DLA MIL-PRF-19500 503 G-2011 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER ULTRA FAST RECOVERY TYPES 1N6073 THROUGH 1N6081 JAN JANTX JANTXV AND JANHC.pdf

1、 MIL-PRF-19500/503G 18 October 2011 SUPERSEDING MIL-PRF-19500/503F 28 July 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, TYPES 1N6073 THROUGH 1N6081, JAN, JANTX, JANTXV, AND JANHC This specification is approved for use by all Departm

2、ents and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for three separate series of silicon, ultra fast recover

3、y semiconductor diodes for use as power rectifiers. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. One level of product assurance are provided for each unencapsulated device type. * 1.2 Physical dimensions. See figures 1 (axial lead) and 2 (die) he

4、rein. 1.3 Maximum ratings Unless otherwise specified, TA= +25C. Col. 1 Types Col. 2 VRCol. 3 VRWMCol.4 IO1Col.5 IO2Col. 6 trr(see fig. 3) Col. 7 TSTGand TJCol.8 RJLCol. 9 IFSMTA= +55C (1) (2) (3) TL= +70C (1) (4) (5) IF= 0.5 A IR= -1.0 A IRR= -0.25 A (4) tp= 8.3 ms V dc V (pk) A dc A dc ns C C/W A (

5、pk) 1N6073 50 50 .85 3.0 30 -65 to +155 13.0 35 1N6074 100 100 .85 3.0 30 -65 to +155 13.0 35 1N6075 150 150 .85 3.0 30 -65 to +155 13.0 35 1N6076 50 50 1.3 6.0 30 -65 to +155 8.5 75 1N6077 100 100 1.3 6.0 30 -65 to +155 8.5 75 1N6078 150 150 1.3 6.0 30 -65 to +155 8.5 75 1N6079 50 50 2.0 12.0 30 -6

6、5 to +155 5.0 175 1N6080 100 100 2.0 12.0 30 -65 to +155 5.0 175 1N6081 150 150 2.0 12.0 30 -65 to +155 5.0 175 (1) Higher IOrating is allowable provided that TLor TAis maintained such that TJ 155C. (2) IOrating without heat sinking, special mounting or forced air across the device body or leads. (3

7、) Derate IOrating to zero current linearly, from TA= +55C to +155C. (4) IOand RJLrating at L = 0 and without forced air across the device body or leads. (5) Derate IOrating to zero current linearly, from TL= 70C to +155C (see figures 3, 4, and 5). AMSC N/A FSC 5961 INCH-POUND Comments, suggestions,

8、or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at

9、 https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 January 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/503G 2 Symbol Dimensions Notes

10、 1N6073 through 1N6075 1N6076 through 1N6078 1N6079 through 1N6081 Inches Millimeters Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max Min Max Min Max BD .055 .083 1.40 2.11 .065 .140 1.65 3.56 .135 .190 3.43 4.83 4 LD .026 .033 0.66 0.84 .036 .042 0.91 1.07 .036 .042 0.91 1.07

11、BL .125 .250 3.18 6.35 .125 .250 3.18 6.35 .125 .250 3.18 6.35 3 LL 1.00 1.30 25.4 33.0 .90 1.30 22.86 33.0 .90 1.30 22.86 33.0 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension BL shall include the entire body including slugs and sections of the

12、 lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 4. Dimension BD shall be measured at the largest diameter. 5. In accordance with ASME Y14.5M, diameters are equivalent to

13、x symbology. * FIGURE 1. Physical dimensions (axial lead). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/503G 3 Symbol Dimensions 1N6073 through 1N6075 (see note 3) 1N6076 through 1N6078 (see note 4) 1N6079 through 1N6081 (see note 4)

14、 Inches Millimeters Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max Min Max Min Max A .039 .043 0.99 1.09 .066 .070 1.68 1.78 .128 .132 3.25 3.35 B .031 .035 0.79 0.89 .057 .061 1.45 1.55 .119 .123 3.02 3.12 C .008 .012 0.20 0.30 .008 .012 0.20 0.30 .008 .012 0.20 0.30 NOTES: 1

15、 Dimensions are in inches. 2. Millimeters are given for general information only. 3. Anode thickness: AL - 45,000 minimum; cathode thickness: AU - 2,500 minimum. 4. Anode thickness: AL - 60,000 minimum; cathode thickness: AU - 2,500 minimum. 5. In accordance with ASME Y14.5M, diameters are equivale

16、nt to x symbology. FIGURE 2. Physical dimensions, JANHC (A - version). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/503G 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5

17、 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all speci

18、fied requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified her

19、ein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices.

20、 (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the c

21、ontract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General.

22、 The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by amanufacturer authorized by the qualifying activity for listing on the applicable qualified manufa

23、cturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. The Interface and physical dimensions shall be as specified in MIL-PRF-195

24、00, and figures 1 (axial lead) and 2 (die) herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and as specified herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. Th

25、ese devices shall be constructed in a manner and using material which enable thediodes to meet the applicable requirements of MIL-PRF-19500 and this document. The diode shall be metallurgically bonded, non-cavity, double plug construction. 3.5 Marking. Marking shall be in accordance with MIL-PRF-195

26、00. At the option of the manufacturer, the following marking may be omitted from the body of the diode, but shall be retained on the initial container. 3.5.1 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end. Provided by IHSNot for ResaleN

27、o reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/503G 5 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performancecharacteristics are as specified in 1.3 and table I herein. 3.7 Electrical test requirements. The electric

28、al test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality andshall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. T

29、he inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E quali

30、fication. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the p

31、rior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC devices. Qualification for JANHC devices shall be in accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-M

32、IL-PRF-19500/503G 6 4.3 Screening (JANTX and JANTXV levels). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not

33、be acceptable. Screen (see appendix E, table E-IV of MIL-PRF-19500) JANTXV and JANTX Level 1a 1b Not required Required (JANTXV only) 2 Not required 3a (1) 3c Required Thermal impedance (see 4.3.1) 4 Not applicable 5 Not applicable 6 Not applicable 8 Not required 9 Not applicable 10 TA= +125C 11 VF1a

34、nd IR112 Required, see 4.3.2 13 Subgroup 2 of table I herein; VF1= 0.1V dc; IR1= (1) or 100 percent of the initial value, whichever is greater. Scope display evaluation (see 4.5.3). 15 Not required 16 Not required (1) IR1is as follows: 1N6073 through 1N6075 = +0.250 A dc. 1N6076 through 1N6078 = +1.

35、0 A dc. 1N6079 through 1N6081 = +5.0 A dc. * 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70

36、s max. See table II, subgroup 4 herein. 4.3.1.1 For initial qualification and re-qualification. Read and record data (ZJX) shall be supplied to the qualifying activity on one lot (random sample of 500 devices minimum) prior to shipment. Twenty-two samples shall be serialized and provided to the qual

37、ifying activity for test correlation. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.6.1): IO(min)= IO(rated). TA= 55C maximum. Test conditions in accordance with method 1038 of MIL-STD-750, condition B. Adjust IOor TAto achieve the required TJ. TJ= 135C minimum. Wi

38、th approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and pe

39、rformance history will be essential criteria for burn-in modification approval. 4.3.3 Screening (JANHC). Screening of die shall be in accordance with appendix G of MIL-PRF-19500. As a minimum, die shall be 100-percent probed to ensure compliance with table I, subgroup 2. Burn-in duration for the JAN

40、HC follows JANTX requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/503G 7 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group

41、A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measu

42、rements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. Subgroup Method Condition B2 1056 Thermal shock, 0C to +100C, 10 cycles. B2 1051 Temperature cycling, -55C to +175C, 25 cycles. B2 4066 IFSM= rated IFSM(see 1.3); ten surges of 8.3 ms ea

43、ch at 1 minute intervals, super-imposed on IO1(see 1.3); VRWM= rated VRWM(see 1.3). B3 1027 IO1(min)= rated IO1(see col. 4 of 1.3); adjust IOto achieve the required TJapply VR= rated VRWM(see 1.3), f = 50-60 Hz (see 4.3.1.1). Mounting conditions (see 4.5.5.1). TJ= 150 minimum. B5 4081 +25C TA +35C (

44、recorded before test is performed); RJL(maximum) (see col. 8 of 1.3); L = 0 inch (0 mm). 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500. Electrical measurements (end-points)

45、and delta requirements shall be in accordance with the applicable steps of table III herein. * 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 1056 Thermal shock, 0C to +100C, 15 cycles. C2 1051 Temperature cycling, -55C to +175C, 25 cycles. * C2 20

46、36 Tension test condition A, t = 15s, for 1N6073 through 1N6075, weight = 12 lbs., for 1N6076 through 1N6081, weight = 20 lbs. C5 4081 +25C TA +35C (recorded before test is performed); RJL(maximum) (see col. 8 of 1.3); L = 0 inch (0 mm). C6 1027 IO1(min)= rated IO1(see col. 4 of 1.3); adjust IOto ac

47、hieve the required TJapply VR= rated VRWM(see 1.3), f = 50-60 Hz (see 4.3.1.1). Mounting conditions (see 4.5.5.1). TJ= 150 minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/503G 8 4.4.4 Group E inspection. Group E inspection shal

48、l be conducted in accordance with the tests and conditions specified for subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.5 Methods

49、of inspection. Methods of inspection shall be specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Inspection conditions. Unless otherwise specified, all inspections shall be conducted at an ambient temperature TAof +25