DLA MIL-PRF-19500 583 B-2010 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON AMPLIFIER TYPES 2N5681 AND 2N5682 JAN JANTX AND JANTXV.pdf

1、 MIL-PRF-19500/583B 22 July 2010 SUPERSEDING MIL-PRF-19500/583A 21 August 1999 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER, TYPES 2N5681 AND 2N5682, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Dep

2、artment of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN , silicon, amplifier transistor. Three levels of product assurance are pro

3、vided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, (TO-39). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PTTA= +25C (1) PTTC= +25C (2) RJC VCBOVCEOVEBOICIBTopand TSTG2N5681 2N5682 W 1.0 1.0 W 10 10 C 17.5 17.5 V dc 100 120 V dc 100 120

4、 V dc 4.0 4.0 A dc 1.0 1.0 A dc 0.5 0.5 C -65 to +200 (1) Derate linearly 5.7 mW/C for TA +25C. (2) Derate linearly 57 mW/C for TC +25C. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Bo

5、x 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary

6、 to comply with this revision shall be completed by 22 October 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/583B 2 1.4 Primary electrical characteristics at TA= +25C. Limits hFEat VCE = 2.0 V dc 1/ /hfe/ f = 10 MHz Cobof = 1.0

7、MHz VCE(sat)1 (1) IC = 250 mA dc VBE(sat)1 1/ IC = 250 mA dc hFE1 IC= 250 mA dc hFE2 IC= 500 mA dc hFE3 IC= 1.0 A dc VCE = 10 V dc IC = 100 mA dc VCB = 20 V dc IE = 0 IB = 25 mA dc IB = 25 mA dc Min Max 40 150 20 5 3.0 pF 50 V dc 0.6 V dc 1.1 (1) Pulsed see 4.5.1. 2. APPLICABLE DOCUMENTS * 2.1 Gener

8、al. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the complete

9、ness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, st

10、andards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. * DE

11、PARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelph

12、ia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and

13、 regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/583B 3 FIGURE 1. Physical dimensions for (TO-39). Provided by IHSNot for ResaleNo reproduction or networking permitted without l

14、icense from IHS-,-,-MIL-PRF-19500/583B 4 FIGURE 1. Physical dimensions for (TO-39) continued. Symbol Dimensions Notes (see note 3) Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.39 LC .200 BSC 5.08 BSC 10 LD .016 .021 0.41 0.53 10, 11 LL .500 .75

15、0 12.70 19.05 11, 12 LU .016 .019 0.41 0.48 11, 12 L1.050 1.27 11, 12 L2.250 6.35 11, 12 P .100 2.54 9 Q .050 1.27 8 R .010 0.25 13 TL .029 .045 0.74 1.14 7 TW .028 .034 0.72 0.86 6 45 BSC 10 Term 1 Emitter Term 2 Base Term 3 Collector Provided by IHSNot for ResaleNo reproduction or networking permi

16、tted without license from IHS-,-,-MIL-PRF-19500/583B 5 NOTES: 1. Dimensions are in inches. * 2. Millimeters are given for general information only. 3. Refer to applicable symbol list. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 5. Lead number 1 is the emitter, lead nu

17、mber 2 is the base, lead number 4 is omitted from this outline. The collector is number 3 and is electrically connected to the case. 6. Beyond r (radius) max, TW shall be held for a minimum length of .011 inch (0.28 mm). 7. TL measured from maximum HD. 8. Outline in this zone is not controlled. 9. C

18、D shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling 10. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) rela

19、tive to tab at MMC. 11. LU applies between L1and L2. LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 12. All three leads. 13 r (radius) applies to both inside corners of tab. FIGURE 1. Physical dimensions for (TO-39) continued. Provided by IHSNot for ResaleN

20、o reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/583B 6 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualification. Devices furnished under this specification shall be products th

21、at are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified

22、 in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (TO-39) herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Wh

23、ere a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specif

24、ied in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that

25、 will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) * c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qu

26、alification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E inspection. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification s

27、heet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking pe

28、rmitted without license from IHS-,-,-MIL-PRF-19500/583B 7 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limi

29、ts of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANTX and JANTXV level (1) Method 3131 (see 4.3.2) 11 ICBO, and hFE212 See 4.3.1 13 Subgroup 2 of table I herein; ICBO= 100 percent of initial value, or 10 nA dc whichever is greater; hFE2= 15percent o

30、f initial value. (1) Shall be performed anytime before screen 10. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB 20 V dc; PT= 1.0 W at TA= 30C 5C. NOTE: No heat sink or forced air cooling on the devices shall be permitted. * 4.3.2 Thermal impedance. The thermal impedanc

31、e measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance

32、inspection shall be in accordance with MIL-PRF-19500, and as specified herein. Alternate flow is allowed for quality conformance inspection in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table I herein. Provided by IHSNot for Resa

33、leNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/583B 8 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified. Separate samples may be used for each step. In the event of a group B failure, the manufacturer may

34、 pull a new sample at double the sample size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Electrical measurements (end-points) shall be in accordance with table I, s

35、ubgroup 2 herein. Delta measurements shall be in accordance with table II herein. Step Method Condition 1 1027 Steady-state life: 340 hours, VCB 20 V dc, TJ= 150C minimum. External heating of the device under test to achieve TJ= 150C minimum is allowed provided that a minimum of 75 percent of rated

36、power is dissipated. No heat sink or forced-air cooling on the devices shall be permitted. n = 45 devices, c = 0. 2 1026 The steady state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production, howe

37、ver, Group B shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), TA= +200C. n = 22, c = 0. 4.4.2.1 Group B sample selection. Samples selected for group B inspection shall meet all of the following requirements: a. For JAN, JANTX

38、, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. b. Shall be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any

39、 plating prone to oxidation at high temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testin

40、g in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.4.3.1 Group C inspection, table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition

41、 C2 2036 Test condition E. * C5 3131 Thermal resistance, see 4.3.2, RJC= 17.5C/W. C6 Not applicable. 4.4.3.2 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot containing the intended package type and lead finish procured to the same specification which

42、 is submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. Provided by IHSNot for ResaleNo reproduction or networking permitted

43、without license from IHS-,-,-MIL-PRF-19500/583B 9 * 4.4.4 Group E inspection. Group E inspection for qualification only shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and table III herein. Electrical measurements (end-points) shall

44、be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as sp

45、ecified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/583B 10 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 2/ Visual and mechanical 3/ ex

46、amination 2071 n = 45 devices, c = 0 Solderability 3/ 2026 n = 15 leads, c = 0 Resistance to 3/ 4/ solvent 1022 n = 15 devices, c = 0 Temp cycling 3/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal Fine leak Gross leak 1071 n = 22 devices, c = 0 Electrical measurements Group A,

47、 subgroup 2 Bond strength 3/ 2037 Pre-condition TA= +250C at t = 24 hrs or TA= +300C at t = 2 hrs, n = 11 wires, c = 0 Subgroup 2 Breakdown voltage collector to emitter 2N5681 2N5682 3011 Bias condition D, pulsed (see 4.5.1) IC= 10 mA dc V(BR)CEO 100 120 V dc Collector emitter cutoff current 2N5681

48、2N5682 3041 Bias condition A, VBE = 1.5 V dc VCE = 100 V dc VCE = 120 V dc ICEX1 100 nA dc Collector emitter cutoff current 2N5681 2N5682 3041 Bias condition D VCE = 70 V dc VCE = 80 V dc ICEO 10 A dc Collector to baser cutoff current 2N5681 2N5682 3036 Bias condition D VCE = 100 V dc VCE = 120 V dc ICBO 100 nA dc Emitter to base cutoff current 3061 Bias condition D, VEB = 4.0 V dc IEBO 1.0 A dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/583B 11 * TABLE I. Grou