DLA MIL-PRF-19500 628 B-2012 SEMICONDUCTOR DEVICE DIODE SILICON ULTRA-FAST RECOVERY POWER RECTIFIER 1N6690 THROUGH 1N6693 1N6690US THROUGH 1N6693US JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/628B 24 August 2012 SUPERSEDING MIL-PRF-19500/628A w/AMENDMENT 1 22 November 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6690 THROUGH 1N6693, 1N6690US THROUGH 1N6693US JAN, JANTX, JANTXV, AND JANS This specificat

2、ion is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon, u

3、ltra-fast recovery, semiconductor power rectifier diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 (similar to DO-41) and 2 (surface mount). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. *

4、1.3.1 Ratings applicable to all types. Ratings applicable to all Part or Identifying Numbers (PIN). TSTGand TJ= -65C to +175C. 1.3.2 Ratings applicable to individual types. Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col. 6 Col. 7 Device type VRWMIO(1) IFSMat tp= 8.3 ms trr RJL at L = .375 inch (9.52 mm) RJE

5、C (2) V dc A A pk ns C/W C/W 1N6690, US 1N6691, US 1N6692, US 1N6693, US 600 800 1,000 1,200 20 20 20 20 375 375 375 375 40 40 40 40 4 4 4 4 3.5 3.5 3.5 3.5 (1) Derate linearly at 267 mA/C from +100C to +175C. (2) US devices only. * Comments, suggestions, or questions on this document should be addr

6、essed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . AMSC N/A FSC 5961 I

7、NCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 October 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/628B 2 FIGURE 1. Physical dimensions and configura

8、tion for 1N6690 through 1N6693. FIGURE 2. Physical dimensions for surface mount devices (1N6690US through 1N6693US). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/628B 3 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in t

9、his section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document u

10、sers are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

11、 part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. * DEPARTMENT OF DEFENSE STANDARDS

12、 MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of preced

13、ence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption

14、has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activit

15、y for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: * 3.4 Interface and physical dimensions.

16、 The interface and physical dimensions shall be as specified in MIL-PRF-19500 and figures 1 and 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/628B 4 * 3.4.1 Lead finish. Unless otherwise specified, lead or end-cap finish sha

17、ll be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish, the maximum lead temperature is limited to +175C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). * 3.4.2 Diode construction. Th

18、ese devices shall be constructed utilizing non-cavity double plug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins (see MIL-PRF-19500). Metallurgical bond shall be in accordance with the requirements of category I in MIL-PRF-19500. US v

19、ersion devices shall be structurally identical to the non-surface mount devices except for lead terminations. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and table I herein. 3.6 Electrical test requ

20、irements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Marking. Devices shall be marked as specified in MIL-PRF-19500. * 3.7.1 Marking for US devices. For US version devices only, all marking may be omitted from the device except for the cathode marking. A

21、ll marking which is omitted from the body of the device shall appear on the label of the initial container. 3.8 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner a

22、s to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.

23、3). c. Conformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E qualification shall be performed for qualification or re-qualification only. In case q

24、ualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed by the first inspection lot to this revision to maintain qualificati

25、on. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/628B 5 * 4.3 Screening (JANS, JANTX, AND JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements sha

26、ll be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTXV and JANTX level (1) 3c Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 5 Not applicable Not appli

27、cable 9 Required IR1and VFM1Not required 10 Method 1038 of MIL-STD-750, condition A Method 1038 of MIL-STD-750, condition A 11 IR1and VFM1, IR1 100 percent of initial reading or 100 nA dc ( 200 nA dc for 1N6625), whichever is greater. VFM1 0.05 V dc IR1and VFM112 Required, see 4.3.2 Required, see 4.

28、3.2 (2) 13 Subgroups 2 and 3 of table I herein: IR1 100 percent of initial reading or 100 nA dc (200 nA dc for 1N6625), whichever is greater. VFM1 0.05 V dc. Scope display evaluation (see 4.5.4) Subgroup 2 of table I herein: IR1 100 percent of initial reading or 100 nA dc (200 nA dc for 1N6625), whi

29、chever is greater. VFM1 0.05 V dc. Scope display evaluation (see 4.5.4) (1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. * (2) ZJXis not required in screen 13, if already p

30、reviously performed. * 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101, as applicable, of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and K factor. See table II, group E, subgroup 4 herein. * 4.3.2 Power bu

31、rn-in conditions. Power burn-in conditions are as follows (see 4.5.3 and 4.5.3.1 herein), TA= +55C maximum. Test conditions shall be in accordance with method 1038 of MIL-STD-750, condition B. Adjust IOto achieve the required TJ. Use method 3100 of MIL-STD-750 to measure TJ. TJ = +115C minimum and +

32、150C maximum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/628B 6 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shal

33、l be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein

34、. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. * 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. For B5, if a failure occurs, resubmission shall be at the test conditions

35、 of the original sample. Subgroup Method Condition B3 1056 -0C to +100C, 25 cycles. B3 1051 -55C to +175C, 100 cycles. B3 4066 IFSM= rated IFSM(see 1.3, col. 4); ten surges of 8.3 ms each at 1 minute intervals, superimposed on IO= 0, VRWM= 0. B4 1037 IO= IOrated minimum (see 1.3, col. 3); VR= rated

36、VRWM(see col. 2 of 1.3, and 4.5.3); 2,000 cycles. B5 1027 IO= IOrated minimum (see 1.3, col. 3 and 4.5.3); adjust TAand or IOto achieve TJ= +150C minimum. t = 1,000 hours. Temporary leads may be added for surface mount devices. n = 45, c = 0. Delta shall not exceed 60 percent of initial reading. B6

37、4081 See 4.5.5, +25C TA +35C (recorded before test is performed); RJL(maximum) 4C/W; L = .375 inch (9.53 mm). For surface mount devices (US version), RJEC= 3.5C/W maximum. B8 4065 Peak reverse power, PRM 318 W for square wave in accordance with method 4065 of MIL-STD-750 (PRM 500 W for half-sine wav

38、e). Test shall be performed on each sublot; sampling plan n = 10, c = 0, end-points, see 4.4.2. * 4.4.2.2 Group B inspection, table E-VIB (JANTX and JANTXV of MIL-PRF-19500. Subgroup Method Condition B2 1056 -0C to +100C, 10 cycles. B2 1051 -55C to +175C, 25 cycles. B3 1027 IO= IO(rated, see col. 3

39、of 1.3) minimum; adjust IOto achieve required TJof +125C minimum; apply VR = ratedVRWM(see col. 2 of 1.3), f = 50 - 60 Hz (see 4.5.3.1). Delta shall not exceed 25 percent of initial reading. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-195

40、00/628B 7 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. See table III for delta limits when

41、 applicable. * 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 1056 -0C to +100C, 10 cycles. C2 1051 -55C to +175C, 25 cycles. C2 2036 Axial devices Tension: Test condition A; weight = 12 pounds; t = 30 seconds. Lead fatigue: Test condition E; weight 2 pounds,

42、t = 15 s. NOTE: Lead fatigue is not applicable for US devices. C2 2036 US devices Tension: Test condition A; weight = 12 pounds; t = 30 seconds. Suitable fixtures may be used to pull the end-caps in a manner which does not aid construction. Reference to axial lead may be interpreted as end-cap with

43、fixtures used for mounting (see figure 3 herein). (Lead fatigue is not applicable to US diodes). C5 4081 See 4.5.5, +25C TA +35C (recorded before test is performed); RJL(maximum) 4C/W; L = .375 inch (9.53 mm). For surface mount devices (US version), RJEC 3.5C/W. C6 1027 IO= IO(rated see col. 3 of 1.

44、3) minimum; adjust IOto achieve TJof +125C minimum; apply VR = ratedVRWM(see col. 2 of 1.3), f = 50 - 60 Hz (see 4.5.3.1). Delta shall not exceed 25 percent of initial reading. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup te

45、sting in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. See table III for delta limits when applicable. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropr

46、iate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Inspection conditions. Unless otherwise specified, all inspections shall be conducted at TA= room ambient as defined in the general requirements of MIL-STD-750

47、(see 4.5). 4.5.3 Burn-in and life tests. These tests shall be conducted with a half-sine waveform of the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average rectified current. The forward conduction angle of the rectifi

48、ed current shall be neither greater than 180 degrees, nor less than 150 degrees. 4.5.3.1 Free air burn-in. The use of a current limiting or ballast resistor is permitted provided that each DUT still sees the full Pt(minimum) and that the minimum applied voltage, where applicable, is maintained throu

49、gh-out the burn-in period. TJ= +115C minimum and +150C maximum for screening, and TJ= +125C minimum for 4.4.2.2 and 4.4.3.1 life tests. Accelerated life test in 4.4.2.1 shall be TJ= +150C minimum. 4.5.4 Scope display evaluation. Scope display evaluation shall be stable in accordance with method 4023 of MIL-STD-750. Scope display