DLA MIL-PRF-19500 617 D-2009 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER DUAL COMMON CATHODE OR ANODE CENTER TAP ULTRAFAST TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N.pdf

1、 MIL-PRF-19500/617D 17 April 2009 The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 July 2009. INCH-POUNDSUPERSEDING MIL-PRF-19500/617C 3 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

2、 DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein

3、 shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon, dual high voltage, ultra-fast power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-195

4、00. 1.2 Physical dimensions. See figure 1 (TO-254AA isolated). 1.3 Maximum ratings. (for each leg). Types VRWMID= 0.2 mA dc IFSM(1) tP= 8.3 ms IFTC= 100C (1) (2) (3) trr(1) RJC(1) RJA(1) TSTGand TJ1N6672, 1N6672R 1N6673, 1N6673R 1N6674, 1N6674R V dc 300 400 500 A (pk) 150 A dc 15 ns 35 C/W 2.0 C/W 4

5、0 C -65 to +200 (1) Each individual diode. (2) Derate linearly at 150 mA/C from +100C to +150C. (3) Total package current is limited to 30 A dc. Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43

6、218-3990, or emailed to Semiconductordscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil. AMSC N/A FSC 5961 Provided by IHSNot for ResaleNo reproduction or networking permit

7、ted without license from IHS-,-,-MIL-PRF-19500/617D 2 Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .530 .550 13.46 13.97 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790

8、.800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 SCHEMATIC 1N6672, 1N6673, 1N6674 TERM 1 = ANODE 1 |O2 TERM 2 = CATHODE | TERM 3 = ANODE 2 3 O 1N6672R, 1N6673R, 1N6674R TERM 1 = CATHODE 1 TERM 2 = ANODE TERM 3 = CATHODE 2 NOTES: 1. Dimensions are in inches. 2. Millimeters given for g

9、eneral information only. 3. All terminals are isolated from case. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration (TO-254AA). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-1

10、9500/617D 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While ever

11、y effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and

12、handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor

13、 Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil. or from the Standardization Document Order Desk, 700 Robb

14、ins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, howe

15、ver, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products

16、that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specifi

17、ed in MIL-PRF-19500: 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 (TO-254AA) herein. Methods used for electrical isolation of the terminal feed through shall employ materials that contain a minimum of 90 percent AL2O

18、3(ceramic). Examples of such construction techniques are metalized ceramic eyelets or ceramic walled packages. The US Governments preferred system of measurement is the metric SI system. However, since this item was originally designed using inch-pound units of measurement, in the event of conflict

19、between the metric and inch-pound units, the inch-pound units shall take precedence. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/617D 4 3.4.1 Lead formation and finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MI

20、L-STD-750, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition requirements (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14, of MIL-PRF-19500. 3.5 Electr

21、ical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Marking. Devices sha

22、ll be marked as specified in MIL-PRF-19500. 3.7.2 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect li

23、fe, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualificatio

24、n inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the per

25、formance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-

26、,-MIL-PRF-19500/617D 5 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I her

27、ein shall not be acceptable. Screen (see appendix E, Measurement table E-IV of MIL-PRF-19500) JANS level JANTX and JANTXV levels 3b (1) 3c Surge (see 4.3.1) Thermal impedance (see 4.3.2) Surge (see 4.3.1) Thermal impedance (see 4.3.2) 9 VF1and IR1Not applicable 10 Method 1038 of MIL-STD-750, test co

28、ndition A; t = 48 hrs: VR = 80 percent of rated VR.Not applicable 11 VF1and IR1; VF1= 0.1 V (pk); IR1= 10 A dc or 100 percent from the initial value, whichever is greater. VF1and IR112 Method 1038 of MIL-STD-750, test condition B; t = 240 hours (see 4.3.3) Method 1038 of MIL-STD-750, test condition

29、A; t = 48 hours, VR= 80 percent of rated VR13 Subgroup 2 of table I herein; VF1and IR1; VF1= 0.1 V (pk); IR1= 10 A dc or 100 percent from the initial value, whichever is greater. Subgroup 2 of table I herein; VF1and IR1; VF1= 0.1 V (pk); IR1= 10 A dc or 100 percent from the initial value, whichever

30、is greater. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Surge current. Surge current, method 4066 of MIL-STD-750. IO= 0; VRM(w) = 0; IFSM= see 1.3; six surges; TA= 25C, tp= 8.3 ms, one minute minimum time betw

31、een surges. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081, as applicable, of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). See table II, group E, subgroup 4 herein. 4

32、.3.3 Burn-in conditions. Burn-in conditions are as follows: TA= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5). VR= rated. Adjust IOor IFto achieve TJ= 150C minimum. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Grou

33、p A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/617D 6 4.4.2 Group B inspection. Group B inspection shall be conducted in accord

34、ance with the conditions of appendix E, tables E-VIa (JANS) and E-VIb (JANTX and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. See table III herein for delta limits when applicable. * 4.4.2.1 Group B inspection, appendix E, tab

35、le E-VIa (JANS of MIL-PRF-19500). Subgroup Method Condition B4 1037 TA= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5).IFor IO= 1.25 to 10 A. Minimum for 2,000 cycles. B5 1027 For irradiated devices, include trras an end-point measurement. * 4.4.2.2 Group B inspection,

36、appendix E, table E-VIb (JANTX and JANTXV of MIL-PRF-19500). Subgroup Method Condition B3 1037 TA= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5). IFor IO= 1.25 to 10 A. minimum for 2,000 cycles. For irradiated devices, include trras an end-point measurement. 4.4.3 Grou

37、p C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. See table III herein for delta limits when

38、applicable. * 4.4.3.1 Group C inspection, appendix E,table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition A, weight = 10 pounds, t = 15 seconds. C5 4081 RJC= 2.0C/W. C6 1037 TA= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5). IFor IO= 1.25 to 1

39、0 A for 6,000 cycles. For irradiated devices, include trras an end-point measurement. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-IX of MIL-PRF-19500, and table II herein. Electrical measureme

40、nts (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measur

41、ement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/617D 7 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and me

42、chanical examination 2071 Subgroup 2 Thermal impedance 3101 See 4.3.2 ZJXC/W Breakdown voltage 4022 IR= 500 A dc pulsed (see 4.5.1) 1N6672, 1N6672R 1N6673, 1N6673R 1N6674, 1N6674R VBR300 400 500 V dc V dc V dc Forward voltage 4011 IF= 10 A (pk); pulsed (see 4.5.1) IF= 20 A (pk); pulsed (see 4.5.1) V

43、F1VF21.35 1.55 V dc V dc Reverse current leakage 4016 DC method; VR= 80 percent rated VR(see 1.3); pulsed (see 4.5.1) IR150 A dc Subgroup 3 High temperature operation: TC= +100C Reverse current leakage 4016 DC method VR= 80 percent rated VR(see 1.3); pulsed (see 4.5.1) IR25 mA dc Low temperature ope

44、ration: TA= -65C Forward voltage 4011 IF= 10 A (pk); pulsed (see 4.5.1) VF31.45 V dc Subgroup 4 Scope display evaluation 2/ Reverse recovery time 4031 Condition B; IF= .5A, IR= 1A, IRR= .25A trr35 ns Junction capacitance 4001 VR= 10 V dc, f = 1 MHz, VSIG= 50 mV (p-p) (max) CJ150 pF See footnotes at

45、end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/617D 8 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 5 Not applicable Subgroup 6 Surge 4066 Mountin

46、g conditions in accordance with test method 1026 of MIL-STD-750, TA= +25C, IFSM= (see 1.3), IO = 0; VRM(w)= 0; six surges; TA= 25C, tp = 8.3 ms, one minute minimum time between surges. Electrical measurements See table I, subgroup 2 herein, with the exception of ZJX. Subgroup 7 Not applicable 1/ For

47、 sampling plan, see MIL-PRF-19500. 2/ The reverse breakdown characteristics shall be viewed on an oscilloscope with display calibration factors of 50 to 100 A/division and 50 to 100 V/division. Reverse current over the knee shall be at least 500 A. Each device may exhibit a slightly rounded characte

48、ristic and any discontinuity or dynamic instability of the trace shall be cause for rejection. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/617D 9 * TABLE II. Group E inspection (all quality levels) for qualification and requalificat

49、ion only. Inspection MIL-STD-750 Sampling Method Conditions plan Subgroup 1 22 devices c = 0 Temperature cycling 1051 500 cycles, -65C to +175C. Hermetic seal 1071 Electrical measurements See table I, subgroup 2 and table III, steps 1 and 2. For irradiated devices, include trras an end-point measurement