DLA MIL-PRF-19500 464 G-2009 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N5685 AND 2N5686 JAN JANTX AND JANTXV.pdf

1、 MIL-PRF-19500/464G 22 May 2009 SUPERSEDING MIL-PRF-19500/464F 27 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N5685 AND 2N5686, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Departmen

2、t of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Three levels of product assurance are provided for eac

3、h device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, similar to TO-3. 1.3 Maximum ratings. TC= +25C, unless otherwise specified. Type PT(1) TC= +25C PT(1) TC= +100C VCBOVCEOVEBOIBICTJand TSTGRJC2N5685 2N5686 W 300 300 W 171 171 V dc 60 80 V dc 60 80 V dc 5 5 A dc 15 15

4、 A dc 50 50 C -55 to +200 -55 to +200 C/W .584 .584 (1) Between TC= +25C and TC= +200C linear derating factor 1.715 W/C. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus,

5、OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with thi

6、s document shall be completed by 22 August 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/464G 2 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. Type hFE2(1) hFE3(1) VBE(sat)(1) VCE(sat)1(1) VCE(sat)

7、2(1) VCE= 2 V dc IC= 25 A dc VCE= 5 V dc IC= 50 A dc IC= 25 A dc IB= 2.5 A dc IC= 25 A dc IB= 2.5 A dc IC= 50 A dc IB= 10 A dc 2N5685 2N5686 Min Max 15 60 15 60 Min Max 5 5 V dc Min Max 2.0 2.0 V dc Min Max 1.0 1.0 V dc Min Max 5.0 5.0 Cobo|hfe| hfeSwitching (see table I and figure 2 herein) Type VC

8、B= 10 V dc IE= 0 0.1 MHz f 1.0 MHz VCE= 10 V dc IC= 5 A dc f = 1 MHz VCE= 5 V dc IC= 10 A dc f = 1 kHz tontoff2N5685 2N5686 Min Max pF 1,200 1,200 Min Max 2 20 2 20 Min Max 15 15 Min Max s 1.5 1.5 Min Max s 3.0 3.0 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in

9、this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document

10、users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

11、part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-

12、STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of pre

13、cedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exempti

14、on has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/464G 3 Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .875 22.22 3 CH .250 .450 6.35 11.43 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 6 HT .060 .135

15、1.52 3.43 LD .057 .063 1.45 1.60 4, 5, 9 LL .312 .500 7.92 12.70 4, 5, 9 L1.050 1.27 5, 9 MHD .151 .165 3.84 4.19 7 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 PS1.205 .225 5.21 5.72 5 S1 .655 .675 16.64 17.15 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general informat

16、ion only. 3. Body contour is optional within zone defined by CD. 4. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement shall be made at seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. Th

17、e collector shall be electrically connected to the case. 9. LD applies between L1and LL. Lead diameter shall not exceed twice LD within L1. 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * 11. Terminal 1 is emitter; terminal 2 is base; case is collector. * FIGURE 1. Phy

18、sical dimensions. TO-3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/464G 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnis

19、hed under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and de

20、finitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein

21、. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as sp

22、ecified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, se

23、rviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection

24、. Qualification inspection shall be in accordance with MIL-PRF-19500. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance

25、 of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PR

26、F-19500/464G 5 * 4.3 Screening (JANTX and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.

27、Screen (see table E-IV Measurement of MIL-PRF-19500) JANTX and JANTXV levels only (1) 3c Thermal impedance (see 4.3.2) 11 hFE2and ICEX112 See 4.3.1 13 Subgroup 2 of table I herein; ICEX1= 100 percent of initial value or 1 A dc, whichever is greater; hFE2= 25 percent of initial value. (1) Shall be pe

28、rformed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ= +187.5C 12.5C; VCB 20 V dc, TA +100C. 4.3.2 Thermal impedance. The thermal impedance measurements shall be pe

29、rformed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, tMDand VHwhere appropriate). See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as speci

30、fied herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, appendix E table E-V, and table I herein. Electrical measurements (end-points) shall be in accordance with the table I, subgroup 2 herein. * 4.4.2 Group B inspection. Group B inspection sha

31、ll be conducted in accordance with the conditions specified for subgroup testing in table E-VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the table I, subgroup 2 herein. Subgroup Method Conditions B3 1037 2,000 cycles, V

32、CE 10 V dc, TJbetween cycles +100C, adjust power or current to achieve a TJ= +100C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/464G 6 * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditio

33、ns specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the table I, subgroup 2 herein. Subgroup Method Conditions C2 2036 Test condition A, weight = 10 pounds, t = 15 s. C5 3131 See 4.3.2, RJC= .584C/W. C6 10

34、37 6,000 cycles, VCE 10 V dc, TJbetween cycles +100C, adjust power or current to achieve a TJ= +100C. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical

35、measurements (end-points) shall be in accordance with the table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-S

36、TD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/464G 7 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal imp

37、edance 2/ 3131 See 4.3.2 ZJXC/W Breakdown voltage collector to emitter 3011 Bias condition D; IC= 100 mA dc, pulsed (see 4.5.1) V(BR)CEO2N5685 60 V dc 2N5686 80 V dc Collector to emitter cutoff current 3041 Bias condition D ICEO500 A dc 2N5685 VCE= 30 V dc 2N5686 VCE= 40 V dc Collector to emitter cu

38、toff current 3041 Bias condition A; VBE= 1.5 V dc ICEX110 A dc 2N5685 VCE= 60 V dc 2N5686 VCE= 80 V dc Emitter to base cutoff current 3061 Bias condition D; VBE= 5 V dc, IC= 0 IEBO1.0 mA dc Collector to base cutoff current 3036 Bias condition D ICBO12.0 mA dc 2N5685 VCE= 60 V dc 2N5686 VCE= 80 V dc

39、Base to emitter saturated 3066 Test condition A; IC= 25 A dc, IB= 2.5 A dc, pulsed (see 4.5.1) VBE(sat)2.0 V dc Base to emitter non-saturated 3066 Test condition B; IC= 25 A dc, VCE= 2 V dc, pulsed (see 4.5.1) VBE2.0 V dc Collector to emitter saturated voltage 3071 IC= 25 A dc; IB= 2.5 A dc pulsed (

40、see 4.5.1) VCE(sat)1 1.0 V dc Collector to emitter saturated voltage 3071 IC= 50 A dc; IB= 10 A dc, pulsed (see 4.5.1) VCE(sat)25.0 V dc Forward current transfer ratio 3076 VCE= 2 V dc; IC= 5 A dc, pulsed (see 4.5.1) hFE130 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction

41、or networking permitted without license from IHS-,-,-MIL-PRF-19500/464G 8 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 2 - Continued Forward current transfer ratio 3076 VCE= 2 V dc; IC= 25 A dc, pulsed (see 4.5.1) hFE215 60

42、 Forward current transfer ratio 3076 VCE= 5 V dc; IC= 50 A dc, pulsed (see 4.5.1) hFE35 Subgroup 3 High temperature operation: TA= +150C Collector to emitter cutoff current 3041 Bias condition A; VBE= 1.5 V dc ICEX25 mA dc 2N5685 VCE= 60 V dc 2N5686 VCE= 80 V dc Low temperature operation: TA= -55C F

43、orward current transfer ratio 3076 VCE= 2.0 V dc; IC= 25 A dc, pulsed (see 4.5.1) hFE47 Subgroup 4 Pulse response 3251 Test condition A, except test circuit and pulse requirements (see figure 2) Turn-on time VCC= 30 V dc; IC= 25 A dc, IB1= 2.5 A dc ton1.5 s Turn-off time VCC= 30 V dc; IC= 25 A dc, I

44、B1= - IB2= 2.5 A dc toff3.0 s Storage time VCC= 30 V dc; IC= 25 A dc, IB1= - IB2= 2.5 A dc ts2.0 s Magnitude of common emitter small-signal short- circuit forward-current transfer ratio 3306 VCE= 10 V dc; IC= 5 A dc, f = 1 MHz |hfe| 2 20 See footnotes at end of table. Provided by IHSNot for ResaleNo

45、 reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/464G 9 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 4 - Continued Small-signal short-circuit forward-current transfer ratio 3206 VCE= 5 V dc;

46、IC= 10 A dc, f = 1 kHz hfe15 Open circuit output capacitance 3236 VCB= 10 V dc; IE= 0, 0.1 MHz f 1 MHz Cobo1,200 pF Subgroup 5 Safe operating area (continuous dc) Test 1 Test 2 Test 3 2N5685 2N5686 Safe operating area (switching) Test 1 Test 2 3051 3053 TC= +25C; t = 1 s, 1 cycle (see figures 3 and

47、4) VCE= 6 V dc; IC= 50 A dc VCE= 30 V dc; IC= 10 A dc VCE= 50 V dc; IC= 560 mA dc VCE= 60 V dc; IC= 640 mA dc Load condition C (unclamped inductive load) (see figure 5) TC= +25C duty cycle 10 percent RS= 0.1 ; tr= tf 500 ns tpapproximately 5 ms (vary to obtain IC); RBB1= 10 ; VBB1= 20 V dc; RBB2= ;

48、VBB2= 0 V; VCC= 50 V dc; IC= 20 A dc; L = 1 mH; Sanford Miller CK - 50, 50 A .002 (or equivalent) tpapproximately 5 ms (vary to obtain IC); RBB1= 100 ; VBB1= 10 V dc; RBB2 = ; VBB2= 0 V; VC= 50 V dc; IC= 1.5 A dc; L = 80 mH; (2 each signal transformer CH06, 6A) 0.4 (or equivalent) See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/464G 10 * TABLE I. Group A inspection - Continued. Inspection 1