.2) TA= +55C. B4 1037 IO= 1 A minimum for applicable mounting and required delta temperature in method 1037 of MIL-STD-750; VR= VRWM(see 1.3) 2,000 cycles. B5 1027 IO= 1 A minimum; apply VR= rated VRWM(see col. 4 of 1.3.2, 4.5.3 and 4.5.3.1) adjust IOto achieve TJminimum; f = 50-60 Hz; n = 45, c = 0. TA= + 55C max.; TJ= 175C minimum; t = 1,000 hours. B8 4065 Pe