DLA MIL-PRF-19500 476 F-2013 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTORS P-CHANNEL SILICON TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB JAN JANTX AND JANTXV.pdf

1、 MIL-PRF-19500/476F 13 December 2013 SUPERSEDING MIL-PRF-19500/476E 23 January 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB, JAN, JANTX, AND JANTXV This specification is approved for

2、 use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for P-channel, junction, silicon fiel

3、d-effect transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-18) and figure 2 (UB, surface mount). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. PT(1) TA= +25C VGS(2) VDSVDG(

4、2) IGTSTGW 0.500 V dc 30 V dc 30 V dc 30 mA dc 50 C -65 to +200 (1) Derate linearly 3.0 mW/C for TA= +25C. (2) Symmetrical geometry allows operation of those units with source/drain leads interchanged. 1.4 Primary electrical characteristics. Limits IDSS(1) VDS(on)VDS= -18 V dc VGS= 0 VDS= -15 V dc V

5、GS= 0 VDS= -15 V dc VGS= 0 ID= -15 mA dc VGS= 0 ID= -7 mA dc VGS= 0 ID= -3 mA dc VGS= 0 2N5114 2N5114UB 2N5115 2N5115UB 2N5116 2N5116UB 2N5114 2N5114UB 2N5115 2N5115UB 2N5116 2N5116UB Min Max mA dc -30 -90 mA dc -15 -60 mA dc -5.0 -25 V dc -1.3 V dc -0.8 V dc -0.6 See notes on next page. AMSC N/A FS

6、C 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address info

7、rmation using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 March 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-

8、19500/476F 2 * 1.4 Primary electrical characteristics - Continued. Limits VGS(off)rds(on)2VDS= 15 V dc ID= -1.0 nA dc VGS= 0, ID= 0 f = 1 kHz 2N5114 2N5114UB 2N5115 2N5115UB 2N5116 2N5116UB 2N5114 2N5114UB 2N5115 2N5115UB 2N5116 2N5116UB Min Max V dc 5 10 V dc 3 6 V dc 1 4 75 100 175 (1) For TA +25C

9、, derate linearly 1.67 mW/C one section, 2.67 mW/C both sections. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended

10、 for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Gover

11、nment documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. MIL-PRF-1950

12、0 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 R

13、obbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, how

14、ever, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/476F 3 Dimensions Symbol Inches Millimeters Note Min Max Min Max CD .178 .195 4.52 4.95 CH .

15、170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.7 19.05 7,8 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.250 6.35 7,8 Q .030 0.76 5 TL .028 .048 0.71 1.22 3,4 TW .036 .046 0.91 1.17 r .010 0.25 10 45 TP 45 TP 6 NOTES: 1. Dimension are in inc

16、hes. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1

17、.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL mi

18、nimum. 8. All three leads. 9. The gate shall be electrically connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 = source, lead 2 = gate, lead 3 = drain. FIGURE 1. Physical dime

19、nsions (similar to TO-18). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/476F 4 Dimensions Symbol Inches Millimeters Note Min Max Min Max BH .046 .056 1.17 1.42 BL .115 .128 2.92 3.25 BW .085 .108 2.16 2.74 CL .128 3.25 CW .108 2.74 L

20、L1 .022 .038 0.56 0.96 LL2 .017 .035 0.43 0.89 LS1 .036 .040 0.91 1.02 LS2 .071 .079 1.81 2.01 LW .016 .024 0.41 0.61 r .008 .203 r1 .012 .305 r2 .022 .559 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas (

21、tungsten with gold plating 60 micro inches min over 80 micro inches min nickel. 4. Pad 1 = drain, Pad 2 = source, Pad 3 = gate, Pad 4 = shielding connected to the lid. FIGURE 2. Physical dimensions, surface mount (UB version). CERAMIC Provided by IHSNot for ResaleNo reproduction or networking permit

22、ted without license from IHS-,-,-MIL-PRF-19500/476F 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer a

23、uthorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and ph

24、ysical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (similar to TO-18) and 2 (UB, surface mount) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead fini

25、sh is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. Th

26、e prefixes JAN, JANTX, and JANTXV can be abbreviated as J, JX, and JV respectively. The “2N“ prefix and the “UB“ suffix can also be omitted. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled

27、 with certain precautions to avoid damage due to the accumulation of electrostatic charge. The following handling practices shall be followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle de

28、vices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent, if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any l

29、ead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test require

30、ments. The electrical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo

31、reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/476F 6 4 VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (s

32、ee 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of

33、the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANTX and JANTXV levels only)

34、. Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500 Measurement JANT

35、X and JANTXV levels 9 and 10 Not applicable 11 ID(off)1, rds(on)1 12 See 4.3.1 13 Subgroup 2 of table I herein; ID(off)1= 0.5 nA dc or 100 percent of initial value, whichever is greater. rds(on)1= 20 percent of initial value. 4.3.1 Power burn-in. Power burn-in conditions are in accordance with metho

36、d 1039 of MIL-STD-750, condition A and as follows: TA= +150C; VGS= 24 V dc; VDS= 0. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500,

37、 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) shall be in accordance with table I,

38、 subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/476F 7 4.4.2.1 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV of MIL-PRF-19500). Subgroup Method Condition B3 1027 VGS= 24 V dc; TA= +125C; VDS= 0. B6 1032 TA=

39、 +175C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condi

40、tion C2 1056 Thermal shock: Test condition C, time at temperature extremes = 15 minutes minimum. C2 2036 Lead fatigue: Test condition E (not applicable to UB suffix devices.) C6 1026 VGS= 24 V dc; TA= +125C; VDS= 0. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with t

41、he conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tabl

42、es and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/476F 8 * TABLE I. Group A inspection. Inspection 1/ MIL-STD

43、-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Gate to source breakdown voltage 3401 Bias condition C; IG= 1.0 A dc; VDS= 0 V(BR)GSS 30 V dc Gate reverse current 3411 Bias condition C; VGS= 20 V dc; VDS= 0 IGSS 500 pA dc Drain cutoff cu

44、rrent 3413 Bias condition A ID(off)1 2N5114, 2N5114UB VDS= -15 V dc; VGS= 12 V dc -500 pA dc 2N5115, 2N5115UB VDS= -15 V dc; VGS= 7.0 V dc -500 pA dc 2N5116, 2N5116UB VDS= -15 V dc; VGS= 5.0 V dc -500 pA dc Zero-gate-voltage drain current 3413 Bias condition C; VDSto be pulsed see 4.5.1 IDSS 2N5114,

45、 2N5114UB VDS= -18 V dc; VGS= 0 -30 -90 mA dc 2N5115, 2N5115UB VDS= -15 V dc; VGS= 0 -15 -60 mA dc 2N5116, 2N5116UB VDS= -15 V dc; VGS= 0 -5.0 -25 mA dc Drain to source on voltage 3405 Bias condition B VDS(on) 2N5114, 2N5114UB ID= -15 mA dc; VGS= 0 -1.3 V dc 2N5115, 2N5115UB ID= -7.0 mA dc; VGS= 0 -

46、0.8 V dc 2N5116, 2N5116UB ID= -3.0 mA dc; VGS= 0 -0.6 V dc Gate to source cutoff voltage 3403 VGS(off)2N5114, 2N5114UB VDS= -15 V dc; ID= -1.0 nA dc 5.0 10 V dc 2N5115, 2N5115UB VDS= -15 V dc; ID= -1.0 nA dc 3.0 6.0 V dc 2N5116, 2N5116UB VDS= -15 V dc; ID= -1.0 nA dc 1.0 4.0 V dc Small-signal drain

47、to source on resistance 3423 VGS= 0; ID= -1 mA dc rds(on)12N5114, 2N5114UB 75 2N5115, 2N5115UB 100 2N5116, 2N5116UB 175 Small-signal drain to source on resistance 3423 VGS= 0; ID= 0; f = 1 kHz rds(on)22N5114, 2N5114UB 75 2N5115, 2N5115UB 100 2N5116, 2N5116UB 175 See footnote at end of table. * Provi

48、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/476F 9 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 High temperature operation: Gate reverse current 3411 TA= +150C Bias condition C, VGS = 20 V dc; VDS= 0 IGSS1.0 A dc Drain cutoff current 3413 Bias condition A; ID(off)22N5114, 2N5114UB VGS= 12 V dc; VDS= -15 V dc -1.0 A dc 2N5115, 2N5115UB VGS= 7.0 V dc; VDS= -15 V dc -1.0 A dc 2N5116, 2N5116UB VGS= 5.0 V dc; VDS= -15 V dc -1.0 A dc Subgroup 4 S