DLA MIL-PRF-19500 534 G-2011 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N5002 AND 2N5004 JAN JANTX JANTXV JANS JANSM JANSD JANSP JANSL JANSR JANSF JANSG JANSH JANHCB A.pdf

1、 MIL-PRF-19500/534G 27 July 2011 SUPERSEDING MIL-PRF-19500/534F 20 July 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N5002 AND 2N5004, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANKCB, JANKCBM, JANK

2、CBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH. This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Sc

3、ope. This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance for each

4、unencapsulated device type die. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (T6-C, similar to TO-59) and figure 2 (JANHC and JANKC die). 1.3 Maximum r

5、atings unless otherwise specified TA= +25C. PT(1) TA= 25C PT (2) TC= 25C RJARJC(3) VCBOVCEOVEBOICIC (4) Reverse pulse energy Tstgand TJW 2 W 58 C/W 88 C/W 3 V dc 100 V dc 80 V dc 5.5 A dc 5 A dc 10 mJ 15 C -65 to +200 (1) Derate linearly 11.4 mW/C for TA 25C. (2) For derating see figure 3. (3) For t

6、hermal impedance see figure 4. (4) This value applies for Pw 8.3 ms, duty cycle 1 percent. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductord

7、la.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . * Reactivated after (27 October 2011) and may be used for new and existing designs and acquisitions. The documentation and pr

8、ocess conversion measures necessary to comply with this document shall be completed by 27 October 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/534G 2 1.4 Primary electrical characteristics at TC= +25C. Limits hFE2(1) VCE = 5 V

9、IC= 2.5 A |hfe| VCE= 5 V IC= 500 mA dc f = 10 MHz VBE(sat)2(1) IC= 5 A dc IB= 500 mA dc VCE(sat)2(1) IC= 5 A dc IB= 500 mA dc CoboVCB=10 V dc IE= 0 f = 1 MHz 2N5002 2N5004 2N5002 2N0004 Min Max 30 90 70 200 6 7 V dc 2.2 V dc 1.5 pF 250 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The

10、 documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of

11、 this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards,

12、and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF D

13、EFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-50

14、94.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unle

15、ss a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/534G 3 Dimension Ltr Inches Millimeters Notes Min Max Min Max A1.250 6.35 CD .330 .360 8.38 9.14 CD1.370 .437 9.40 11.10 CH .320 .468 8.13 11.89

16、HF .424 .437 10.77 11.10 HT .090 .150 2.29 3.81 OAH .575 .763 14.61 19.38 5 PS .185 .215 4.70 5.46 4, 8 PS1.090 .110 2.29 2.79 4, 8 SL .400 .455 10.16 11.56 SU .078 1.98 7 T .040 .065 1.02 1.65 UD .155 .189 3.94 4.80 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general informatio

17、n only. 3. Reference: Screw thread standards for Federal Standard H28/1 , (FED-STD-H28/1). 4. The orientation of the terminals in relation to the hex flats is not controlled. 5. All three terminals. 6. The case temperature may be measured anywhere on the seating plane within .125 inch (3.18 mm) of t

18、he stud. 7. Terminal spacing measured at the base seat only. 8. This dimension applies to the location of the center line of the terminals. 9. Terminal - 1, emitter; terminal - 2, base; terminal - 3, collector. Collector lead is isolated from the case. 10. In accordance with ASME Y14.5M, diameters a

19、re equivalent to x symbology. FIGURE 1. Physical dimensions of transistor types 2N5002 and 2N5004 (T6-C, similar to TO-59). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/534G 4 1. Die size .120 inch (3.05 mm) x .120 inch (3.05 mm) .00

20、2 inch (0.05 mm). 2. Die thickness .014 inch (0.35 mm) .0015 inch nominal (0.04 mm). 3. Top metal Aluminum, 54,000 minimum, 60,000 nominal. 4. Back metal Gold 6,000 minimum, 8,000 nominal. 5. Backside Collector 6. Bonding pad B = .060 x .012 inch (1.5 mm x 0.30 mm). E = .050 x .012 inch (1.27 mm x 0

21、.30 mm). FIGURE 2. JANHC and JANKC (B-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/534G 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified h

22、erein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and def

23、initions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. RJAThermal resistance junction to ambient. RJCThermal resistance junction to case. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MI

24、L-PRF-19500, and on figure 1 (T6-C, similar to TO-59) and 2 (die) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Radiation

25、 hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and tab

26、le I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identif

27、ier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. T

28、he inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as

29、 specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revi

30、sion of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo re

31、production or networking permitted without license from IHS-,-,-MIL-PRF-19500/534G 6 * 4.3 Screening. Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits

32、of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance method 3131 of MIL-STD-750 (see 4.3.3) Thermal impedance method 3131 of MIL-STD-750 (see 4.3.3) 9 ICES1and hFE2Not applicable 11 ICES1 and hFE2I

33、CES1= 100 percent or 100 nA, whichever is greater; hFE2= 20 percent ICES1and hFE212 See 4.3.2 See 4.3.2 13 Subgroups 2 and 3 of table I herein; ICES1= +100 percent of initial value or 100 nA, whichever is greater. hFE2= 20 percent Subgroup 2 of table I herein; ICES1= +100 percent of initial value or

34、 100 nA, whichever is greater. hFE2= 20 percent * (1) Shall be performed anytime after temperature cycling, screen 3a; TX and TXV do not need to be repeated in screening requirements. 4.3.1 Screening (JANHC or JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a minimum, die shal

35、l be 100-percent probed to ensure compliance with table 1, subgroup 2. Burn-in duration for lot acceptance for the JANKC level follows JANS requirements. Burn-in duration for lot acceptance for the JANHC level follows JANTX requirements. 4.3.2 Power burn-in conditions. Power burn-in conditions are a

36、s follows: VCB= 10 - 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum, TAambient rated as defined in 1.3. TA 35C. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mount

37、ing conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. Use method 3100 of MIL-STD-750 to measure TJ

38、. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). The thermal impedance limit used in screen 3c of 4.3 and the subgroup 2 of tabl

39、e I herein shall comply with the thermal impedance graph in figure 4 (less than or equal to the curve value at the same tHtime) and shall be less than the process determined statistical maximum limit as outlined in method 3131. See table III, subgroup 4 herein. Provided by IHSNot for ResaleNo reprod

40、uction or networking permitted without license from IHS-,-,-MIL-PRF-19500/534G 7 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample of s

41、creened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted

42、in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points)

43、 shall be in accordance with table I, subgroup 2. Delta requirements shall be in accordance with the steps of 4.5.3 herein as specified in the notes for 4.5.3. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be afte

44、r each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2. Delta requirements shall be in accordance with the steps of 4.5.3 herein as specified in the notes for 4.5.3. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB= 10 V dc mi

45、nimum, PT= 2.5 W minimum, TA= +25C 3C; ton= toff= 3 minutes minimum for 2,000 cycles. No heat sink or forced-air cooling on devices shall be permitted. B5 1027 VCB= 20 V dc, TJ= +275C minimum for 96 hours; adjust the chosen TAand PTto give an average lot TJ= +275C. Marking legibility requirements sh

46、all not apply. B6 3131 See 4.3.3 herein. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI shall be analyzed to

47、the extent possible to identify root cause and corrective action. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB= 10 V dc, power shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined in 1.3. n = 45 devices, c = 0. The

48、sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life, TA= +150C, VCB= 80 percent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 10

49、32 High-temperature life (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/534G 8 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, an