DLA MIL-PRF-19500 547 D-2011 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL SILICON TYPES 2N6660 AND 2N6661 JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/547D 29 August 2011 SUPERSEDING MIL-PRF-19500/547C 24 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6660 AND 2N6661, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agenci

2、es of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high freq

3、uency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-205AD). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) TC= +25C PTTA

4、= +25C RJCVDSVDGR VGSID1(3) TC= +25C ID2(3) TC= +100C ISIDMTJand TSTG2N6660 2N6661 W 6.25 6.25 mW 725 725 C/W 20 20 V dc 60 90 V dc 60 90 V dc 20 20 A dc 0.99 0.86 A dc 0.62 0.54 A dc -0.99 -0.86 A (pk) 3 3 C -65 to +150 (1) Derate linearly by 0.05 W/C for TC +25C. (2) RGS 1 M ohm. * (3) The followi

5、ng formula derives the maximum theoretical IDlimit. IDis limited by package and internal construction. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Se

6、miconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDThe documentation and process conversion measures necessary to comply with

7、this revision shall be completed by 29 November 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/547D 2 1.4 Primary electrical characteristics. TC= +25C unless otherwise noted. Type Min V(BR)DSSVGS= 0 V ID= 10 A dc VGS(th)1VDS VGSI

8、D= 1.0 mA dc Max IDSS1VGS= 0 V Max rDS(on)1/ VGS= 10 V dc VDS= 80 percent of rated VDSTJ= +25C at ID1TJ= +150C at ID22N6660 2N6661 V dc 60 90 V dc Min Max 0.8 2.0 0.8 2.0 A dc 1.0 1.0 Ohm 3.0 4.0 Ohm 6.33 8.44 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this

9、section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users

10、 are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part

11、of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-7

12、50 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of preced

13、ence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption

14、has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/547D 3 FIGURE 1. Physical dimensions (TO-205AD). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/547D 4 L

15、tr Dimensions Notes Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 TW .028 .034 0.71 0.86 2 TL .029 .045 0.74 1.14 3 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.70 19.05 7,8 LC 0.200 TP 5.08 TP 6 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.25

16、0 6.35 7,8 P .100 2.54 5 Q .050 1.27 4 R .010 0.25 9 45 TP 45 TP 6 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Beyond radius (r) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 3. Dimension TL measured from maximum HD. 4. Outline

17、in this zone is not controlled. 5. Dimension CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true positio

18、n (TP) at maximum material condition (MMC) relative to tab at MMC. 7. LU applies between L1and L2. LD applies between L2and L minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to

19、the case. FIGURE 1. Physical dimensions(TO-205AD) - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/547D 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified h

20、erein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, a

21、nd definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (TO-205AD) herein. 3.4.1 Lead finish. Lead finish shall be s

22、olderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Marking. Marking shall be in accordance with

23、 MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. The following handling practices shall be

24、 followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maint

25、ain relative humidity above 50 percent if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical performanc

26、e characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4 and table I. 3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shall be pr

27、ocessed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/547D 6 4. VERIFICATION 4.1 Classification of

28、 inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I). * 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and

29、 herein. Alternate flow is allowed for qualification inspection in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did n

30、ot request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without l

31、icense from IHS-,-,-MIL-PRF-19500/547D 7 * 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of tabl

32、e I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement (1) (2) JANS level JANTX and JANTXV levels (3) Gate stress test (see 4.3.2) Gate stress test (see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.2) Method 3161 of MIL-STD-750, thermal imped

33、ance (see 4.3.2) 9 Subgroup 2 of table I herein. IDSS1, IGSSF1, IGSSR1,Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1. Subgroup 2 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial va

34、lue, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1. Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A. Method 10

35、42 of MIL-STD-750, test condition A. 13 Subgroups 2 and 3 of table I herein. IGSSF1= 10 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 10 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 1 A dc or 100 percent of initial value, whichever is greater. rDS(on)1=2

36、0 percent of initial value or 0.5 ohm, whichever is greater. VGS(th)1= 10 percent of initial value or 0.3 V dc. Subgroup 2 of table I herein. IGSSF1= 10 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 10 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 1 A dc

37、or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value or 0.5 ohm, whichever is greater. VGS(th)1= 10 percent of initial value or 0.3 V dc. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IG

38、SSF1, IGSSR1, IDSS1and VGS(th)1shall be invoked. * (3) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-

39、PRF-19500/547D 8 * 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group

40、 E, subgroup 4 herein. * 4.3.2 Gate stress test. Apply VGS= 30 V minimum for t = 250 s minimum. * 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

41、 herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANT

42、X, and JANTXV) of MIL-PRF-19500, and herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Conditions B3 1051 Test condition G. B4 1042 Test condition D; 2,000 cycles. The heat

43、ing cycle shall be 1 minute minimum. VDS= 10 V dc, PT= See 1.4 at TA= +25C 3C. B5 1042 Accelerated steady-state operation life; test condition C; TA= + 25C, - 5C, + 10C, VDS= 10 V min.; IDadjusted to meet a junction temperature of 140C, - 0C, + 10C, t = 240 hours. B5 2037 Bond strength (Al-Au die in

44、terconnects only); test condition D. * 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. * B3 1042 Intermittent operation life, condition D, 2,000 cycles . No heat sink or forced air cooling on the device

45、 shall be permitted during the on cycle; ton= 30 seconds minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/547D 9 * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for s

46、ubgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition E . C5 3161 Thermal resistance, see 4.5.2, RJC(max)= 20C/W. * C6 1042 Intermittent operation l

47、ife, condition D, 6,000 cycles . No heat sink or forced air cooling on the device shall be permitted during the on cycle; ton= 30 seconds minimum. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF

48、-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. The thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(and VHwher