DLA MIL-PRF-19500 454 J-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N5660 2N5660U3 2N5661 2N5661U3 2N5662 AND 2N5663 JAN JANTX AND JANTXV.pdf

1、 MIL-PRF-19500/454J 12 October 2012 SUPERSEDING MIL-PRF-19500/454H 20 October 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662, AND 2N5663, JAN, JANTX, AND JANTXV This specification is approved for use by all

2、Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels

3、 of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. For types 2N5660 and 2N5661, see figure 1 (similar to TO-66). For types 2N5662 and 2N5663, see figure 2 (similar to TO-5). For types 2N5660U3, and 2N5661U3, see figure 3 (U3). 1.3 Maximum

4、ratings. TC= +25C, unless otherwise specified. Type PT TA= +25C PTTC= +100C RJA(1) (2) RJC(1) (2) VCBOVCEO VEBO IBICVCERTJand TSTGW W C/W C/W V dc V dc V dc A dc A dc V dc C 2N5660 2.0 20 87.5 5 250 200 6.0 0.5 2.0 250 -65 to +200 2N5661 2.0 20 87.5 5 400 300 6.0 0.5 2.0 400 -65 to +200 2N5662 1.0 1

5、5 175 6.7 250 200 6.0 0.5 2.0 250 -65 to +200 2N5663 1.0 15 175 6.7 400 300 6.0 0.5 2.0 400 -65 to +200 2N5660U3 20 4.5 250 200 6.0 0.5 2.0 250 -65 to +200 2N5661U3 20 4 400 300 6.0 0.5 2.0 400 -65 to +200 (1) For derating, see figures 4 through 8. (2) For thermal curves, see figures 9 through 16. A

6、MSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this ad

7、dress information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 January 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

8、,-,-MIL-PRF-19500/454J 2 1.4 Primary electrical characteristics. Limits hFE2 (1) IC= 0.5 A dc VCE= 5 V dc |hfe| IC= 0.1 A dc VCE= 5 V dc f = 10 MHz VBE(sat) (1) IC= 1.0 A dc IB= 0.1 A dc VCE(sat) (1) IC= 1 A dc IB= 0.1 A dc Pulse response tonIC= 0.5 A dc toffIC= 0.5 A dc 2N5660, 2N5660U3, 2N5662 2N5

9、661, 2N5661U3, 2N5663 2N5660, 2N5660U3, 2N5662 2N5661, 2N5661U3, 2N5663 Min Max 40 120 25 75 2 7 V dc 1.2 V dc 0.4 s 0.25 s 0.85 s 1.2 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This se

10、ction does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cit

11、ed in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the

12、 issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are av

13、ailable online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between

14、 the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted wi

15、thout license from IHS-,-,-MIL-PRF-19500/454J 3 FIGURE 1. Physical dimensions, 2N5660 and 2N5661, (similar to TO-66). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/454J 4 Ltr Dimensions Notes Inches Millimeters Min Max Min Max CD .470

16、 .500 11.94 12.70 7 CH .250 .340 6.35 8.64 HR .350 8.89 HR1.115 .145 2.92 3.68 4 HT .050 .075 1.27 1.91 LD .028 .034 0.71 0.86 4, 6 LL .360 .500 9.14 12.70 4 L1.050 1.27 4,6 MHD .142 .152 3.61 3.86 4 MHS .958 .962 24.33 24.43 PS .190 .210 4.83 5.33 3 PS1.093 .107 2.36 2.72 3 s .570 .590 14.48 14.99

17、3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should be measured at points .050 inch (1.27 mm) +.005 inch (0.13 mm) -.000 inch (0.00 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. T

18、wo places. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Lead diameter s

19、hall not exceed twice LD within L1. 7. Body contour is optional within zone defined by CD. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 9. Lead 1 is emitter, lead 2 is base, and case is collector. FIGURE 1. Physical dimensions, 2N5660 and 2N5661, (similar to TO-66) Con

20、tinued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/454J 5 FIGURE 2. Physical dimensions, 2N5662 and 2N5663, (similar to TO-5). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PR

21、F-19500/454J 6 Ltr Dimensions Notes Inches Millimeters Min Max Min Max CD .305 .355 7.75 9.02 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 6 LD .016 .021 0.41 0.53 7 LL 1.500 1.750 38.10 44.45 7 LU .016 .019 0.407 0.482 7 L1 .050 1.27 7 L2 .250 6.35 7 TL .029 .045 0.74 1.14 3 TW

22、.028 .034 0.712 0.863 9 P .100 2.54 Q .050 1.27 4 r .010 0.25 10 45TP 45TP 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Symbol CD shall not vary more than .01

23、0 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) - .000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct methods or by gaug

24、e. 7. Symbol LU applies between L1and L2. Dimension LD applies between L2and LL minimum. 8. Lead number three is electrically connected to case. 9. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). * 10. Symbol r is applied to both inside corners of tab. 11. In accordan

25、ce with ASME Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. FIGURE 2. Physical dimensions, 2N5662 and 2N5663, (similar to TO-5) Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

26、-,-MIL-PRF-19500/454J 7 Symbol Dimensions Inches Millimeters Min Max Min Max BL .395 .405 10.04 10.28 BW .291 .301 7.40 7.64 CH .1085 .1205 2.76 3.06 LH .010 .020 0.25 0.51 LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.93 3.17 LS1 .150 BSC 3.81 BSC LS2 .075

27、BSC 1.91 BSC Q1 .030 0.762 Q2 .030 0.762 TERM 1 Collector TERM 2 Base TERM 3 Emitter FIGURE 3. Physical dimensions, 2N5660U3 and 2N5661U3 (U3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/454J 8 3. REQUIREMENTS 3.1 General. The indi

28、vidual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers

29、list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 a

30、nd figure 1 (similar to TO-66), figure 2 (similar to TO-5), and figure 3 (U3) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of finish is desired, it shall be specified in the contract or order (see 6.2). 3.5 Marki

31、ng. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements sha

32、ll be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The in

33、spection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified herein.

34、 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were no

35、t performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/454J 9 4.3 Screening (JANTX and JANTXV levels). Screening shall

36、 be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANTX and JANTXV leve

37、ls (1) 3c Thermal impedance (see 4.3.2) 9 ICES110 48 hours minimum 11 ICES1and hFE2; ICES1= 100 percent of initial value or 20 nA, dc whichever is greater. 12 See 4.3.1 13 Subgroup 2 of table I herein; ICES1= 100 percent of initial value or 20 nA dc; hFE2= 25 percent of initial value. (1) Shall be p

38、erformed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc, TA= room ambient as defined in 4.5 of MIL-STD-750. Power shall be applied to the device to ac

39、hieve the required junction temperature, TJ= +135C minimum and a minimum power dissipation = 75 percent of max PTas defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX

40、and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in

41、accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with M

42、IL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. 4.4.2 Group B inspec

43、tion. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIC of MIL-PRF-19500, and as specified below. Electrical measurements (end-points) and delta requirements JAN, JANTX, and JANTXV shall be after each step in 4.4.2.1 and shall be in

44、 accordance with table I, subgroup 2, and table III herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/454J 10 4.4.2.1 Group B inspection, table E-VIC (small die flow, JAN, JANTX, and JANTXV). Separate samples may be used for each

45、step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Step Method Condition 1 1026 VCB= 10 V dc 2 1048 HTRB: Test conditi

46、on A, 48 hours minimum. 3 1032 High-temperature life (non-operating), t = 340 hours, TA= +200C. 4.4.2.2 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of

47、three wafers (or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500. b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature

48、, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follow

49、s. Electrical measurements (end-points) shall be in accordance with the applicable of table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable steps of table III herein. Subgroup Method Condition C2 2036 Test condition A (tension) for 2N5660 and 2N5661; weight = 3 pound