DLA MIL-PRF-19500 535 D-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON POWER TYPES 2N5003 AND 2N5005 JAN JANTX JANTXV JANS JANHC AND JANKC.pdf

1、 MIL-PRF-19500/535D 9 July 2013 SUPERSEDING MIL-PRF-19500/535C 31 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER, TYPES 2N5003 AND 2N5005, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencie

2、s of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switchin

3、g applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated die. 1.2 Physical dimensions. See figure 1 (T6-C, similar to TO-59) and figure 2 (JANHC and JANKC). 1.3 Maximum ratings un

4、less otherwise specified TA= +25C. PT(1) TA= +25C PT(2) TC= +25C RJARJC(3) VCBOVCEOVEBOICIC(4) Reverse pulse energy (5) Tstg and TJW 2 W 58 C/W 88 C/W 3 V dc 100 V dc 80 V dc 5.5 A dc 5 A dc 10 mJ 15 C -65 to +200 (1) Derate linearly 11.4 mW/C for TA +25C. (2) For derating see figure 3. (3) For ther

5、mal impedance see figure 4. (4) This value applies for PW 8.3 ms, duty cycle 1 percent. (5) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit figure 5 herein. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questi

6、ons on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/a

7、ssist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 October 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/535D 2 1.4 Primary electrical characteristics

8、. Limits hFE2(1) VCE= 5 V IC= 2.5A |hfe| VCE= 5 V IC= 500 mA dc f = 10 MHz VBE(sat)2(1) IC= 5 A dc IB= 500 mA dc VCE(Sat)2(1) IC= 5 A dc IB= 500 mA dc Cobo VCB = 10 V dc IE= 0 f = 1 MHz 2N5003 2N5005 2N5003 2N5005 Min Max 30 90 70 200 6 7 V dc 2.2 V dc 1.5 pF 250 (1) Pulsed (see 4.5.1). 2. APPLICABL

9、E DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made t

10、o ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following

11、 specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specif

12、ication for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia,

13、 PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and re

14、gulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/535D 3 Dimension Ltr Inches Millimeters Notes Min Max Min Max A1.250 6.35 CD .330 .360 8.38 9.14 CD1.370 .437 9.40 11.10 CH .320 .4

15、68 8.13 11.89 HF .424 .437 10.77 11.10 HT .090 .150 2.29 3.81 OAH .575 .763 14.61 19.38 5 PS .185 .215 4.70 5.46 4, 8 PS1.090 .110 2.29 2.79 4, 8 SL .400 .455 10.16 11.56 SU .078 1.98 7 T .040 .065 1.02 1.65 UD .155 .189 3.94 4.80 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for gene

16、ral information only. 3. See NSB Handbook H28, “Screw-Thread Standards for Federal Services”. 4. The orientation of the terminals in relation to the hex flats is not controlled. 5. All three terminals. 6. The case temperature may be measured anywhere on the seating plane within .125 inch (3.18 mm) o

17、f the stud. 7. Terminal spacing measured at the base seat only. 8. This dimension applies to the location of the center line of the terminals. 9. Terminal - 1, emitter; terminal - 2, base; terminal - 3, collector. Collector lead is isolated from the case. 10. In accordance with ASME Y14.5M, diameter

18、s are equivalent to x symbology. FIGURE 1. Physical dimensions of transistor types 2N5003 and 2N5005 (T6-C, similar to TO-59). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/535D 4 Ltr Dimensions Inches Millimeters Min Max Min Max A .1

19、17 .127 2.97 3.23 NOTES: 1. Dimensions are in inches. Inches mm 2. Millimeters are given for general information only. .005 0.13 3. Unless otherwise specified, tolerance is .005 (0.13 mm). .006 0.15 4. The physical characteristics of the die are: .0072 0.183 Thickness: .008 (0.20 mm) to .012 (0.30 m

20、m), tolerance is .005 (0.13 mm). .008 0.20 Top metal: Aluminum, 40,000 minimum, 50,000 nominal. .012 0.30 Back metal: Gold 2,500 minimum, 3,000 nominal. .015 0.38 Back side: Collector. .117 2.97 Bonding pad: B = .015 (0.38 mm) x .0072 (.183 mm). .127 3.23 E = .015 (0.38 mm) x .0060 (.152 mm). FIGURE

21、 2. Physical dimensions JANHCA and JANKCA die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/535D 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein

22、. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definiti

23、ons. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. RJAThermal resistance junction to ambient. RJCThermal resistance junction to case. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF

24、-19500, and on figures 1 and 2. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see Error! Reference source not found.). 3.5 Electrical performan

25、ce characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-PRF-1

26、9500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are

27、classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall b

28、e performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on

29、the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/535D 6 * 4.3 Screening (list applicable JAN levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500

30、and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E, Measurement table E-IV of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance

31、(see 4.3.3) Thermal impedance (see 4.3.3) 9 ICES1and hFE2Not applicable 11 ICES1and hFE2ICES1= 100 percent or 100 nA, whichever is greater; hFE2= 20 percent. ICES1and hFE212 See 4.3.2 See 4.3.2 13 Subgroups 2 and 3 of table I herein: ICES1= +100 percent of initial value or 100 nA, whichever is great

32、er hFE2= 20 percent. Subgroup 2 of table I herein: ICES1= +100 percent of initial value or 100 nA, whichever is greater hFE2= 20 percent. * (1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do and does not need to be repeated in screening requirements. 4.3.

33、1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500 “Discrete Semiconductor Die/Chip Lot Acceptance“. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.2 Power burn-in conditions. Power burn

34、-in conditions are as follows: VCB= 10 - 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum, TAambient rated as defined in 1.3. NOTE: No heat sink or forced air cooling on the device shall be permitted. With approval of the qualifying activity an

35、d preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential c

36、riteria for burn-in modification approval. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/535D 7 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the gui

37、delines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A in

38、spection. Group A inspection shall be conducted in accordance with, table E-V of MIL-PRF-19500 and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with conditions specified for the subgroup testing in appendix E, table E-VIA (JANS) and 4.4.2.2 herein.

39、End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable steps of 4.5.3 herein. * 4.4.2.1 Group B inspection, appendix E, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition * B4 1037 VCB= 10 V

40、dc, adjust device current, or power, to achieve a minimum TJof +100C. B5 1026 VCB= 10 V dc; PD 100 percent of maximum rated PT(see 1.3). (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) Option 1: 96 hours minimum sample size in accordance with MIL-PRF

41、-19500, table E-VIa, adjust TAor PDto achieve TJ= +275C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TAor PDto achieve a TJ= +225C minimum. * B6 3131 See 1.3. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a

42、lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Step Method Condition 1 1026 Steady-state life: Test condition B, 1,000 hours minimum, VCB=

43、 10 V dc, power shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, an

44、d the actual time of test is at least 340 hours. 2 1048 Blocking life, TA= +150C, VCB= 80 percent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. Provided by IHSNot for ResaleNo reproduction or networki

45、ng permitted without license from IHS-,-,-MIL-PRF-19500/535D 8 * 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafe

46、r in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. * b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone

47、 to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. * 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the test and condition

48、s specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicab

49、le steps of 4.5.3 herein; delta requirements only apply to subgroup C6. 4.4.3.1 Group C inspection (JANS), table VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition A, weight = 7 pounds, 5 ounces, application time = 15 seconds; Test condition D1, torque = 6 inch-ounce, application time = 15 seconds; Tes