DLA MIL-PRF-19500 633 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS P-CHANNEL SILICON TYPES 2N7403 AND 2N7404 JANSD AND JANSR.pdf

1、 MIL-PRF-19500/633D 10 December 2013 SUPERSEDING MIL-PRF-19500/633C 3 June 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR This specification is approved for use by all Departments a

2、nd Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened

3、(total dose and single event characterization), power transistor. One level of product assurance is provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-254). 1.3 Maximum ratings. TA= +25oC, unless otherwise specified. Type PT(1) TC= +25C

4、PTTA= +25C VDSVDGVGSRJCMax ID1(2) (3) TC=+25C ID2TC= +100C IS (2) IDMTJand TSTG2N7403 W 125 W 50 V dc -100 V dc -100 V dc 20 C/W 1.00 A dc 22 A dc 14 A dc 22 A (pk) 66 C -55 to 2N7404 -200 -200 20 1.00 15 9 15 45 +150 (1) Derate linearly 1.0 W/oC for TC +25oC;(2) The following formula derives the ma

5、ximum theoretical IDlimit. IDis limited by package and internal wires and may be limited by pin diameter: (3) See figure 2, maximum drain current graphs. AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions, or questions on this document should be addressed to D

6、LA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. The documentation and process

7、conversion measures necessary to comply with this document shall be completed by 10 February 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/633D 2 Dimensions Ltr Inches Millimeters Min Max Min Max BL .530 .550 13.46 13.97 CH .249

8、 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 TYP 3.81 TYP MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Drain Term 2 Source Term 3 Gate NOTES: 1. Dimensions are in inch

9、es. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. Die to base is BeO isolated, terminals to case ceramic (AL2O3) isolated. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (similar to TO-254

10、). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/633D 3 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 1.0 mA dc VGS(TH)1VDS VGSID= 1.0 mA dc Max I DSS1VGS= 0 VGS= 80 percent of rated VDSMax r DS(on)(1

11、) VGS= -12 V IAS = IDMTJ= 25oC at ID2TJ= 125oC at ID22N7403 2N7404 V dc -100 -200 V dc Min Max -2.0 -6.0 A dc 25 0.140 0.290 0.217 0.513 A (pk) 66 45 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specifi

12、cation. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirement

13、s of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless othe

14、rwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of th

15、ese documents are available online at http:/quicksearch.dla.mil/ or https:/www.assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the

16、 references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF

17、-19500/633D 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for

18、 listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. nC nano coulomb. IASRated avalanche current, non-re

19、petitive. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (similar to TO-254) herein. 3.4.1 Lead finish and material. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a ch

20、oice of lead finish is desired, it shall be specified in the acquisition document. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted (see 6.2). * 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Electrical performance characteristi

21、cs. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Electrostatic discharge protection. The devices covered by t

22、his specification require electrostatic discharge protection. 3.7.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches wi

23、th conductive handling devices. b. Ground test equipment, tools and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g

24、. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of th

25、e manufacturer, marking of the country of origin may be omitted from the body of the transistor but shall be retained on the initial container. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect

26、 life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/633D 5 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification ins

27、pection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with MIL-PRF-19500. 4.2.1 G

28、roup E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein shall be performed

29、 on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/633D 6 * 4.3 Screening (JANS only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as speci

30、fied herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) (1) (2) JANS (3) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, (see 4

31、.3.2) (3) 3c Method 3161 of MIL-STD-750, (see 4.3.3) 7 Optional. 9 IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I herein. 10 Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whiche

32、ver is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. 12 Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, wh

33、ichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. 14 Required. 17 For TO-254 packages: Method 1081 of MIL-

34、STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. (1) At the end of the test program, IGSSF1, IGSSR1and IDSS1, are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime before screen 9. * Provided by IHS

35、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/633D 7 4.3.1 Gate stress test. Apply VGS= -30 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. IAS= IDM.b. L = 0.1 mH. c. EAS= 1/2 LIAS2. d. VDD= -50 V to -150 V dc. e. Init

36、ial junction temperature = 25C, -5C, +10C. 4.3.3 Thermal impedance (VSDmeasurement). The delta VSDmeasurement shall be performed in accordance with method 3161 of MIL-STD-750. The delta VSDconditions (IHand VH) and maximum limit shall be derived by each vendor from the thermal response curves (see f

37、igure 3) and shall be specified in the certificate of conformance prior to qualification. The following parameter measurements shall apply: a. Measuring current (IM) 10 mA b. Drain heating current (IH) 4 A c. Heating time (tH) 100 ms d. Drain-source heating voltage (VH) -25 V e. Measurement time del

38、ay (tMD) 30 - 60 s f. Sample window time (tSW) 10 s maximum * 4.3.4 Dielectric withstanding voltage. a. Magnitude of test voltage.900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltageAll leads to case (bunch connection). d. Method of connectio

39、nMechanical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500 V/second. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shal

40、l be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/633D 8 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions sp

41、ecified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500, and as follows. End-point electrical measurements shall be in accordance with the applicable steps of table IV herein. Subgroup Method Condition B3 1051 Test condition G, 100 cycles B3 2077 SEM B4 1042 Intermittent operation life,

42、condition D. No heat sink nor or forced-air Cooling on the device shall be permitted during the on cycle. tON= 30 seconds minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated; TA= +175oC; t = 120 hours, minimum. B5 1042 Accelerated steady-state gate bias, condition B, VGS=

43、 rated; TA= +175oC; t = 24 hours. B5 2037 Bond strength, test condition A B6 3161 Thermal resistance, see 4.5.2. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical

44、 measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table IV herein. Subgroup Method Condition C2 2036 Terminal strength, test condition A, weight = 10 lbs., t = 15 sec. C5 3161 See 4.5.2. C6 1042 Test condition D; 1 cycle = 30 sec. min. 4.4.4 Group

45、D inspection. Group D inspection shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.4.1 Design parameters. Not tested on a per lot basis. Design shall be such that the devices shall be capable of meeting the requirements herein. 4.4.5 Group E inspection. Gro

46、up E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end- points) and delta requirements shall be in accordance with the applicable steps of table IV herein. 4

47、.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without l

48、icense from IHS-,-,-MIL-PRF-19500/633D 9 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750. The maximum limit of RJC= 1.0C/W. The following parameters shall apply: a. Measuring current(IM) 10 mA. b. Drain heating current (IH) . 4 A. c. Heating time (tH) Steady-state (see method 3161 of MIL-STD-750). d. Drain-source heating voltage (VH) -25 V. e. Measurement time delay (tMD) . 30 to 60 s. f. Sample window time (tSW) 10 s maximum. Provided by IHSNot for ResaleNo reproduction