DLA MIL-PRF-19500 586 K-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY BARRIER HERMETIC TYPES 1N5817-1 1N5817UR-1 1N5819-1 1N5819UR-1 1N6761-1 AND 1N6761UR-1 JAN JANTX JANTXV JAN.pdf

1、MIL-PRF-19500/586K 22 April 2011 SUPERSEDING MIL-PRF-19500/586J 5 January 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5817-1, 1N5817UR-1, 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC Th

2、is specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for s

3、ilicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance are provided for unencapsulated devices. 1.2 Physical dimensions. See figure 1 (DO-41), figure 2 (DO-213AB), and figure

4、 3 (JANC die) dimensions. * 1.3 Maximum ratings. TA= +25C (unless otherwise specified). Types VRWM(1) IO(PCB)TA= 55C (2) IFSMTSTGTJ(3) RJLL = .375 inch (9.53 mm) Max RJEC (2)Max RJAV (pk) A dc A dc C C C/W C/W 1N5817-1 20 1.0 25 -65 to +150 -65 to +125 70 220 1N5817UR-1 20 1.0 25 40 220 1N5819-1 45

5、1.0 25 -65 to +125 70 220 1N5819UR-1 45 1.0 25 40 220 1N6761-1 100 1.0 25 -65 to +150 70 220 1N6761UR-1 100 1.0 25 40 220 (1) See figures 4, 5, 6, and 7 for derating curves and for effects of VRon TJ. TA= +75C for both axial and metal electrode leadless face diodes (MELF) (UR) on printed circuit boa

6、rd (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air, pads for (UR) = .061 inch (1.55 mm) x .105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4 mm) long, lead length L .187 inch ( 4.75 mm); RJAwith a defined P

7、CB thermal resistance condition included, is measured at IO= 1A. (2) For thermal impedance see figures 8 and 9. (3) The maximum TJdepends on the voltage applied. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VA

8、C, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . Provided by IHSNot for ResaleNo reproduction or netwo

9、rking permitted without license from IHS-,-,-MIL-PRF-19500/586K 2 * 1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at TA= +25C. Types Max VF1IF= 0.1 A Max VF2IF = 1.0 A Max VF3IF= 3.1 A Max IRM VRWMpulsed method (see 4.5.1) Max CTVR= 5 V dc TJ=

10、 +25C IRM1TJ= +100C IRM2V (pk) V (pk) V (pk) A mA pF 1N5817-1 .32 .45 .65 50 5.0 110 1N5817UR-1 .32 .45 .65 50 5.0 110 1N5819-1 .34 .49 .80 50 5.0 70 1N5819UR-1 .34 .49 .80 50 5.0 70 1N6761-1 .38 .69 NA 100 12.0 70 1N6761UR-1 .38 .69 NA 100 12.0 70 2. APPLICABLE DOCUMENTS 2.1 General. The documents

11、listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list,

12、 document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handboo

13、ks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STAN

14、DARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 O

15、rder of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a speci

16、fic exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qual

17、ifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or

18、 networking permitted without license from IHS-,-,-MIL-PRF-19500/586K 3 Symbol Dimensions Notes Inches Millimeters Min Max Min Max BD .080 .107 2.03 2.72 3 BL .160 .205 4.06 5.21 3 LD .028 .034 0.71 0.86 LL 1.000 25.40 LL1.050 1.27 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for g

19、eneral information only. 3. Package contour optional within cylinder of diameter BD and length BL. Slugs, if any, shall not be included within this cylinder, but shall not be subject to the minimum limit of BD. 4. Lead diameter not controlled in this zone to allow for flash, lead finish build-up, an

20、d minor irregularities other than slugs. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Types 1N5817-1, 1N5819-1 and 1N6761-1 * FIGURE 1. Physical dimensions (DO-41). DO-41 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

21、MIL-PRF-19500/586K 4 Symbol Dimensions Inches Millimeters Min Max Min Max BD .094 .105 2.39 2.67 BL .189 .205 4.80 5.21 ECT .016 .022 0.41 0.56 S .001 0.03 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equi

22、valent to x symbology. Types 1N5817UR-1, 1N5819UR-1, and 1N6761UR-1 * FIGURE 2. Physical dimensions (DO-213AB). DO-213AB UR Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/586K 5 Symbol Dimensions Inches Millimeters Min Max Min Max A .0

23、35 .039 0.89 0.99 B .031 .033 0.79 0.84 Design data Metallization: Top: (Anode) Al Back: (Cathode) . Au Al thickness . 25,000 min Gold thickness . 4,000 min Chip thickness . 10 Mils 2 Mils FIGURE 3. JANC (A-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted

24、 without license from IHS-,-,-MIL-PRF-19500/586K 6 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1, 2, and 3. 3.4.1 Lead material and finish. Lead material shall be copper clad steel with a minimum of 50 percent copper

25、 by weight. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. All devices shall be metallurgically bonded, double plug constructio

26、n in accordance with the requirements of MIL-PRF-19500. All glass diodes shall be designed with sufficient thermal compensation in the axial direction to optimize tensile and compressive stresses. Dimensional analysis is required of all materials used to achieve axial thermal compensation. Dimension

27、al tolerances and corresponding coefficient of thermal expansion (CTE) shall be documented on the DSCC Design and Construction Form 36D and shall be approved by the qualifying activity to maintain qualification. Dimensional tolerances shall be sufficiently tight enough to prevent excessive stresses

28、due to the inherent CTE mismatch. The UR version shall be structurally identical to the non-UR versions except for end-cap lead attachment. * 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. Manufacturers identification and date code shall be marked on the devices. Initial container p

29、ackage marking shall be in accordance with MIL-PRF-19500. The polarity shall be indicated with a contrasting color band to denote the cathode end. The prefixes JAN, JANTX, JANTXV, and JANS may be abbreviated as J, JX, JV, and JS respectively. Manufacturers identification and date code shall be marke

30、d on the devices. The part number may be reduced to J5817, JX5817, JV5817, or JS5817. Color coding shall not be permitted for part numbering. 3.5.1 UR devices. For UR version devices only, all marking, except polarity may be omitted from the body, but shall be retained on the initial container. Pola

31、rity marking of UR devices shall consist as a minimum, a band or three contrasting dots around the periphery of the cathode. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electr

32、ical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIF

33、ICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be i

34、n accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not require the performance of table II te

35、sts, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/586K 7

36、4.2.2 JANHC and JANKC devices. Qualification for devices shall be in accordance with MIL-PRF-19500. This testing may be performed on a TO-5 package in lieu of the DO-41 axial leaded package. * 4.3 Screening (JAN, JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table E-IV

37、of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTXV and JANTX level 2 Not required Not r

38、equired 3b (1) 3c Not applicable Required (see 4.3.3) Not applicable Required (see 4.3.3) 4, 5, and 6 Not applicable Not applicable 9 IR1and VF2Not applicable (2) 10 TA= +110C; VRWM= 20 V(pk), 1N5817, TA= +110C; VRWM= 45 V(pk), 1N5819, TA= +100C; VRWM= 100 V(pk), 1N6761, IO= 0, VR= VRWMTA= +110C; VR

39、WM= 20 V(pk), 1N5817, TA= +110C; VRWM= 45 V(pk), 1N5819, TA= +100C; VRWM= 100 V(pk), 1N6761, IO= 0, VR= VRWM11 IR1 100 percent of initial reading or .02 mA, whichever is greater. VF2 50 mV dc IR1and VF212 See 4.3.2 t = 48 hours. See 4.3.2 13 Subgroup 2 of table I herein; IR1 100 percent of initial r

40、eading or .02 mA, whichever is greater; VF2 50 mV dc Subgroup 2 of table I herein; IR1 100 percent of initial reading or .02 mA, whichever is greater; VF2 50 mV dc (1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with table E-IV

41、of MIL-PRF-19500, screen 3 prior to this thermal test. (2) Junction temperature (TJ) is not to exceed 115C at VRWM. TJis affected by the device mounting thermal resistance when parasitic power is generated by the temperature dependent leakage current. Until this leakage becomes significant near ther

42、mal runaway, TJremains approximately equal to TAor TJfor IO= 0. 4.3.1 Screening (JANHC or JANKC). Screening of die shall be in accordance with “Discrete Semiconductor Die/Chip Lot Acceptance” appendix G of MIL-PRF-19500 and die shall be 100-percent probed in accordance with table I, subgroup 2. 4.3.

43、1.1 JAN testing. JAN level product will have temperature cycling and thermal impedance testing performed in accordance with MIL-PRF-19500, JANTX level screening level requirements. 4.3.2 Burn-in conditions. Burn-in conditions are as follows: IF= 1.0 A dc (min), adjust IFor TAto achieve TJ= 100C min.

44、 Mounting and test conditions shall be in accordance with method 1038 of MIL-STD-750, test condition B. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH,

45、 tSW. Measurement delay time (tMD) = 70 s max. See group E, subgroup 4 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/586K 8 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Gr

46、oup A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS), and table E-VIb (JAN, JAN

47、TX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1056 0C to 100C, 25 cycles, n = 22, c = 0. B3 105

48、1 -55C to 150C, 100 cycles, n = 22, c = 0. B3 4066 IFSM= 25 A(pk), condition A, IO= 1.0 A; TA= room ambient as defined in the general requirements of MIL-STD-750; 5 surges of 8.3 ms each at 1 minute intervals. B3 2101 Decap analysis; scribe and break only. B3 2075 In accordance with 4.5.3. B4 1037 I

49、F= 1.0 A; TA= room ambient as defined in the general requirements of MIL-STD-750; ton= toff= 3 minutes minimum for 2,000 cycles. B5 1026 IF= 1 A dc (minimum), adjust IFor TAto achieve TJ= 125C (minimum). B6 4081 See 4.3.3; RJLand RJEConly. 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV of MIL-PRF-