DLA MIL-PRF-19500 461 F-2008 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON HIGH-POWER TYPE 2N6211 2N6212 2N6213 2N6213A JAN JANTX JANTXV JANS JANHC AND JANKC.pdf

1、 MIL-PRF-19500/461F 30 May 2008 SUPERSEDING MIL-PRF-19500/461E 18 April 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER, TYPE 2N6211, 2N6212, 2N6213, 2N6213A, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all De

2、partments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, high-voltage. Four levels of pro

3、duct assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (TO-66), and figure 2, JANHC and JANKC (die) dimensions. 1.3 Maximum ratings. Unless otherwise speci

4、fied, TC= +25C. Type PT(1) TA= +25C PT(2) TC= +25C VCBOVCEO VEBO IBIC TJand TSTGRJC (max) ZJX W W V dc V dc V dc A dc A dc C C/W C/W 2N6211 3.0 35 275 225 6.0 1.0 2.0 -65 to +200 5.0 1.75 2N6212 3.0 35 350 300 6.0 1.0 2.0 -65 to +200 5.0 1.75 2N6213 3.0 35 400 350 6.0 1.0 2.0 -65 to +200 5.0 1.75 2N

5、6213A 3.0 35 500 450 6.0 1.0 2.0 -65 to +200 5.0 1.75 (1) Derate linearly at 17.1 mW/C for TA +25C. (2) Derate linearly at 200 mW/C for TC +25C. 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. hFE1(1) VCE(SAT)(1) Cobo|hfe| Pulse response Limit VCE= 5 V dc IC= 1.0 A dc I

6、B= -0.125 A dc 100 kHz f 1 MHzVCB= 10 V dc f = 5 MHz IC= 0.2 A dc VCE= 10 V dc tontoffIC= 1 A dc 2N6211 2N6212 2N6213 2N6213A IE= 0 2N6211 2N6212 2N6213 2N6213A Minimum 30 V dc V dc V dc pF 4 1.5 s s Maximum 175 1.4 1.6 2.0 220 20 10 0.6 3.1 (1) Pulsed (see 4.5.1). AMSC N/A FSC 5961 INCH-POUND * Com

7、ments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address informa

8、tion using the ASSIST Online database at http:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 August 2008 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF

9、-19500/461F 2 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While

10、every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards

11、, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semic

12、onductor Devices, General Specification for. * DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order De

13、sk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this docu

14、ment, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be

15、 products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.4). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be

16、as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (T0-66 ) and 2 (die) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. W

17、here a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as speci

18、fied in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be table I as specified herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, s

19、erviceability, or appearance.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/461F 3 Dimensions Ltr Inches Millimeters NotesMin Max Min Max CH .250 .340 6.35 8.64 LD .028 .034 0.71 0.86 7,9 CD .470 .500 11.94 12.70 2 PS .190 .210 4.83 5.

20、33 3 PS1 .093 .107 2.36 2.72 3 HT .050 .075 1.27 1.91 2, 5 LL .360 .500 9.14 12.70 7 L1.050 1.27 4 MHD .142 .152 3.61 3.86 MHS .958 .962 24.33 24.43 HR .350 8.89 HR1 .115 .145 2.92 3.68 S .570 .590 14.48 14.99 3 NOTES: * 1. Dimensions are in inches. Millimeters are given for general information only

21、. 2. Body contour is optional within zone defined by CD. 3. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement shall be made at seating plane. 4. Within this zone the lead diameter may vary to allow for lea

22、d finishes and irregularities. 5. HT dimension does not include sealing flanges. 6. The seating plane of header shall be flat within .001 inch (0.025 mm), concave to .004 inch (0.101 mm), convex inside a .520 inch (13.20 mm) diameter circle on the center of the header, and flat within .001 inch (0.0

23、25 mm), concave to .006 inch (0.152 mm), convex overall. 7. Both terminals. 8. The collector shall be electrically connected to the case. * 9. LD applies between L1and LL. Lead diameter shall not exceed twice LD within L1. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.

24、* FIGURE 1. Physical dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/461F 4 Dimensions Ltr Inches Millimeters NotesMin Max Min Max A .119 .125 3.02 3.18 B .119 .125 3.02 3.18 NOTES: 1. Dimensions are in inches. * 2. Millimet

25、ers are given for general information only. 3. The physical characteristics of the die are: Thickness: .006 inch (0.15 mm) to .012 inch (0.30 mm). Top metal: Aluminum 50,000 nominal, 37,500 minimum. Back metal: Gold 3,000 nominal. Back side: Collector. Bonding pad: B = .015 inch (0.38 mm) x .072 inc

26、h (1.83 mm). E = .015 inch (0.38 mm) x .060 inch (1.52 mm). 4. Junctions passivated with thermal silicon dioxide. * FIGURE 2. JANHC and JANKC (A-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/461F 5 4. VERIFICA

27、TION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-P

28、RF-19500 and table II herein. * 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. * 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded

29、to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed by the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANS,

30、JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Mea

31、surement of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3) 9 hFE1and ICEX 11 hFE1and ICEX; ICEX= 100 percent of initial value or 5 A dc, whichever is greater. hFE1= 15 percent. hFE1and ICEX12 Burn-in (see 4.3.1) Burn-in (see 4.3.1

32、) 13 Subgroups 2 and 3 of table I herein; ICEX= 100 percent of initial value or 5 A dc, whichever is greater. hFE1= 15 percent Subgroup 2 of table I herein; ICEX= 100 percent of initial value or 0.1 mA dc, whichever is greater. hFE1= 25 percent. (1) Shall be performed anytime after temperature cycli

33、ng, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1039 of MIL-STD-750, test condition B. TA= room ambient as defined in the general requirements in 4.5 of MIL-STD-750; VCB 20 V dc, PT= 3.0 W. NOT

34、E: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 JANHC and JANKC screening. Screening of die shall be in accordance with MIL-PRF-19500. Test limits and conditions shall be chosen by the supplier to demonstrate compliance with electrical characteristics specified by spec

35、ification. Probe test shall be performed 100 percent by the supplier on the entire die lot. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/461F 6 * 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accor

36、dance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-

37、PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B in

38、spection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. 4.4.2.1 Group

39、B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Conditions B4 1037 VCB 10 V dc, forced air cooling on the devices shall be permitted only during the tofftime. B5 1027 VCE 10 V dc, TA +125C, adjust TAand power to achieve a TJ +275C, t = 96 hours. PT= 3 W minimum. 4.4.2.2 Group B in

40、spection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B3 1037 VCB 10 V dc, forced air cooling on the devices shall be permitted only during the tofftime. * B5 Not applicable. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with th

41、e conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. Subgroup Method Conditions C2 2036 Test condition A, weight = 10 pounds, t = 15 seconds. * C5 3131 Thermal impe

42、dance, see 4.3.3, RJC(max)= 5C/W. C6 1037 VCB 10 V dc, forced air cooling on the devices shall be permitted only during the tofftime. 4.4.4. Group E Inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and a

43、s specified herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as sp

44、ecified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/461F 7 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 1 Visual and mechanical examinatio

45、n 2071 n = 45 devices, c = 0 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.3 ZJXC/W Collector to emitter breakdown voltage 3011 Bias condition D, IC= 200 mA dc, pulsed (see 4.5.1), (or L = 10 mH, f = 30-60 Hz) V(BR)CEO2N6211 225 V dc 2N6212 300 V dc 2N6213 350 V dc 2N6213A 450 V dcCollector to emitte

46、r breakdown voltage 3011 Bias condition D, IC= 200 mA dc, pulsed (see 4.5.1), (or L = 10 mH, f = 30-60 Hz) RBE= 50 V(BR)CER2N6211 250 V dc 2N6212 325 V dc 2N6213 375 V dc 2N6213A 475 dcCollector to emitter breakdown voltage 3011 Bias condition D, IC= 200 mA dc, pulsed (see 4.5.1), (or L = 10 mH, f =

47、 30-60 Hz) RBE= 50 , VBE= 1.5 V dc V(BR)CEX2N6211 275 V dc 2N6212 350 V dc 2N6213 400 V dc 2N6213A 500 V dcCollector to emitter cutoff current 3041 Bias condition C; VCE= 150 V dc ICEO5.0 mA dcCollector to emitter cutoff current 3041 Bias condition C; VBE= 1.5 V dc ICEX10.5 mA dc2N6211 VCE= 250 V dc

48、 2N6212 VCE= 315 V dc 2N6213 VCE= 360 V dc 2N6213A VCE= 400 V dc See footnote at end of table. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/461F 8 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Limit Unit Meth

49、od Conditions Symbol Min Max Subgroup 2 - Continued. Emitter to base cutoff current 3061 Bias condition D; VEB= 6 V dc IEBO0.5 mA dcCollector to base cutoff current 3036 Bias condition D ICBO15 mA dc2N6211 VCB= 275 V dc 2N6212 VCB= 350 V dc 2N6213 VCB= 400 V dc 2N6213A VCB= 500 V dc Forward-current transfer ratio 30