DLA MIL-PRF-19500 566 C-2012 SEMICONDUCTOR DEVICE TRANSISTOR FIELD EFFECT N-CHANNEL SILICON LOGIC LEVEL TYPES 2N6902 AND 2N6904 JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/566C 4 September 2012 SUPERSEDING MIL-PRF-19500/566B w/AMENDMENT 1 16 May 2000 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, LOGIC LEVEL, TYPES 2N6902, AND 2N6904 JAN, JANTX, JANTXV AND JANS This specification is approved for use b

2、y all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for logic level, N-channel, enhancement-m

3、ode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-204AA for types 2N6902 and 2N6904; (formerly TO-3). 1.3 Maximum ratings. (Unless otherwise specified, TA= +25C). Typ

4、e PT(1) TC= +25C PTRJCVDSVDGVGSID1(2) TC= +25C ID2(2) TC= +100C IS(2) TJand TSTGW W C/W V dc V dc V dc A dc A dc A dc C 2N6902 75 4 1.67 100 100 20 12.0 9.6 12.0 -55 2N6904 75 4 1.67 200 200 20 8.0 5.1 8.0 to +150 (1) Derate linearly, 0.6 W/C for TC +25C. (2) Derate above TC= +25C according to the f

5、ormula IP ratedKD=( )where P(rated) = PT- (TC-25) (W/C) watts; K = Max rDS(on)at TJ= + 150max - TCC. AMSC/NA FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semic

6、onductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 December

7、 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/566C 2 1.4 Primary electrical characteristics at TC= +25C. Type IDMMin V(BR)DSSVGS= 0 V ID= 1 mA dc VGS(th)1VDS VGSID= 1.0 mA Max IDSS1VGS= 0 V Max rDS(on)(1) VGS = 5 V dc VDS= 80 V

8、VDS= 160 VTJ= +25C at ID1TJ= +150C at ID22N6902 2N6904 A (pk) 30 20 V dc 100 200 V dc Min 1.0 1.0 V dc Max 2.0 2.0 A dc 1.0 A dc 1.0 0.2 0.6 0.52 1.17 (1) Pulsed (see 4.5.1) 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this speci

9、fication. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requireme

10、nts of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless

11、otherwise specified, the issues of these documents are those cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. * DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copi

12、es of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in t

13、he event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduct

14、ion or networking permitted without license from IHS-,-,-MIL-PRF-19500/566C 3 6* FIGURE 1. Physical dimensions of transistor type TO-204AA. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/566C 4 Dimensions Ltr Inches Millimeter Notes Mi

15、n Max Min Max CD .875 22.23 CH .250 .360 6.35 9.15 3 HR .495 .525 12.57 13.3 HR1.131 .188 3.33 4.78 HT .060 .135 1.52 3.43 LD .038 .043 0.97 1.10 LL .312 .500 7.92 12.70 L1.050 1.27 MHD .151 .161 3.84 4.09 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 3 PS1.205 .225 5.21 5.72 3 s .655 .675 16

16、.64 17.15 NOTES: 1. Dimensions are in inches. * 2. Millimeters are given for general information only. 3. These dimensions shall be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below the seating plane. When gauge is not used, measurement will be made at the seating plane. 4. The se

17、ating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. Mounting holes shall be deburred on

18、 the seating plane side. 6. Drain is electrically connected to the case. * FIGURE 1. Physical dimensions of transistor type TO-204AA - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/566C 5 3. REQUIREMENTS * 3.1 General. The

19、individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufact

20、urers list (QML) before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: IASRated avalanche current, nonrepetitive nC nano Coulomb. 3.4 Interface and physical di

21、mensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 and 2. * 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisiti

22、on document (see 6.2). 3.4.2 Internal construction. Multiple chip construction is not permitted to meet the requirements of this specification. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require el

23、ectrostatic protection. * 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static discharge. The following handling practices are recommended (see 3.6). a. Devices shall be handled on benches with conductive and grounded surface. b. Grou

24、nd test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care shall be exercised during test

25、 and troubleshooting to apply not more than maximum rated voltage to any lead. * h. Gate shall be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/566

26、C 6 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. * 3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I. * 3.9 Workmanship. Se

27、miconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a.

28、 Qualification inspection (see 4.2). b. Screening (see 4.3) * c. Conformance inspection (see 4.4 and table I). * 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E inspection shall be perfor

29、med for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the firs

30、t inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/566C 7 * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500

31、 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of Measurements MIL-PRF-19500) (1) (2) JANS level JANTX and JANTXV (3) Gate stress test (see 4.3.1) G

32、ate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, (see 4.3.2) optional Method 3470 of MIL-STD-750, (see 4.3.2) optional (3) Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance (see 4.5.3) 9 Subgroup 2 of table I herein. IDSS1, IGSSF1, IGS

33、SR1Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1Subgroup 2 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial

34、value, whichever is greater. IDSS1= 2 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein

35、. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 2 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value VGS(th)1= 20 percent of initial value Subgroup

36、2 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 2 A dc or 100 percent of initial value, whichever is greater. rDS(on)1=20 percent of initial value VGS(th)1= 20 percent of initi

37、al value (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a. JANTX and JANTXV levels do not need to be repeated

38、in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/566C 8 4.3.1 Gate stress test. Apply VGS= 15 V minimum for t = 250 s minimum. * 4.3.2 Single pulse unclamped inductive switching. a. Peak current, ID3.0 A. b. Pe

39、ak gate voltage, VGS.10 V. * c. Gate to source resistor, RGS.25 RGS 200. d. Initial case temperature +25C +10, -5C. * e. Inductance 100 H minimum. f. Number of pulses to be applied .1 pulse minimum. g. Supply voltage VDD.50 V. * 4.3.3 Thermal impedance. The thermal impedance measurements shall be pe

40、rformed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. * 4.4 Conformance inspection. Conformance inspection shall be in ac

41、cordance with MIL-PRF-19500, and as specified herein. * 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, table E-V and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. 4.4.

42、2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) and delta requirements shall be in accorda

43、nce with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/566C 9 * 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Conditions * B3 1051 Test condition G * B3 2075 See 3.4.2. B4

44、 1042 Test condition D, 2,000 cycles minimum, the heating cycle shall be 1 minute minimum. * B5 1042 Test condition A; VDS= rated VDS(see 1.3), TA= +175 C, t = 120 hours minimum, read and record VBR(DSS)(pre and post) at ID= 1 mA, read and record IDSS(pre and post), (see table I). * B5 1042 Test con

45、dition B; VGS= rated VGS(see 1.3), TA= +175 C, t = 24 hours minimum. 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions * B2 1051 Test condition G B3 1042 Test condition D; 2,000 cycles minimum. The heating cycle shall be 1 minute minimum. *

46、B4 2075 See 3.4.2. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. End-point electrical and delta measurements shall be in accordance with table I, subgroup 2 herein. Subgroup Method C

47、onditions * C2 2036 Test condition A; weight = 10 lbs., t = 15 s. * C5 3161 See 4.3.3. C6 1042 Test condition D; 6,000 cycles minimum. The heating cycle shall be 1 minute minimum. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgro

48、up testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/566C 10 * TABLE I. Group A inspection. Inspec