DLA MIL-PRF-19500 630 F-2012 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR P-CHANNEL SILICON TYPES 2N7389 2N7390 2N7389U 2N7389U5 AND 2N7390U 2N7390U5 JANTXV R AN.pdf

1、 MIL-PRF-19500/630F 27 January 2012 SUPERSEDING MIL-PRF-19500/630E 19 December 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, A

2、ND F This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirement

3、s for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See 6.4 for JANHC and JANKC die versions. 1.2 P

4、hysical dimensions. See figure 1 (TO-205AF) and figure 2 (LCC). * 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type (1) PT(2) PTTA= +25C (free air) RJC(3) Min V(BR)DSSVGS= 0 V ID=-1 mA dc ID1(4) (5) TC= +25C ID2(4) (5) TC= +100C TJ and TSTGW W C/W V dc A dc A dc V dc 2N7389, 2N7389U, 2

5、N7389U5 25 0.8 5 -100 -6.5 -4.1 -55 to +150 2N7390, 2N7390U, 2N7390U5 25 0.8 5 -200 -4.0 -2.4 -55 to +150 Type (1) ISIDMEASIASVGS(6) A dc A (pk) mJ A dc V dc 2N7389, 2N7389U, 2N7389U5 -6.5 -26 165 -6.5 20 2N7390, 2N7390U, 2N7390U5 -4.0 -16 171 -4.0 20 See notes on next page. AMSC N/A FSC 5961 INCH-P

6、OUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using

7、 the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 April 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/63

8、0F 2 * (1) Electrical characteristics, ratings, and conditions for “U“ and “U5” suffix devices are identical to the corresponding non “U“ and “U5” suffix devices, unless otherwise specified. (2) Derate linearly 0.2 W/C for TC +25C. (3) See figure 3, thermal impedance curves. (4) The following formul

9、a derives the maximum theoretical IDlimit. IDis limited by package and internal construction. (5) See figure 4, maximum drain current graph. (6) IDM= 4 x ID1as calculated in note 4. * 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. Type Min V(BR)DSSVGS= 0 V ID= -1 mA dc

10、 VGS(th)1VDS VGSID= -1 mA Max IDSS1VGS= 0 V VDS= 80 Max rDS(on)1(1) VGS= -12 V dc ID= ID2percent of rated VDSTJ= +25C TJ= +150C V dc V dc Min Max A dc ohms ohms 2N7389, 2N7389U, 2N7389U5 -100 -2.0 -4.0 -25 0.30 0.60 2N7390, 2N7390U, 2N7390U5 -200 -2.0 -4.0 -25 0.80 1.68 (1) Pulsed, (see 4.5.1). 2. A

11、PPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has bee

12、n made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The f

13、ollowing specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, Genera

14、l Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue,

15、Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, superse

16、des applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/630F 3 Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 CH .160 .180 4.06 4

17、.57 HD .335 .370 8.51 9.39 LC .200 TP 5.08 TP 6 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.7 19.05 7, 8 LU .016 .019 0.41 0.48 7, 8 L1.050 1.27 7, 8 L2.250 6.35 7, 8 P .100 2.54 5 Q .050 1.27 4 r .010 0.25 9 TL .029 .045 0.74 1.14 3 TW .028 .034 0.71 0.86 2 45 TP 45 TP 6 NOTES: 1. Dimensions are in

18、 inches. Millimeters are given for general information only. 2. Beyond radius (r) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 3. Dimension TL measured from maximum HD. 4. Outline in this zone is not controlled. 5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P.

19、This zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. LU applies between L1and L2. LD applies betw

20、een L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensi

21、ons for TO-205AF (2N7389, 2N7390). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/630F 4 Dimensions Symbol Inches Millimeters Min Max Min Max BL .345 .360 8.76 9.14 BW .280 .295 7.11 7.49 CH .095 .115 2.41 2.92 LL1 .040 .055 1.02 1.40

22、LL2 .055 .065 1.40 1.65 LS .050 BSC 1.27 BSC LS1 .025 BSC 0.635 BSC LS2 .008 BSC 0.203 BSC LW .020 .030 0.51 0.76 Q1 .105 REF 2.67 REF Q2 .120 REF 3.05 REF Q3 .045 .055 1.14 1.40 TL .070 .080 1.78 2.03 TW .120 .130 3.05 3.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general in

23、formation only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions for LCC (2N7389U, 2N7389U5, 2N7390U, 2N7390U5). 181Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/630F 5 3. REQ

24、UIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the appl

25、icable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as defined in MIL-PRF-19500 and as follows: IASRated avalanche current, nonrepetitive nC .nano coulomb. 3.4 Interface

26、 and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 and 2 herein. 3.4.1 Lead material and finish. Lead material shall be Kovar. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choi

27、ce of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5

28、.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. The following handling procedures shall be followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel han

29、dling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent, if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more t

30、han maximum rated voltage to any lead. h. Gate must be terminated to source. R 100 k, whenever bias voltage is to be applied drain to source. 3.6 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of country of origin may be omitted from the body o

31、f the transistor, but shall be retained on the initial container. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirements. The electrical test requirements sh

32、all be the subgroups specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking perm

33、itted without license from IHS-,-,-MIL-PRF-19500/630F 6 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4, and tables I and II).

34、4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E qualification shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that di

35、d not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted with

36、out license from IHS-,-,-MIL-PRF-19500/630F 7 * 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table

37、I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) (1) (2) JANS level JANTXV levels (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750 (see 4.3.2), optional Method 3470 of MIL-STD-750 (see 4.3.2), optional (3) 3c Method 31

38、61 of MIL-STD-750 (see 4.3.3) Method 3161 of MIL-STD-750 (see 4.3.3) 9 IGSSF1, IGSSR1, IDSS1Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1subgroup 2 of table I herein: IGSSF1= 20 nA dc or 100 pe

39、rcent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1subgroup 2 of table I herein 12 Method 1042 of MIL-STD-750, test condit

40、ion A, t = 240 hours Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, wh

41、ichever is greater. rDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. Subgroup 2 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percen

42、t of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1and VGS(th)1shall be invoked. * (3) Sha

43、ll be performed anytime after temperature cycling, screen 3a. JANTXV levels do not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/630F 8 4.3.1 Gate stress test. Apply VGS= -24 V minimum fo

44、r t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current (IAS) .ID1. b. Peak gate voltage (VGS): -12 V. c. Gate to source resistor (RGS) .25 RGS 200 . d. Initial case temperature+25C +10C, -5C. e. Inductance .(2 EAS/(IAS)2)(VBR- VDD)/VBR) mH minimum. f. Number of pulses to be

45、applied .1 pulse minimum. g. Supply voltage .VDD= -50 V, or -25 V for 100 V devices. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropri

46、ate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein

47、. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF

48、-19500, and as follows. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Condition G, 100 cycles. B4 1042 The heating cycle sha

49、ll be 30 seconds minimum. B5 1042 Condition B, VGS= 100 percent of rated, TA= +175C, t = 24 hours, or TA= +150C, t = 48 hours (manufacturers option). B5 1042 Condition A, VDS= 100 percent of rated, TA= +175C, t = 120 hours, or TA= +150C, t = 240 hours (manufacturers option). B5 2037 Bond strength; test co