DLA MIL-PRF-19500 664 D-2012 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS N-CHANNEL SILICON TYPES 2N7431U 2N7432U AND 2N7433U JANTXVR F G AND H AND JANSR F G AN.pdf

1、 MIL-PRF-19500/664D 28 March 2012 SUPERSEDING MIL-PRF-19500/664C 19 November 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H This specificatio

2、n is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for an N-channel,

3、enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions. 1.2 Physical dimensi

4、ons. See figure 1, SMD-2 (surface mount). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT (1) PTTA= +25C (1) RJC(2) VDSVDGVGSID1 (3) (4) ID2TC= +100C (3) ISIDM(5) TJand TSTGW W C/W V dc V dc V dc A dc A dc A dc A(pk) C 2N7431U 300 2.5 0.42 60 60 20 75.0 56.0 75.0 300 -55 2N7432U 3

5、00 2.5 0.42 100 100 20 51.0 32.5 51.0 204 to 2N7433U 300 2.5 0.42 200 200 20 43.0 27.0 43.0 172 +150 (1) Derate linearly by 2.4 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal constru

6、ction. (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus,

7、 OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revisi

8、on shall be completed by 28 June 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/664D 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSS VGS= 0 VGS(TH)1VDS VGSID= 1.0 Max IDSS1VGS= 0 VDS= 80 Max rDS(ON) (1) VG

9、S= 12 V dc EASat ID1IASID= 1.0 mA dc mA dc percent of rated VDSTJ= +25C at ID2TJ= +150C at ID2V dc V dc A dc ohm ohm mJ A Min Max 2N7431U 60 2.0 4.0 25 0.015 0.036 500 75.0 2N7432U 100 2.0 4.0 25 0.040 0.100 500 51.0 2N7433U 200 2.0 4.0 25 0.070 0.175 500 43.0 (1) Pulsed (see 4.5.1). 2. APPLICABLE D

10、OCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to e

11、nsure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following sp

12、ecifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STAND

13、ARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of

14、precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exem

15、ption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying a

16、ctivity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/664D 3 Symbol Dimensions Inches Millimeters Min Max Min Max BL .685 .695 1

17、7.40 17.65 BW .520 .530 13.21 13.46 CH .142 3.60 LH .010 .020 0.26 0.50 LW1 .435 .445 11.05 11.30 LW2 .135 .146 3.43 3.71 LL1 .470 .480 11.94 12.19 LL2 .152 .162 3.86 4.12 LS1 .240 BSC 6.10 BSC LS2 .120 BSC 3.05 BSC Q1 .035 0.89 Q2 .050 1.27 Term 1 Drain Term 2 Gate Term 3 Source Notes: 1. Dimension

18、s are in inches. 2. Millimeters are given for general information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for SMD-2 (surface mount package). Q1 (2X)BWBLC

19、H LW1LL1LL2(2X)CLCLLS2LS1LW2(2X)Q2CLLH(3X)12 3-C-0.10 (0.004)-B-A-0.36 (0.014) CM A B MM3 SURFACESProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/664D 4 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definition

20、s used herein shall be as specified in MIL-PRF-19500 and as follows: IASRated avalanche current, nonrepetitive nC nano Coulomb. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. Methods used for electrical isol

21、ation of the terminals shall employ materials that contain a minimum of 90 percent Al2O3 (ceramic). 3.4.1 Terminal material and finish. Terminal material shall be copper-tungsten. Terminal finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of terminal fin

22、ish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction is not be permitted to meet the requirements of this specification. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical perfo

23、rmance characteristics are as specified in paragraph 1.3, 1.4 and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection

24、. 3.7.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended. a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and p

25、ersonnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply

26、not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer , marking of the country of origin may be omitted

27、from the body of the transistor but shall be retained on the initial container. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for Res

28、aleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/664D 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspec

29、tion (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision o

30、f the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.2.1.1 Single event effects (SEE). SE

31、E shall be performed at initial qualification and after process or design changes which may affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall provide the verification test conditions from section 5 of method 1080 of MIL-STD-750 that were used to qualify

32、the device for inclusion into section 6 of the slash sheet. End-point measurements shall be in accordance with table II. SEE characterization data shall be made available upon request of the qualifying or acquiring activity. Provided by IHSNot for ResaleNo reproduction or networking permitted withou

33、t license from IHS-,-,-MIL-PRF-19500/664D 6 * 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I

34、herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement (1) (2) JANS level JANTXV levels (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAStest (see 4.3.2) Method 3470 of MIL-STD-750, EAStest (see 4.3.2) (3) 3c Method 3161 o

35、f MIL-STD-750, thermal impedance (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) 9 Subgroup 2 of table I herein. IDSS1, IGSSF1, IGSSR1,Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1,

36、 VGS(TH)1Subgroup 2 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1Subgro

37、up 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater.

38、 IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value VGS(th)1= 20 percent of initial value Subgroup 2 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, w

39、hichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value VGS(th)1= 20 percent of initial value (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR

40、1, IDSS1and VGS(th)1shall be invoked. * (3) Shall be performed anytime after temperature cycling, screen 3a; JANTXV level does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/664D 7 4.3

41、.1 Gate stress test. Apply VGS= 30 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy EAS. a. Peak current (IAS) IAS= ID1. b. Peak gate voltage (VGS) . 12 V. c. Gate to source resistor (RGS) . 25 RGS 200. d. Initial case temperature (TC) +25C +10C, -5C. e. Inductance . minimummHVVV

42、)(I2EBRDDBR2D1AS f. Number of pulses to be applied . 1 pulse minimum. g. Supply voltage (VDD) . 25 V (50 V for 2N7433). 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM,

43、 IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. * 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be

44、conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in ta

45、ble E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2075 S

46、ee 3.4.2. B3 2077 SEM qualification may be performed anytime prior to lot formation. B4 1042 Intermittent operation life, condition D, 2000 cycles . No heat sink or forced air cooling on the device shall be permitted during the on cycle; ton= 30 seconds minimum. B5 1042 Accelerated steady-state gate

47、 bias, condition B, VGS= rated, TA= +175C, t = 24 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated, TA= +175C, t =120 hours minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/664D 8 4.4.2.2 Gro

48、up B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. B3 1042 Intermittent operation life, condition D, 2,000 cycles. No heat sink or forced air cooling on the device shall be permitted during the on cycle; ton= 30 seconds minimum. 4.4

49、.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable tests of table I, subgrou