DLA MIL-PRF-19500 463 J-2012 SEMICONDUCTOR DEVICE DIODE SILICON CURRENT REGULATOR TYPES 1N5283-1 THROUGH 1N5314-1 AND 1N5283UR-1 THROUGH 1N5314UR-1 1N7048-1 THROUGH 1N7055-1 1N7048N.pdf

1、 MIL-PRF-19500/463J 12 September 2012 SUPERSEDING MIL-PRF-19500/463H w/AMENDMENT 1 16 February 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR, TYPES 1N5283-1 THROUGH 1N5314-1, AND 1N5283UR-1 THROUGH 1N5314UR-1, 1N7048-1 THROUGH 1N7055-1, 1N7048UR-1 THROU

2、GH 1N7055UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope.

3、This specification covers the performance requirements for 100 volt, silicon, current regulator diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2

4、 Physical dimensions. See figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JANKC). 1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.10) and as follows: a. PT= 500 mW (DO-7) at TL= +50C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink

5、 at L = .375 inch (9.53 mm). (Derate to 0 at +175C). b. PT= 500 mW (DO-213AB) at TEC= +125C. (Derate to 0 at +175C). c. -65C TJ +175C; -65C TSTG +175C. * 1.4 Primary electrical characteristics. Primary electrical ratings are as shown in maximum test ratings (see 3.10) and as follows, (nominally .22

6、mA dc IS 4.70 mA dc, (symbol “IP” may be used in place of symbol “IS”): a. RJL= 250C/W (maximum) at L = .375 inch (9.53 mm) (DO-7). b. RJC= 100C/W (maximum) junction to end-caps (DO-213AB). AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA

7、 Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process c

8、onversion measures necessary to comply with this revision shall be completed by 12 December 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/463J 2 Symbol Dimensions Inches Millimeters Min Max Min Max BD .060 .107 1.52 2.72 BL .120

9、 .300 3.05 7.62 LD .018 .023 0.46 0.58 LL 1.000 1.500 25.40 38.10 LL10.050 1.27 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The minimum body diameter shall be maintained over .15 inch (3.81 mm) inch of body length. 4. The specified lead diameter appl

10、ies in the zone between .050 inch (1.27 mm) and the end of the lead. Outside of this zone the lead diameter shall not exceed LD. 5. Both leads shall be within the specified dimension. 6. See 3.3 for L and TLdefinitions. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGU

11、RE 1. Physical dimensions (DO-7). DO-7 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/463J 3 Symbol Dimensions Inches Millimeters Min Max Min Max BD .094 .105 2.39 2.67 BL .189 .205 4.80 5.21 ECT .016 .022 0.41 0.55 S .001 min 0.03 min

12、 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions (DO-213AB). DO-213AB Provided by IHSNot for ResaleNo reproduction or networking permitted without lice

13、nse from IHS-,-,-MIL-PRF-19500/463J 4 Symbol Dimensions Inches Millimeters Min Max Min Max A .012 .014 0.305 0.355 B .026 .030 0.660 0.762 Design data Metallization: Top: (Anode) . Al Back: (Cathode) Au Al thickness 25000 Min Gold thickness 4000 Min Chip thickness . .010 .002 inch (0.254 0.0508 mm)

14、NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dimensions, JANHCA and JANKCA die. Provided by IHSNot for ResaleNo reproduction or networking permitted without li

15、cense from IHS-,-,-MIL-PRF-19500/463J 5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional informatio

16、n or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Spe

17、cifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS M

18、IL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Documen

19、t Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in

20、 this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specificatio

21、n shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-

22、,-MIL-PRF-19500/463J 6 * 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions shall be as specified in MIL-PRF-19500 and as follows: IPPinch-off current. IPPinch-off current is defined as the regulator current at specified test voltage, VS. IPRegulator current variati

23、on. IP Temperature coefficient of regulator current. ISPinch-off current. ISPinch-off current is defined as the regulator current at specified test voltage, VS. IS is the preferred symbol however IPcan still be used. ISRegulator current variation. IS Temperature coefficient of regulator current. L L

24、ead thermal path length. Lead thermal path length is the distance from the end of the diode body to the point of lead-temperature measurement. For purposes of this measurement, the same heat sinking at the same distance from the diode body shall be applied to each lead. No heat sinking shall occur b

25、etween the diode body and the point of lead-temperature measurement. This measurement may be made from either end of the diode body. (The diode body includes slugs, if any, but does not include braze fillet, paint, etc., within the zone of uncontrollable lead diameter.) PDSteady-state power dissipat

26、ion. Power dissipated under steady-state conditions. TLLead temperature. Lead temperature is the temperature of the lead measured at the lead thermal path length, L. Lead temperature shall be measured by means of a No. 30 copper-constantan thermocouple, or equivalent. All reference to TLis TECfor “U

27、R“ devices. VPOVPeak operating voltage. Peak operating voltage is the maximum voltage that shall be applied to the device. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JA

28、NKC die) herein. 3.5 Dash-one construction. These devices shall be of double plug construction utilizing high temperature metallurgical bonding between both sides of the silicon die and terminal pins. Metallurgical bond shall be in accordance with the requirements of category I or II in appendix A o

29、f MIL-PRF-19500. 3.5.1 JANS construction. Construction shall be dash-one, category I or II metallurgical bond in accordance with appendix A of MIL-PRF-19500. 3.5.2 Encapsulant material. In addition to those categories of hermetically sealed package requirements specified in MIL-PRF-19500, fused-meta

30、l-oxide to metal shall also be acceptable. 3.6 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.7 Marking. Marking shall be in accordance wi

31、th MIL-PRF-19500. Manufacturers identification and date code shall be marked on the devices. The polarity shall be indicated with a contrasting color band to denote the cathode end. No color coding shall be permitted. Initial container package marking shall be in accordance with MIL-PRF-19500. 3.7.1

32、 Marking of UR devices. UR devices shall be marked with a cathode band as a minimum; or a minimum of three evenly spaced contrasting color dots around the periphery of the cathode end may be used. At the option of the manufacturer, UR devices may include laser marking on an end-cap, to include part

33、number and lot date code for all levels. JANS devices which are laser marked shall also include serialization. The prefixes JAN, JANTX, JANTXV, or JANS may be abbreviated as J, JX, JV, or JS, respectively. (For example: The part number may be reduced to JS5314). All marking which is omitted from the

34、 body of the device shall appear on the initial container. All device marking, except for polarity and serial numbers, shall also appear on the unit package used as the initial protection for delivery. 3.8 Electrical performance characteristics. Unless otherwise specified herein, the electrical perf

35、ormance characteristics are as specified in 1.3, 1.4, and table I and the electrical characteristics table herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/463J 7 3.9 Electrical test requirements. The electrical test requirements

36、 shall be the subgroups specified in table I herein. 3.10 Maximum test ratings. Test ratings shall be as shown in the electrical characteristics table. 3.11 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that wi

37、ll affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection.

38、Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/463J 8 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or r

39、e-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of group E tests, the tests specified in 4.7.4 herein shall be performed on the first inspection lot to this revision to maintain qualification. 4.2.2 JANHC and

40、 JANKC devices. Qualification for shall be in accordance with appendix G of MIL-PRF-19500. * 4.3 Screening (JAN, JANTXV, JANTX, and JANS levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with ta

41、ble I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS JANTX and JANTXV levels JAN level (1) 3a Temperature cycling Temperature cycling Temperature cycling (in accordance with MIL-PRF-19500, JANTX level) (2) 3

42、c Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3) 9 IS1(3) Not applicable Not applicable 10 VPOV= Col 11, table II at TA= +25C t = 48 hours VPOV= Col 11, table II at TA= +25C t = 48 hours VPOV= Col 11, table II at TA= +25C t = 48 hours 11 Subgroup 2 of table

43、 I herein; IS1 5 percent of initial value (4) Subgroup 2 of table I herein Subgroup 2 of table I herein 12 See 4.3.2 See 4.3.2 Not applicable (5) 13 Subgroup 2 of table I herein; IS1 5 percent of initial value. (4) Subgroup 2 of table I herein; IS1 5 percent of initial value. (4) Not applicable (1)

44、Screens 3a, 3c, 10, and 11 are the only screens required for JAN level product. (2) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. * (3) Symbol “IP1” may be used in place of “I

45、S1”. * (4) Symbol “IP1” may be used in place of “IS1”. * (5) When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13. 4.3.1 Screening (JANHC or JANKC). Screening of die shall be in accordance with appendix G of MIL-PRF-19500. As a minimum, die shall be

46、100-percent probed to ensure compliance with table I, subgroup 2 (with the exception of thermal impedance). 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: IR= 200 mA dc minimum; mounting and test conditions in accordance with method 1038 of MIL-STD-750, test condition B, TE

47、C= +75C to +125C for surface mount devices. TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/463J 9 4.3.3 Thermal impedance ZJXmeasurements for screening. The

48、 ZJXmeasurements shall be performed in accordance with method 3101 of MIL-STD-750, (VRto be used in lieu of VF). The maximum limit (not to exceed the table I, subgroup 2 limit) for ZJXin screening (table E-IV of MIL-PRF-19500) shall be derived by each vendor bymeans of statistical process control. W

49、hen the process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable X