DLA MIL-PRF-19500 671 A-2012 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY POWER RECTIFIER COMMON CATHODE OR ANODE CENTER TAP TYPES 1N6828 1N6828R 1N6833 1N6833R 1N6828U3 AND 1N6833U.pdf

1、 MIL-PRF-19500/671A 17 February 2012 SUPERSEDING MIL-PRF-19500/671 21 June 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, COMMON CATHODE OR ANODE CENTER TAP, TYPES 1N6828, 1N6828R, 1N6833, 1N6833R, 1N6828U3, AND 1N6833U3, JAN, JANTX, JANTXV, AN

2、D JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requireme

3、nts for silicon, power rectifier. Four levels of product assurance are provided for each device types as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-254AA isolated), and figure 2 (SMD.5). 1.3 Maximum ratings. Type VRWM(1) IO(1) (2) (3) (4) TC = +110C IFSM(1) TC=+25 C Tp = 8

4、.3 ms TSTGTJ1N6828 1N6828R 1N6833 1N6833R 1N6828U3 1N6833U3 V 100 100 200 200 100 200 A dc 15 15 15 15 15 15 A (pk) 250 250 250 250 250 250 C -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 C -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 -65 to +150 (1) Each ind

5、ividual diode. (2) Derate linearly at 300 mA/C from TC = +150C to +200 C. (3) Total package current is limited to 30 A dc. (4) Derate linearly at 375 mA/C from TC= +110C to +150 C. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and

6、 Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conve

7、rsion measures necessary to comply with this revision shall be completed by 2 April 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/671A 2 1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical char

8、acteristics at TA= +25C. Types Max VFM1IFM = 5 A(pk) Max VFM2IFM= 15 A(pk) Max VFM3IFM = 30 A(pk) Max IRMat VRWMpulsed method (see 4.5.1) Max CJVR= 10 V dc Max RJCMax ZJXTJ= +25C IRM1TJ= +100C IRM21N6828 1N6828R 1N6833 1N6833R 1N6828U3 1N6833U3 V (pk) 0.86 0.86 0.86 0.86 0.86 0.86 V (pk) 1.1 1.1 1.1

9、 1.1 1.1 1.1 V (pk) 1.37 1.37 1.37 1.37 1.37 1.37 A 15 15 20 20 15 20 mA 1.5 1.5 1.5 1.5 1.5 1.5 pF 220 220 220 220 220 220 C/W 2.3 2.3 2.3 2.3 2.3 2.3 C/W 2 2 2 2 2 2 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specificati

10、on. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of

11、 documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherw

12、ise specified, the issues of these documents are those listed in the solicitation or contract. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these

13、 documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the

14、event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction

15、 or networking permitted without license from IHS-,-,-MIL-PRF-19500/671A 3 Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.89 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .500 .750 12.70 19.05 LO .150 BSC 3.81 BSC LS .150 TYP 3.81 TYP MHD .139 .149 3.53 3.78 MHO .665 .685

16、 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Drain Term 2 Source Term 3 Gate SCHEMATIC 1N6828 Terminal 1 = Anode 1 1N6833 Terminal 2 = Common Cathode 2 Terminal 3 = Anode 3 1N6828R Terminal 1 = Cathode 1 1N6833R Terminal 2 = Common Anode 2 Terminal 3 =

17、 Cathode 3 NOTES: 1. Dimensions are in inches. 2. Millimeters equivalents are given for general information only. 3. All terminals are isolated from case. 4. In accordance with AMSE Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (similar to TO-254AA). Provided by IHSN

18、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/671A 4 Dimensions Symbol Inches Millimeters Min Max Min Max A 0.111 0.122 2.82 3.10 B 0.291 0.301 7.39 7.65 C 0.395 0.405 10.03 10.29 D 0.281 0.291 7.14 7.39 E 0.220 0.230 5.59 5.84 F 0.115 0.125 2.92 3.1

19、8 G 0.090 0.100 2.29 2.54 H 0.145 0.155 3.68 3.94 I 0.073 TYP. 1.85 TYP. J 0.083 TYP. 2.11 TYP. K 0.005 TYP. 0.13 TYP. L 0.015 TYP. 0.015 TYP. NOTES: 1. Dimensions are in inches. 2. Millimeters equivalents are given for general information only. 3. Terminal 1 is cathode. 4. Terminal 2 and 3 is anode

20、. SCHEMATIC 2, 3 1 FIGURE 2. Physical dimensions and configuration (1N6828U3 and 1N6833U3, SMD.5). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/671A 5 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specif

21、ied in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 a

22、nd 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and on figur

23、e 1 (TO-254AA) and figure 2 (SMD .5) herein. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent Al2O3 (ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. * 3.4.1 Lea

24、d finish. Lead finish shall be in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition requirements (see 6.2). 3.4.2 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 herein. 3.5 Ma

25、rking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and 1.4 herein. * 3.7 Electrical test requirements. The electrical test requirements shall as sp

26、ecified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFIFICATION * 4.1 Classification of inspections. The inspection requirements spe

27、cified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) * c. Conformance inspection (see 4.4 and tables I, II, and III). * 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Provided

28、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/671A 6 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table E-IV). The following measurements shall be made in accordance with table I he

29、rein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of Measurement MIL-PRF-19500) JANS level JANTX and JANTXV levels JAN level 3a Temperature cycling Temperature cycling Temperature cycling in accordance with JANTX level of MIL-PRF-19500 (1) 3c Ther

30、mal impedance (see 4.3.2) Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 9 IRM1and VFM2Not applicable Not applicable (2) 10 TJ= +150C; VR= 80 percent of rated VR (see 1.3 for dc conditions).or TJ=150C, VR=100 percent of rated VRRMdc (see 1.3) for half cycle sinusoidal. Method 1038 of MI

31、L-STD-750, condition A. t = 48 hours min. TJ= +150C; VR= 80 percent of rated VR (see 1.3 for dc conditions).or TJ= +150C, VR= 100 percent of rated VRRMdc (see 1.3) for half cycle sinusoidal. Method 1038 of MIL-STD-750, condition A. t = 48 hours min. Not applicable 11 IRM1 100 percent of initial read

32、ing or 70 percent IRM1whichever is greater. VFM2 50 mV dc IRM1and VFM2Not applicable 12 See 4.3.1 t = 240 hours min See 4.3.1 t = 96 hours Not applicable 12 (a) Alternative screen may be substituted at the manufacturers option combining from step 10 to 12 (see 4.3.1) t = 240 hours min. Alternative s

33、creen may be substituted at the manufacturers option combining from step 10 to 12 (see 4.3.1) t = 96 hours min. 13 Subgroup 2 and 3 of table I herein; IRM1 100 percent of initial reading or 70 percent IRM1whichever is greater; VFM2 50 mV dc Subgroup 2 of table I herein; IRM1 100 percent of initial r

34、eading or 70 percent IRM1whichever is greater; VFM2 50 mV dc Not applicable (1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal impedance. (2) Junction temperature (TJ) is not to ex

35、ceed +150C with VRWM. TJis affected by the device mounting thermal resistance when parasitic power is generated by the temperature dependent leakage current. Until this leakage becomes significant near thermal runaway, TJremains approximately equal to TA or TLfor IO= 0. Provided by IHSNot for Resale

36、No reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/671A 7 4.3.1 Power burn-in conditions. Burn-in conditions are as follows: TJ= +150C, Io= adjusted to achieve specified TJ. Forward burn-in conditions may be AC, DC, or half cycle Sinusoidal Io. Ioand VRadjusted by man

37、ufacturer to achieve the TJminimum requirement (method 1038 of MIL-STD-750, condition A). a. Option 1 : Set TJ= Max operating temperature (+150C) based on the rated thermal resistance and variability of VF. b. Option 2 : TJ= +150C min, TC= +100C max, VR=0.8 rated VRRMdc (see1.3). Adjust dissipated p

38、ower to insure that the minimum specified TJis achieved. * 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 ofMIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). * 4.4 Conformance inspe

39、ction. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of subgroups 1 and 2, of table I herein, inspectio

40、n only (table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). * 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection

41、. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, group A, subgr

42、oup 2 herein. Delta measurements shall be in accordance with table III herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 4066 IFSM= 250 A; 10 surges of 8.3 ms each at 1 minute interval. Condition A, TA= +25 C; VR= 0; IO= 0. B4 1036 Intermittent opera

43、tion life for each diode is as follows: IFor lO= 2 A (minimum) TJ +85C, + 15C, - 5C for 2,000 cycles minimum. B5 1038 Condition A, TJ= +150 C, VRat 80 percent of rated VR. B6 Not applicable. B7 Peak reverse energy, see 4.5.3 and figure 3 herein. Test shall be performed on each sublot; sampling plan

44、= 10, c = 0. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/671A 8 4.4.2.2 Group B inspection, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 4066 IFSM= 250 A; 10 surges of 8.3 ms each at 1 minute int

45、erval. Condition A, TA= +25 C; VR= 0; IO= 0. B3 1027 IFor IO= 2 A (minimum); TJ +85C, + 15C, - 5C for 2,000 cycles minimum. B5 Not applicable. B7 Peak reverse energy, see 4.5.3 and figure 3 herein. Test shall be performed on each sublot; sampling plan = 10, c = 0. 4.4.3 Group C inspection. Group C i

46、nspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. Delta measurements shall be in accordance with table III

47、herein. Subgroup Method Condition C2 2036 Tension: Test condition A, weight = 10 lbs, t = 15 seconds. C6 1026 IFor IO= 2 A ( minimum ); TJ +85 C, + 15 C, - 5 C for 6,000 cycles minimum. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and the condition

48、s for subgroup testing in table II herein. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance shall be measured as follows in accordance with method 3101 of MIL-STD-750. Each diode leg shall be measured. a. IM10 mA. b. IH15-50 A. c. TMD100 s maxim