DLA MIL-PRF-19500 623 C-2009 SEMICONDUCTOR DEVICE DARLINGTON TRANSISTOR PNP SILICON HIGH-POWER TYPE 2N7371 JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/623C 17 May 2009 SUPERSEDING MIL-PRF-19500/623B 15 December 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N7371 JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the

2、 Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon, high-power Darlington transistor. Four levels of product assura

3、nce are provided as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO - 254AA). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT(1) TC= +25C VCBOVCEOVEBOIBICTJand TSTGRJC(2) 2N7371 W 100 V dc 100 V dc 100 V dc 5.0 A dc 0.2 A dc 12 C -65 to +200 C/W 1.5 (1) See f

4、igure 2 for temperature-power derating curves. (2) See figure 3, transient thermal impedance graph. 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. hFE1(1) VBE(SAT)(1) VCE(SAT)(1) |hfe| Limit VCE= 3.0 V dc IC= 6.0 A dc IC= 12.0 A dc IB= 120 mA dc IC= 12.0 A dc IB= 120 m

5、A dc VCE= 3.0 V dc IC= 5.0 A dc f = 1 MHz Min Max 1,000 18,000 V dc 4.0 V dc 3.0 10 250 (1) Pulsed see 4.5.1. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-39

6、90, or emailed to semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document

7、shall be completed by 17 August 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/623C 2NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. In accord

8、ance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Dimensions and configuration (T0-254AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.94 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81

9、 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Base Term 2 Collector Term 3 Emitter Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/623C 32. APPLICA

10、BLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made

11、 to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The followi

12、ng specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Spec

13、ification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

14、 Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicab

15、le laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by

16、 a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Int

17、erface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent ceramic AL2O3or equivalent. Examples of such co

18、nstruction techniques are metallized ceramic eyelets or ceramic walled packages. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition requirements

19、(see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with table E-IV, screen 14, of MIL-PRF-19500. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as s

20、pecified in 1.3, 1.4, and table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/623C 43.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance wi

21、th MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified

22、 herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.4 and tables I and II.). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qual

23、ification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the

24、prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in acco

25、rdance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of Measurement MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 9 ICEX1and hFE1 Not applicable 11 Subgroup

26、2 of table I herein; ICEX1and hFE1; ICEX1= 100 percent of initial value or 2 A dc, whichever is greater. hFE1= 40 percent of initial value. ICEX1and hFE112 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ICEX1and hFE1; ICEX1= 100 percent of initial value or 2 A dc, whichever is greater.

27、hFE1= 40 percent of initial value. Subgroup 2 of table I herein; ICEX1and hFE1; ICEX1= 100 percent of initial value or 2 A dc, whichever is greater. hFE1= 40 percent of initial value. * (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening

28、 requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/623C 54.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ= +175C min, VCE= 10-30 V dc, TA= +30 5C. 4.3.2 Thermal impedance (ZJXmeasurements). The ZJX

29、measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD(and VCwhere appropriate). The ZJXlimit used in screen 3c shall comply with the thermal impedance graph on figure 3 (less than or equal to the curve va

30、lue at the same tHtime) and/or shall be less than the process determined statistical maximum limit as outlined in method 3131. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be c

31、onducted in accordance with appendix E, table V of MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS) and table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and

32、herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.2.1 Group B inspection (JANS), table E-VIa of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB 10 V dc. B5 1027 Bond strength, test condition A. B6 3131 See 4.5.2. 4.4.2.2 Group B inspectio

33、n, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B3 1037 VCB 10 V dc, 2,000 cycles. B5 3131 See 4.5.2. B6 1032 TA= +200C. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the test and conditions specified for subgroup testing in

34、 table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 1056 Test condition B. C2 2036 Test condition A, weight = 4.5 kg, t = 10 seconds. C6 1037 VCB 10 V dc; 6,000 cycles. Provided by IHSNot for ResaleN

35、o reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/623C 6* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical me

36、asurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-75

37、0. 4.5.2 Thermal resistance. Thermal resistance measurement shall be conducted in accordance with test method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application shall be 1.0 A dc. b. Collector to emitter voltage magnitude shall be 10 V dc.

38、 c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be +25C TR +75C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum limit of RJCshall be 1.5C/W. Provided by IHSNot for ResaleNo reproduction o

39、r networking permitted without license from IHS-,-,-MIL-PRF-19500/623C 7* TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3131 See 4.3.2 ZJCCollector - emitter breakdown

40、 voltage 3011 Bias condition D; IC= 100 mA dc pulsed (see 4.5.1) VCEO(sus)100 V dc Collector - emitter cutoff current Emitter - base cutoff current 3036 3061 Bias condition D; VCE= 50 V dc Bias condition D; VEB= 5 V dc ICEOIEBO1.0 2.0 mA dc mA dc Collector - emitter cutoff current 3041 Bias conditio

41、n A; VBE= 1.5 V dc; VCE= 100 V dc ICEX120 A dc Base - emitter saturated voltage 3066 Test condition A; IC= 12 A dc; IB= 120 mA dc; pulsed (see 4.5.1) VBE(sat)4.0 V dc Collector - emitter saturated voltage 3071 IC= 12 A dc; IB= 120 mA dc; pulsed (see 4.5.1) VCE(sat)3.0 V dc Forward - current transfer

42、 ratio 3076 VCE= 3.0 V dc; IC= 6.0 A dc pulsed (see 4.5.1) hFE11000 18,000 Forward - current transfer ratio 3076 VCE= 3.0 V dc; IC= 12 A dc pulsed (see 4.5.1) hFE2150 Subgroup 3 High - temperature operation: TA= +150C Collector to emitter cutoff current 3041 Bias condition C; VCE= 100 V dc; VBE= 1.5

43、 V dc ICEX21.0 mA dc Low - temperature operation: TA= -55C Forward - current transfer ratio 3076 VCE= 3.0 V dc IC= 6.0 A dc pulsed (see 4.5.1) hFE3300 See footnotes at end of table. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/623C

44、 8* TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 4 Switching parameters See figure 4 ton2.0 s Turn-on See figure 4 toff10 s Turn-off Magnitude of small- signal short-circuit forward-current transfer ratio 3306 VCE= 3.0 V dc;

45、 IC= 5.0 A dc; f = 1 MHz |hfe| 10 250 Subgroup 5 Safe operating area (continuous dc) 3051 TC= 25C; t 1 s; 1 cycle; (see figure 5) Test 1 VCE= 8.3 V dc; IC= 12.0 A dc Test 2 VCE= 30 V dc; IC= 3.3 A dc Test 3 VCE= 90 V dc; IC= 150 mA dc Safe operating area (clamped inductive) 3053 Load condition B (cl

46、amped inductive load); TA= +25C; tr+ tf 1.0 s; duty cycle 2 percent; tp= 1 ms; (vary to obtain IC); Rs= 0.10 ohms; RBB1= 80 ohms; VBB1=16 V dc; RBB2= 100 ohms; VBB2= 1.5 V dc; IC= 12 A dc; VCC= 20 V dc; RL 2 ohms; L = 10 mH; (Stancor C-2688 or equivalent) clamp voltage = 100 +0, -5 V dc; Device fail

47、s if clamp voltage not reached. Electrical measurements See table I, subgroup 2 Subgroups 6 and 7 Not applicable 1/ For sampling plan, see MIL-PRF 19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/623C 9* TABLE II. Group E inspecti

48、on (all quality levels) - for qualification or re-qualification only. MIL-STD-750 Inspection Method Conditions Qualification Subgroup 1 Temperature cycling (air to air) 1051 500 cycles. 45 devices c = 0 Hermetic seal Fine leak Gross leak 1071 Test conditions G or H. Test conditions C or D. Electrica

49、l measurements See table I, subgroup 2 herein. Subgroup 2 45 devices c = 0 High temperature reverse bias 1039 Condition A; 1,000 hours. Electrical measurements See table I, subgroup 2 herein. Subgroup 3 DPA 2102 3 devices c = 0 Subgroup 4 Thermal impedance curves See table E-IX of MIL-PRF-19500, gro