DLA MIL-PRF-19500 575 E-2012 SEMICONDUCTOR DEVICE DIODE SILICON HIGH VOLTAGE POWER RECTIFIER FAST RECOVERY TYPES 1N6512 THROUGH 1N6519 1N6512US THROUGH 1N6519US JAN JANTX JANTXV AN.pdf

1、 MIL-PRF-19500/575E 13 August 2012 SUPERSEDING MIL-PRF-19500/575D 13 August 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6512 THROUGH 1N6519, 1N6512US THROUGH 1N6519US, JAN, JANTX, JANTXV, AND JANS This specification

2、is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, high volt

3、age, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 and 2. * 1.3 Maximum ratings. Unless otherwise specified, TA= 25C. Types VRWMIFSMIOtrrTSTGTJRJL1L =.25 inch (6.35 mm) RJL2L =

4、.25 inch (6.35 mm) RJEC (4) tp= 8.3 ms (1) (2) (Air) (Oil bath) (3) V dc A (pk) A dc A dc ns C C C/W C/W C/W 1N6512, US 1,500 100 1.5 1.0 70 -65 to +200 -65 to +175 16 12 4 1N6513, US 2,000 100 1.5 1.0 70 -65 to +200 -65 to +175 16 12 4 1N6514, US 2,500 60 1.0 0.65 70 -65 to +200 -65 to +175 16 12 4

5、 1N6515, US 3,000 60 1.0 0.65 70 -65 to +200 -65 to +175 16 12 4 1N6516, US 4,000 40 0.75 0.5 70 -65 to +200 -65 to +175 16 12 5 1N6517, US 5,000 40 0.75 0.5 70 -65 to +200 -65 to +175 16 12 5 1N6518, US 7,500 25 0.5 0.35 70 -65 to +200 -65 to +175 16 12 5 1N6519, US 10,000 25 0.5 0.35 70 -65 to +20

6、0 -65 to +175 16 12 5 See notes on next page. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change,

7、 you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2012. Provided by IHSNot for ResaleNo reproduction o

8、r networking permitted without license from IHS-,-,-MIL-PRF-19500/575E 2 * 1.3 Maximum ratings - Continued. * (1) Derate linearly for air (+55C TA +100C. IOat TA= +55C to IOat TA= +100C.), for oil bath (+80C TL +100C. IOat TL= +80C to IOat TA= +100C.), and for end cap (+100C TA +125C. IOat TEC= +100

9、C to IOat TEC= +125C.) * (2) Derate linearly for air (+100C TA +175C. IOat TA= +100C to IO = 0 A at TA= +175C), for oil bath (+100C TL +175C. IOat TL= +100C to IO = 0 A at TA= +175C), and for end cap (+125C TA +175C. IOat TEC= +125C to IO = 0 A at TA= +175C). * (3) Oil or fluorocarbon fluid with lea

10、ds heat sunk at specified L. (4) RJEC is junction to end-cap thermal impedance with “US“ suffix identification, i.e., 1N6512US. Surface mount types, see figure 3. 1.4 Primary electrical characteristics. Types VRWMIOTA= +55C IR1 TA= +25C VF1 at IOC at VR= 50 V FO= 1 kHz V dc A dc A dc V (pk) pF 1N651

11、2, 1N6512US 1,500 1.5 1.0 3.5 25 1N6513, 1N6513US 2,000 1.5 1.0 3.5 25 1N6514, 1N6514US 2,500 1.0 1.0 6.0 20 1N6515, 1N6515US 3,000 1.0 1.0 6.0 20 1N6516, 1N6516US 4,000 0.75 1.0 8.0 16 1N6517, 1N6517US 5,000 0.75 1.0 8.0 16 1N6518, 1N6518US 7,500 0.5 1.0 13.0 8 1N6519, 1N6519US 10,000 0.5 1.0 13.0

12、8 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/575E 3 Dimensions PIN BL LL LD BD Inches Millimeters Inches Millimeters Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max 1N6512 .25 .

13、31 6.35 7.87 1.0 1.3 25.4 33.0 .037 .043 0.94 1.09 .155 .215 3.94 5.46 1N6513 .25 .31 6.35 7.87 1.0 1.3 25.4 33.0 .037 .043 0.94 1.09 .155 .215 3.94 5.46 1N6514 .27 .33 6.86 8.38 1.0 1.3 25.4 33.0 .037 .043 0.94 1.09 .155 .215 3.94 5.46 1N6515 .27 .33 6.86 8.38 1.0 1.3 25.4 33.0 .037 .043 0.94 1.09

14、.155 .215 3.94 5.46 1N6516 .29 .35 7.37 8.9 1.0 1.3 25.4 33.0 .037 .043 0.94 1.09 .155 .215 3.94 5.46 1N6517 .29 .35 7.37 8.9 1.0 1.3 25.4 33.0 .037 .043 0.94 1.09 .155 .215 3.94 5.46 1N6518 .34 .40 8.64 10.2 1.0 1.3 25.4 33.0 .037 .043 0.94 1.09 .155 .215 3.94 5.46 1N6519 .34 .40 8.64 10.2 1.0 1.3

15、25.4 33.0 .037 .043 0.94 1.09 .155 .215 3.94 5.46 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The specified lead diameter applies in the zone between .05 inch (1.27 mm) from the body to the end of the lead. Outside of this zone lead shall not exceed

16、the body diameter. 4. Dimension LU defines region of uncontrolled diameter .050 inch max (1.27 mm). 5. In accordance with ASME Y14.5M, diameters are equivalent to X symbology. FIGURE 1. Physical dimensions (for non-US suffix devices only). Provided by IHSNot for ResaleNo reproduction or networking p

17、ermitted without license from IHS-,-,-MIL-PRF-19500/575E 4 Dimensions PIN L A B Inches Millimeters Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max Min Max Min Max 1N6512US .225 .245 5.72 6.22 .026 .036 0.66 0.91 .170 .180 4.32 4.57 1N6513US .225 .245 5.72 6.22 .026 .036 0.66 0.

18、91 .170 .180 4.32 4.57 1N6514US .245 .265 6.22 6.73 .026 .036 0.66 0.91 .170 .180 4.32 4.57 1N6515US .245 .265 6.22 6.73 .026 .036 0.66 0.91 .170 .180 4.32 4.57 1N6516US .265 .285 6.73 7.24 .026 .036 0.66 0.91 .170 .180 4.32 4.57 1N6517US .265 .285 6.73 7.24 .026 .036 0.66 0.91 .170 .180 4.32 4.57 1

19、N6518US .325 .345 8.26 8.76 .026 .036 0.66 0.91 .170 .180 4.32 4.57 1N6519US .325 .345 8.26 8.76 .026 .036 0.66 0.91 .170 .180 4.32 4.57 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are pre-solder dip. 4. In accordance with ASME Y14.5M, dia

20、meters are equivalent to X symbology. FIGURE 2. Physical dimensions (surface mount devices). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/575E 5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified

21、in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that th

22、ey must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to th

23、e extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for

24、Semiconductor Devices. MIL-STD-1276 - Leads for Electronic Component Parts * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5

25、094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unl

26、ess a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized

27、by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dim

28、ensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (axial leads) and 2 (square end surface mount) herein. Plastic packages are prohibited. 3.4.1 Lead material and finish. Lead material shall be type C, 99.9 percent silver or copper in accordance with

29、MIL-STD-1276. Lead finish shall be in accordance with MIL-PRF-19500 and MIL-STD-750. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. These devices shall be constructed in a manner and using materials which enable the di

30、odes to meet the applicable requirements of MIL-PRF-19500 and this document. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/575E 6 3.4.2.1 Surface mount. The surface mount (US) version shall be considered structurally identical to the

31、non-surface mount version except for lead attach. 3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500. Manufacturers identification and date code shall be marked on the devices. The polarity shall be indicated with a contrasting color band to denote the cathode end. The prefixes JAN,

32、JANTX, and JANTXV may be abbreviated as J, JX, JV and JS, respectively. The part number may be reduced to J6512, JX6512, JV6512 or JS6512. No color coding will be permitted for part numbering. 3.5.1 Marking for surface mount (US) devices. For US version devices only, all marking, except polarity may

33、 be omitted from the body, but shall be retained on the initial container. Polarity marking of US devices shall consist of, as a minimum, a band or three contrasting dots spaced equally around the periphery of the cathode. Initial container package marking will be in accordance with MIL-PRF-19500. 3

34、.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. * 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semicondu

35、ctor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualif

36、ication inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500 and herein. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.

37、2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein shall

38、be performed on the first inspection lot to this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/575E 7 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table

39、 E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E, Measurement table E-IV of MIL-PRF-19500) JANS JANTX and JANTXV levels 3c Therm

40、al impedance (see 4.3.3) Thermal impedance (see 4.3.3) (1) Surge, see 4.3.2 Surge, see 4.3.2 7a and 7b Optional Optional 9 IR1and VF1Not applicable 11 IR1and VF1; IR1and VF1, see table II herein IR1and VF112 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein: IR1and VF1, see table II herein.

41、 IR1and VF1Subgroup 2 of table I herein; IR1, VF1see table II herein. IR1and VF114a and 14b Required Required (1) Surge screening shall be performed anytime after screen 3a of MIL-PRF-19500 and before screen 10. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1038 of

42、MIL-STD-750, condition B, TA= room ambient as defined in the general requirements in 4.5 of MIL-STD-750, VRWM= 1,000; f 60 Hz. Types IO(A dc) Types IO(A dc) 1N6512, 1N6512US 1N6513, 1N6513US 1.5 1N6516, 1N6516US 1N6517, 1N6517US 0.75 1N6514, 1N6514US 1N6515, 1N6515US 1.0 1N6518, 1N6518US 1N6519, 1N6

43、519US 0.5 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/575E 8 4.3.2 Surge screening. Method 4066 of MIL-STD-750; TA= +25C, VRWM= 0. Six surges. Apply 20 x IOrated at TA= 55C, 8.3 ms. * 4.3.3 Thermal impedance. The thermal impedance m

44、easurements shall be performed in accordance with method 3101 or 4081, as applicable, of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See figure 3 and table II, group E, subgroup 4 herein. 4.4 Con

45、formance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with t

46、he conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.4.2.1 Group B inspection, table

47、E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 4066 IOat TA= 55C, IFSM= rated IFSM, see 1.3, one surge, 8.3 ms, VRWM= 0 V. B4 1037 See 4.3.1, ton= toff= 3 minutes minimum, 2,000 cycles. B5 1027 TA= +150C minimum, IO= rated IO(see 1.3) or adjust IOand TAas required to achieve TJ= +275C f

48、or a minimum of 96 hours at VRWM= 1,000 V. * B6 4081 TA= +25C; RJL1= rated RJL1(see 1.3); RJL2= rated RJL2(see 1.3); RJEC= rated RJEC(see 1.3). 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV of MIL-PRF-19500). Subgroup Method Condition B2 4066 IO= IOat TA= 55C one surge, 8.3 ms; IFSM= rated IFSM(see 1.3), VRWM= 0 V. B3 1027 TA= room ambient as defined in the general requirements in 4.5 of MIL-STD-750 minimum, IO= rated IO(see 4.3.1); adjust IOor TAas required to achieve TJ +125C, VRWM= 1,000 V. * B5 4081 TA= +25C; RJL1= rated RJL