DLA MIL-PRF-19500 525 F-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N6546 2N6546T1 2N6546T3 2N6547 2N6547T1 AND 2N6547T3 JAN JANTX JANTXV6 AND JANHC.pdf

1、 MIL-PRF-19500/525F 13 December 2013 SUPERSEDING MIL-PRF-19500/525E 1 October 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6546, 2N6546T1, 2N6546T3, 2N6547, 2N6547T1, AND 2N6547T3 JAN, JANTX, JANTXV6 AND JANHC This specification is approved for u

2、se by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Th

3、ree levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-3), figure 2 (TO-254), figure 3 (TO-257) and figure 4 (JANHCA). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Limits PT(1) VCEXVCEOVEBOIBICTJand TST

4、GRJC (2) TC= +25C TC= +100C W W V dc V dc V dc A dc A dc C C/W 2N6546 175 100 600 300 8 10 15 -65 to +200 1.0 2N6546T1 175 100 600 300 8 10 15 -65 to +200 1.0 2N6546T3 125 100 600 300 8 10 15 -65 to +200 1.4 2N6547 175 100 850 400 8 10 15 -65 to +200 1.0 2N6547T1 175 100 850 400 8 10 15 -65 to +200

5、1.0 2N6547T3 125 100 850 400 8 10 15 -65 to +200 1.4 (1) See figure 5 for derating curves. (2) See figures 6, 7, and 8 for thermal impedance graphs. AMSC N/A FSC 5961INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 39

6、90, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply wit

7、h this document shall be completed by 13 February 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/525F 2 1.4 Primary electrical characteristics. Limits hFE2(1) hFE3(1) Cobohfe Switching times (2) VCE= 2 V dc IC= 5 A dc VCE= 2 V dc

8、 IC= 10 A dc VCB= 10 V dc IE= 0 0.1 MHz f 1 MHz VCE= 10 V dc IC= 0.5 A dc f = 1 MHz VCC= 250 V dc IC= 10 A dc tontoffMin Max 12 60 6 pF 500 6 30 s 1.0 s 4.7 (1) Pulsed (see 4.5.1). (2) See figure 9 for pulse response circuits. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section

9、 are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are ca

10、utioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this

11、 document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Te

12、st Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise

13、noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Prov

14、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/525F 3 FIGURE 1. Dimensions and configuration (TO-3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/525F 4 Dimensions Symbol I

15、nches Millimeters Notes Min Max Min Max CD .875 22.23 2 CH .250 .450 6.35 11.43 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 5 HT .050 .135 1.27 3.43 LD .038 .043 0.97 1.09 3, 4, 8 LL .312 7.92 3, 4, 8 L1.050 1.27 MHD .151 .161 3.84 4.09 6 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 4 PS

16、1.205 .225 5.21 5.72 4 S1 .655 .675 16.64 17.15 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Body contour is optional within zone defined by CD. 3. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plan

17、e. When gauge is not used, measurement shall be made at seating plane. 4. Both terminals. 5. At both ends. 6. Two holes. 7. The collector shall be electrically connected to the case. 8. LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1. 9. In accordance with ASME Y14.5M

18、, diameters are equivalent to x symbology. 10. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to 0.006 inch (0.15 mm)

19、convex overall. 11. Mounting holes shall be deburred on the seating plane side. FIGURE 1. Dimensions and configuration (TO-3) - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/525F 5 NOTES: 1. Dimensions are in inches. Millim

20、eters are given for general information only. 2. All terminals are isolated from case. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration for 2N6546T1 and 2N6547T1 (TO-254). Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545

21、 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 13.46 13.97 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Base Term 2 Collector Term 3 Emitter TO-254

22、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/525F 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Methods used for electrical isolation of the terminals feedthroughs shall employ materi

23、als that contain a minimum of 90 percent AL2O3 (ceramic). 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Dimensions and configuration for 2N6546T3 and 2N6547T3 (TO-257). Dimensions Ltr Inches Millimeters Min Max Min Max BL .410 .430 10.41 10.92 CH .190 .200 4.8

24、3 5.08 LD .025 .035 0.64 0.89 LL .500 .750 12.70 19.05 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.63 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Base Term 2 Collector Term 3 Emitter TO-257 Provided by IHSNot for Resale

25、No reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/525F 7 Dimensions Ltr. Inches Millimeters Min Max Min Max A, C .205 .215 5.21 5.46 DESIGN DATA Metalization: Top: Aluminum 54,000 minimum, 60,000 nominal. Back: Al/Ti/Ni/Au 10,000 minimum, 12,500 nominal. Back side: C

26、ollector. Chip thickness: .012 inch (0.305 mm) .002 inch (0.051 mm). Bonding pad: B = .018 inch (0.46 mm) x .040 (1.02 mm). E = .018 inch (0.46 mm) x .040 (1.02 mm). FIGURE 4. JANHCA and JANKCA (A version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without l

27、icense from IHS-,-,-MIL-PRF-19500/525F 8 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by

28、the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimens

29、ions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-3), figure 2 (TO-254), figure 3 (TO-257) and figure 4 (JANHCA). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of lead fin

30、ish or formation is desired, it shall be specified in the acquisition requirements (see 6.2). 3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices to meet the applicable requirements of MIL-PRF-19500 and this document. 3.5 Marking. Marking s

31、hall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in t

32、able I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein ar

33、e classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performe

34、d for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first

35、inspection lot of this revision to maintain qualification. 4.2.2 JANHC qualification. JANHC qualification inspection shall be in accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/525F 9 * 4.3 Screening (JANT

36、X and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-P

37、RF-19500) Measurements JANTX, JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.2). 10 TA= +150C; t = 48 hours min. VCB= 200 V dc for 2N6546, 2N6546T1, 2N6546T3. VCB= 300 V dc for 2N6547, 2N6547T1, 2N6547T3. 11 hFE2; ICEX112 See 4.3.1. 13 Subgroup 2 of table I herein. ICEX1

38、= 100 percent of initial value or 2 A dc, whichever is greater; hFE2= 25 percent of initial value. 17 For TO-254 packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be rep

39、eated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ= + 175C minimum, VCB 20 V dc, TA= +35C maximum. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelin

40、es in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.3.3 Screening (JANHC). Screening of JANHC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”

41、. Burn-in duration for the JANHC level follows JANTX requirements. * 4.3.4 Dielectric withstanding voltage. a. Magnitude of test voltage900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltage.All leads to case (bunch connection). d. Method of co

42、nnectionMechanical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time500 V/second. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/525F 10 4.4 Conformance i

43、nspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specifie

44、d for subgroup testing in table E-VIB of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, herein. 4.4.2.1 Group B inspection, table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500 Subgroup Method Conditions B3 1037 For solder die attach:

45、VCB 20 V dc, for 2,000 cycles, TA +35C, adjust power or current to achieve a minimum TJ= +100C. B3 1027 For eutectic die attach: VCB 20 V dc; adjust PTto achieve TJ= +175C minimum, TA +35C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified fo

46、r subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, herein. Subgroup Method Conditions C2 2036 Test condition A; weight = 10 pounds (4.54 Kg); t = 15 seconds. C5 3131 See 4.3.2, RJC= 1.0C/W for 2N6546, 2N6546T1, 2N

47、6547 and 2N6547T1; RJC= 1.4C/W for 2N6546T3 and 2N6547T3. C6 1037 For solder die attach: VCB 20 V dc, for 6,000 cycles, TA +35C, adjust power or current to achieve a minimum TJ= +100C. C6 1026 For eutectic die attach: VCB 20 V dc; adjust PTto achieve TJ= +175C minimum, TA +35C. 4.4.4 Group E inspect

48、ion. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo r