DLA MIL-PRF-19500 672-2001 SEMICONDUCTOR DEVICE TRANSISTOR PLASTIC NPN SILICON SWITCHING TYPE 2N2222AUE1 JAN JANTX JANJ.pdf

1、MIL-PRF-19500/67230 April 2001PERFORMANCE SPECIFICATIONSEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN,SILICON, SWITCHING, TYPE 2N2222AUE1JAN, JANTX, JANJThis specification is approved for use by all Departmentsand Agencies of the Department of Defense.1. SCOPE1.1 Scope. This specification covers the

2、 performance requirements for plastic NPN, silicon, switchingtransistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.1.2 Physical dimensions. See figure 1, SOT-23 (similar to TO-236).1.3 Maximum ratings.Types PTTA =+25C(1) (2)IC VCBO VCEO VEBO T

3、OP and TSTG RJA2N2222AUE1mW500mA600V75V50V6C-55 to +150C/W417 (1)556 (2)(1) If the printed wiring board is made of alumina substrate; alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina:Derate linearly 2.4 mW/C for TA +25C. (See layout for RJAtest).(2) If the printed wiring board is made of FR5 substrate

4、; FR5 = 1.0 x 0.75 x 0.062 in.: Derate linearly1.8 mW/C for TA +25C.AMSC N/A FSC 5961DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.INCH-POUNDBeneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use inimproving this docu

5、ment should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal(DD Form 1426) appearing at the end of this document or by letter.Provided by IHSNot for ResaleNo reproduction or netw

6、orking permitted without license from IHS-,-,-MIL-PRF-19500/67221.4 Primary electrical characteristics at TA = +25C.hFE at VCE = 10 V dchFE8IC = 1.0 AdchFE9IC = 10 AdchFE1IC = 0. 1 mAdchFE2IC = 1.0 mAdchFE3IC = 10 mAdchFE4 (1)IC = 150 mAdchFE5 (1)IC = 500 mAdcMinMax35 40 50 75325100 10030030Types Li

7、mit |hfe| f = 100 MHzCobo Switching (saturated)VCE = 20 V dcIC = 20 mA dc100kHz f 1MHzVCB = 10 V dcIE = 0ton toff2N2222AUE1 MinMax2.4pF8ns35ns300Types Limit VCE(sat)1 (1)IC = 150 mA dcIB = 15 mA dcVCE(sat)2 (1)IC = 500 mA dcIB = 50 mA dcVBE(sat)1 (1)IC = 150 mA dcIB = 15 mA dcVBE(sat)2 (1)IC = 500 m

8、A dcIB = 50 mA dc2N2222A UE1 MinMaxV dc0.3V dc1.0V dc0.61.2V dc2.0(1) Pulsed see 4.5.1.2. APPLICABLE DOCUMENTS2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. Thissection does not include documents cited in other sections of this specificatio

9、n or recommended for additionalinformation or as examples. While every effort has been made to ensure the completeness of this list, documentusers are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of thisspecification, whether or not they are listed.Pro

10、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/6723DimensionsInches MillimetersSymbolMin Max Min MaxA .110 .123 2.8 3.1B .051 .057 1.32 1.43C .037 .046 0.95 1.15D .015 .017 0.39 0.41F .005 .007 0.125 0.175G .074 .076 1.88 1.92H .018 .024

11、0.46 0.59K 0 .004 0 0.1L .094 .103 2.4 2.6N .037 .038 0.94 0.96MP1 .035 .036 0.89 0.91MP2 .031 .032 0.79 0.81MP3 .078 .080 1.99 2.01MP4 .037 .038 0.94 0.96FIGURE 1. Physical dimensions SOT-23 (similar to TO-236).NOTES:1. All dimensions are in inches.2. Millimeters are given for general information o

12、nly.3. Terminal numbers are shown for reference.1 = Base, 2 = Emitter, 3 = CollectorProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/67242.2 Government documents.2.2.1 Specifications, standards, and handbooks. The following specification

13、s, standards, and handbooks form apart of this document to the extent specified herein. Unless otherwise specified, the issues of these documents arethose listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) andsupplement there to, cited in the solicitation

14、 (see 6.2).SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-19500 - Semiconductor Devices, General Specification for.STANDARDDEPARTMENT OF DEFENSEMIL-STD-750 - Test Methods for Semiconductor Devices.(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from

15、 theDocument Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,Philadelphia, PA 19111-5094.)2.3 Non-Government publications. The following documents form a part of this document to the extent specifiedherein. Unless otherwise specified, the issues of the documen

16、ts which are DoD adopted are those listed in the issueof the DoDISS cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the DoDISSare the issues of the documents cited in the solicitation (see 6.2).JEDEC Standard 20 - Moisture Reflow Sensitivity Classificatio

17、n for Surface Mount Devices.JESD22A -112 - ESD Testing.JESD22-A101 - Steady State Temperature Humidity Bias Life Test.JESD22-A102 - Autoclave.JESD22-A103 - High temperature storage life.JESD22-A113 - Preconditioning.(Applications for copies should be addressed to the Electronics Industries Alliance,

18、 2500 Wilson Boulevard,Arlington, VA 22201-3834.)(Non-Government standards and other publications are normally available from the organizations that prepare ordistribute the documents. These documents may also be available in or through libraries or other informationalservices.)2.4 Order of preceden

19、ce. In the event of a conflict between the text of this document and the references citedherein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable lawsand regulations unless a specific exemption has been obtained.3. REQUIREMENTS3.1 General. The requ

20、irements for acquiring the product described herein shall consist of this document andMIL-PRF-19500.3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by amanufacturer authorized by the qualifying activity for listing on the applicable qualified man

21、ufacturers list (QML)before contract award (see 4.2 and 6.3).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/67253.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be asspecified in MI

22、L-PRF-19500 and as follows.FIT - Failure in time.UE1 - Unleaded encapsulated plastic over epoxy wire bonded frame (non-hermetic).3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified inMIL-PRF-19500, and figure 1 herein.3.4.1 Lead finish. Lead finish shal

23、l be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performancecharacteristics are

24、 as specified in 1.3, 1.4, and table I herein.3.6 Electrical test requirements. The electrical test requirements shall be group A as specified herein.3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except as specified herein. The part markingshall consist of an abbreviated date code

25、(Y, M), JAN brand (J), manufacturer code (m), and part number code (A)due to space limitations (see figure 2).FIGURE 2. Part marking orientation.3.7.1 Date code. The date code shall be as follows:a. 1st character: designator of the manufacturing year, where Y will be “M“ through “Z“ to indicate the

26、year. The sequence starts back at “A“ after the year 2011. This sequence will repeat every 24 years. Letters “I“and “O“ will not be used.2000M2001N2002P2003R2004S2005T2006U2007V2008W2009X2010Y2011Z2012Ab. 2nd character: designator of the manufacturing month, where M will be “1“ through “D“ to indica

27、te themonth.JAN1FEB2MAR3APR4MAY5JUN6JUL7AUG8SEP9OCTONOVNDECD3.7.2 JAN brand. The “J“ denotes the JAN brand. Refer to the certificate of conformance or unit packaging forquality assurance level.3.7.3 Manufacturers code. The “m“ (which will progress: A, B, C, etc.) denotes the manufacturer. The letter

28、 “A“is assigned to manufacturer CAGE code 14936. Contact the preparing activity for new letter assignments.3.7.4 Part code. The A is the part number code on a SOT-23 (TO-236AB) for a 2N2222AUE1.JmAProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-P

29、RF-19500/67263.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality andshall be free from other defects that will affect life, serviceability, or appearance.4. VERIFICATION4.1 Classification of Inspections. The inspection requirements specified herein

30、are classified as follows:a. Qualification inspection (see 4.2).b. Screening (see 4.3)c. Conformance inspection (see 4.4).4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and asspecified herein.4.2.1 JANJ qualification. For JANJ qualification, 4.4.2.1

31、herein shall be performed as required by the qualifyingactivity.4.2.2 JANJ devices. For JANJ level, 3.3.1 through 3.3.1.3 of MIL-PRF-19500 shall apply, except as modifiedherein. Supplier imposed requirements as well as alternate screens, procedures, and/or controls shall bedocumented in the QM plan

32、and must be submitted to the qualifying activity for approval. When alternate screens,procedures, and/or controls are used, in lieu of the JANJ screens herein equivalency shall be proven anddocumented in the QM plan. Radiation characterization may be submitted in the QM plan at the option of themanu

33、facturer, however, 3.3.1.1 of MIL-PRF-19500 is not required. Die lot control and rework for JANJ shall be inaccordance with the JANS requirements of 3.13 and D3.13.2.1 of MIL-PRF-19500. Lot formation and conformanceinspection requirements for JANJ shall be those used for JANTXV devices as a minimum.

34、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/67274.3 Screening ( JANJ, JANTX). For appendix D qualified suppliers, screening shall be in accordance withMIL-PRF-19500 (table IV), and as specified herein. The following measurements sha

35、ll be made in accordance withtable I herein. Devices that exceed the limits of table I herein shall not be acceptable. For appendix C qualifiedsuppliers (QML), and for JANJ, refer to QM plan for screening requirements. The level of screening for screens 3a,10, and 12 will be determined based on the

36、reliability FIT level (see 4.3.1).Screen (seetable IV ofMeasurementMIL-PRF-19500)JANS Level(for reference only) JANJ Level JANTX Level1a Required Required Not required1b Required Required Not required2 Not required Not required Not required3a Required Required Required3b Not applicable Not applicabl

37、e Not applicable(1) 3c Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3) Thermal impedance (see 4.3.3)4 Not applicable Not applicable Not applicable5 Not applicable Not applicable Not applicable6 Not applicable Not applicable Not applicable7a Not applicable Not applicable Not applicable7b

38、Not applicable Not applicable Not applicable8 Required Wafer level traceability Not required9 ICBO2, hFE4 ICBO2, hFE4 Not applicable10 Method 1039, condition A, ofMIL-STD-750,24 hrs minimumMethod 1039, condition A, of MIL-STD-750,24 hrs minimumMethod 1039, condition A, ofMIL-STD-750,48 hrs minimum11

39、 ICBO2, hFE2, ICBO2= 100percent of initial value or +5 nAdc, whichever is greater;hFE4 = 15 percentICBO2, hFE2, ICBO2= 100 percentof initial value or +5 nA dc, whichever isgreater;hFE4 = 15 percentICBO2, hFE412 Required240 hours minimumSee 4.3.2Required240 hours minimumSee 4.3.2Required80 hours mini

40、mumSee 4.3.213aSubgroup 2 of table I herein;ICBO2 = 100 percentof initial value or +5 nA dc,whichever is greater;hFE2 = 15 percentSubgroup 2 of table I herein;ICBO2 = 100 percentof initial value or +5 nA dc, whichever isgreater;hFE2 = 15 percentSubgroup 2 of table I herein;ICBO2 = 100 percentof init

41、ial value or +5 nA dc,whichever is greater;hFE2 = 15 percent1) 100 percent in-line electricals at 85C2) Group A, subgroup 3, high temp, 100percent13b Group A, subgroup 33) Group A, subgroup 3, low temp, n =116, c = 0Not required14a Not applicable Not applicable Not applicable14b Not applicable Not a

42、pplicable Not applicable15 Required Required Not required16 Required Required Not required(1) Thermal impedance shall be performed any time after screen 3.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/67284.3.1 QML JANTX, JANJ screeni

43、ng requirements. The level of screening will be determined by demonstration ofreliability performance. The reliability models and methods will be in accordance with the models below. The tablebelow will be used to determine the level of screening for the individual screens based on the reliability p

44、erformance.NOTE: Each screen test will be determined individually by the reliability performance demonstrated. As anexample there can be a demonstrated performance of temperature cycle to a level below 1, which would require a screen of group B n = 500 c = 0. Confidence level will be 60percent.Scree

45、nTestReliability Model1/ 2/ 3/Constants forModelUnit ofmeasureLevel Screen level 6x10-84.3, screening 100 percent( JANJ, JANTX) 6x10-8, 6x10-9Group B, n = 500 c = 0Tempcycle3aCoffin Manson M = 410 4.3, screening 100 percent( JANJ, JANTX) 10, 1 Group B, n = 500 c = 0HTRB10Arrhenious Ea = .7TJ use = 5

46、5CFIT10 4.3, screening 100 percent( JANJ, JANTX) 10, 1 Group B, n = 500 c = 0OP Life12Arrhenious Ea = .7TJ use = 55CFIT 1 Group B, n = 116 c = 013b Group A, subgroup 3 will be in accordance with 4.3, screening table for JANJ.1/ Thermo-mechanical Effects (Coffin-Manson):mutfTTA=Af = acceleration fact

47、orTt = thermal cycle temperature change in the testenvironmentTu = thermal cycle temperature change in the useenvironmentm = constant, typical value for a given failuremechanism or derived from empirical data2/ Thermal Effects (Arrhenius):=tuafTTkEA11expTu = use environment junction temperature (in

48、K)Tt = test environment junction temperature (in K)Af = acceleration factork = Boltzmans Constant (8.6171 x 10-5eV)Ea = activation energy, typical value for a given failuremechanism or derived from empirical data3/ Failure Rate Estimating Methodology:()92102,=tAfdf = failure rate (Failures-In-Time)2

49、= chi-square function = (100 - confidence level) / 100d.f. = (2n + 2) degrees of freedomn = number of failuresAf = acceleration factort = (sample size x total test time) device-hoursProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/67294.3.2 Power burn-in conditions. Power burn