DLA MIL-PRF-19500 444 M-2011 SEMICONDUCTOR DEVICE DIODE SILICON SWITCHING SCHOTTKY TYPES 1N5711-1 1N5711UR-1 1N5711UB 1N5711UBCA 1N5711UBD 1N5711UBCC 1N5712-1 1N5712UR-1 1N5712UB 1-.pdf

1、MIL-PRF-19500/444M 19 December 2011 SUPERSEDING MIL-PRF-19500/444L w/AMENDMENT 2 25 January 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, SCHOTTKY, TYPES 1N5711-1, 1N5711UR-1, 1N5711UB, 1N5711UBCA, 1N5711UBD, 1N5711UBCC, 1N5712-1, 1N5712UR-1, 1N5712UB, 1N5712U

2、BCA, 1N5712UBD, 1N5712UBCC, 1N6857-1, 1N6857UR-1, 1N6858-1, AND 1N6858UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of thi

3、s specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided

4、 for each unencapsulated device type. 1.2 Physical dimensions. See figure 1, DO-35, figure 2, DO-213AA, figure 3 (UB), and figure 4. 1.3 Maximum ratings. Unless otherwise specified TA= +25C. Type VRWMIO1IO2 (1) TSTGand TJRJLL = .375 inch (9.52 mm) (2) RJEC(UR) RJSP(UB) ESDS class 1N5711-1 1N5711UR-1

5、 1N5711UB 1N5711UBCA 1N5711UBCC 1N5711UBD 1N6858-1 1N6858UR-1 1N5712-1 1N5712UR-1 1N5712UB 1N5712UBCA 1N5712UBCC 1N5712UBD 1N6857-1 1N6857UR-1 V(pk) 50 50 50 50 50 50 50 50 16 16 16 16 16 16 16 16 mA dc 33 (3) 33 (4) 33 (4) 33 (4) 33 (4) 33 (4) 75 (5) 75 (6) 75 (5) 75 (6) 75 (6) 75 (6) 75 (6) 75 (6)

6、 150 (7) 150 (8) mA dc 5 5 5 5 5 5 10 10 20 20 20 20 20 20 50 50 -65C to +150C (leaded) 250 250 250 250 (UR) 100 100 100 100 (UB) 100 100 100 100 100 100 100 100 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 See notes on next page. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this documen

7、t should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil

8、 . The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 March 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/444M 2 1.3 Maximum ratings Continued. (1) Maximum IOrating

9、to ensure CLcompliance ( 100 ps). (2) Lead length = .375 inch (9.52 mm). (3) At TL= +130C and L = .375 inch, derate IOto 0 at +150C. (4) At TECand TSP= +140C, derate IOto 0 at +150C. (5) At TL= +110C and L = .375 inch, derate IOto 0 at +150C. (6) At TECand TSP= +130C, derate IOto 0 at +150C. (7) At

10、TL= +70C and L = .375 inch, derate IOto 0 at +150C. (8) At TECand TSP= +110C, derate IOto 0 at +150C. 1.4 Primary electrical characteristics. Type (1) V(BR)1IR= 10 A dc (min) VF1IF= 1 mA dc (max) VF2IF= 15 mA dc (max) IR1VR= 50 V dc (max) C VR= 0, f = 1 MHz Vsig= 50 m V(pk) (max) CL(max) ZJX(max) 1N

11、5711-1 1N6858-1 V dc 70 70 V dc 0.410 0.360 V dc 1.0 0.65 nA dc 200 200 pF 2.0 4.5 ps 100 100 mA 5 10 C/W 40 40 Type (1) V(BR)1IR= 10 A dc (min) VF1IF= 1 mA dc (max) VF2IF= 35 mA dc (max) IR1VR= 16 V dc (max) C VR= 0, f = 1 MHz Vsig= 50 mv(pk) (max) CL(max) ZJX(max) 1N5712-1 1N6857-1 V dc 20 20 V dc

12、 0.410 0.350 V dc 1.0 0.75 nA dc 150 150 pF 2.0 4.5 ps 100 100 mA 20 50 C/W 40 40 (1) Electrical characteristics are for all package styles. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/444M 3 Symbol Dimensions Notes Inches Millimete

13、rs Min Max Min Max BD .068 .076 1.73 1.93 2, 3 BL .125 .170 3.18 4.32 2 LD .014 .022 0.36 0.56 LL 1.000 1.500 25.40 38.10 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Dimensions BL and LD include all components of the diode periphery except the sections

14、of the leads over which the diameter is controlled. 3. Dimension BD shall be measured at the largest diameter. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 FIGURE 1. Physical dimensions, (DO-35). DO-35 LL LL Provided by IHSNot

15、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/444M 4 Symbol Dimensions Inches Millimeters Min Max Min Max BD .063 .067 1.60 1.70 BL .130 .146 3.30 3.71 ECT .016 .022 0.41 0.55 S .001 Min 0.03 Min NOTES: 1. Dimensions are in inches. Millimeters are give

16、n for general information only. 2. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 FIGURE 2. Physical dimensions, (DO-213AA). DO-213AA Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

17、 IHS-,-,-MIL-PRF-19500/444M 5 Symbol Dimensions Symbol Dimensions Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS1.035 .040 0.89 1.02 BL .115 .128 2.92 3.25 LS2.071 .079 1.81 2.01 BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61 CL .128 3.25 r .008 0.20 C

18、W .108 2.74 r1 .012 0.31 LL1 .022 .038 0.56 0.96 r2 .022 0.56 LL2 .017 .035 0.43 0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Pad 4 = Shielding connected to the lid. 5. In accordance with ASME

19、Y14.5M, diameters are equivalent to x symbology. * FIGURE 3. Physical dimensions, surface mount (UB version). 1N5711UBCA 1N5712UBCA 1N5711UB 1N5712UB 1N5711UBCC 1N5712UBCC 1N5711UBD 1N5712UBD 2 1 UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL

20、-PRF-19500/444M 6 Ltr Inches Millimeters Min Max Min Max A .004 .005 0.102 0.127 B .0130 .0170 0.330 0.432 Ltr Inches Millimeters Min Max Min Max A .0029 .0035 0.074 0.089 B .0130 .0170 0.330 0.432 Ltr Inches Millimeters Min Max Min Max A .0055 .0065 0.140 0.165 B .0130 .0170 0.330 0.432 NOTES: 1. D

21、imensions are in inches. Millimeters are given for general information only. 2. Element evaluation accomplished utilizing TO-5 package. 3. The physical characteristics of the die are: Metallization: Top (anode): Al. Back (cathode): Au. Al thickness: 25,000 minimum. Gold thickness: 4,000 minimum. Chi

22、p thickness: .010 inch (0.25 mm) .002 inch (0.05 mm). 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 4. Physical dimensions, die. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/444M 7 2. APPLICABLE D

23、OCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to e

24、nsure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following sp

25、ecifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specifica

26、tion for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, P

27、hiladelphia, PA 19111-5094.) 2.2.2 Other Government documents, drawings, and publications. The following other Government documents, drawings, and publications form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in th

28、e solicitation or contract. DRAWING DEFENSE ELECTRONICS SUPPLY CENTER (DESC) C68001 - Test Fixture for Effective Minority Carrier Lifetime. (Copies of DESC Drawing C68001 are available from Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail Semiconducto

29、rdla.mil .) 2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulatio

30、ns unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer autho

31、rized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/444M 8 3.3 Abbreviations, symbols, and definition

32、s. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. EC End-cap. CLEffective carrier lifetime. UR Surface mount case outline, round end-cap. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-

33、PRF-19500 and figures 1, 2, 3, and 4 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. All devices (exc

34、ept UB version) shall be metallurgically bonded, double plug construction in accordance with the requirements of MIL-PRF-19500. All glass diodes shall be designed with sufficient thermal compensation in the axial direction to optimize tensile and compressive stresses. Dimensional analysis is require

35、d of all materials used to achieve axial thermal compensation. Dimensional tolerances and corresponding coefficient of thermal expansion (CTE) shall be documented on the DSCC Design and Construction Form 36D and shall be approved by the qualifying activity to maintain qualification. Dimensional tole

36、rances shall be sufficiently tight enough to prevent excessive stresses due to the inherent CTE mismatch. The UB devices shall be eutectically mounted and wire bonded in a ceramic package. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance chara

37、cteristics are as specified in 1.3, 1.4 and table I. 3.6 Electrical test requirements. The electrical test requirements shall be table I as specified herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. Manufacturers identification and date code shall be marked on the devices. Ini

38、tial container package marking shall be in accordance with MIL-PRF-19500. The polarity shall be indicated with a contrasting color band to denote the cathode end. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, or JS, respectively. The part number may be reduced to J5711,

39、JX5711, JV5711, or JS5711. No color coding shall be permitted for part numbering. 3.7.1 Polarity. The polarity of axial leaded devices shall be indicated with a contrasting color band to denote the cathode end. No color coding will be permitted for the part number. 3.7.1.1 UB devices. UB devices do

40、not require polarity marking. 3.7.2 UR devices. For UR version devices only, all marking, except polarity may be omitted from the body, but shall be retained on the initial container. Polarity marking of UR devices shall consist, as a minimum, a band or three contrasting dots spaced equally around t

41、he periphery of the cathode. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirement

42、s specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/444M 9 4.1.1 Sampling inspection. Sampling

43、 inspection shall be in accordance with MIL-PRF-19500. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qual

44、ification was awarded to a prior revision of the specification sheet that did not require the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification.

45、 4.2.2 JANHC and JANKC devices. Qualification shall be in accordance with MIL-PRF-19500. 4.3 Screening. Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limit

46、s of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS JANTXV and JANTX level 1a Required Not required 1b Required Required (JANTXV only) 2 Not required Not required 3a 3b (1) 3c Required Not applicable Required (see 4.3.3) Required Not applicable Requ

47、ired (see 4.3.3) 4 Required for UB Not applicable 5 Required for UB Not applicable 6 Not applicable Not applicable 8 Required Not required 9 and 10 Not applicable Not applicable 11 Required IR1and VF1Required IR1and VF112 Required, see 4.3.1 Required. See 4.3.1, t = 48 hours (2) 13 Required. Subgrou

48、p 2 and 3 of table I herein; IR1 100 percent of initial reading or 25 nA whichever is greater; VF1 20 mV dc. Subgroup 2 of table I herein; IR1 100 percent of initial reading or 50 nA whichever is greater; VF1 40 mV dc. (1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with table E-IV of MIL-PRF-19500, JANTX and JANTXV levels do not need to be repeated in screening requirements. (2) Test within 24 hours after removal from test. 4.3.1 Burn-in conditions. Burn-in conditions are as follows: High temperature reverse bias (HTR