DLA MIL-PRF-19500 678 B-2013 SEMICONDUCTOR DEVICE DIODE SILICON DUAL SCHOTTKY CENTER TAP POWER RECTIFIER SURFACE MOUNTED TYPES 1N6840U3 AND 1N6841U3 JAN JANTX JANTXV JANS.pdf

1、 MIL-PRF-19500/678B 22 February 2013 SUPERSEDING MIL-PRF-19500/678A 14 June 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPES 1N6840U3 AND 1N6841U3, JAN, JANTX, JANTXV, JANS This specification is approved for us

2、e by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, dual Schottky power rectifi

3、er in a surface mount package. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (U3, similar to SMD.5). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type VRWMIO(1) TC= +100 C IFSMTC=+25 C tp= 8.3 ms

4、CJat 5 V RJC(2) TSTGand TJ1N6840U3 1N6841U3 V 35 45 A dc 10 10 A (pk) 200 200 pF 400 400 C/W 2.8 2.8 C -65 to +150 -65 to +150 (1) Derate linearly at 200 mA/C from TJ =TC =+100C to + 150C. (2) Each individual diode. 1.4 Primary electrical characteristics. RJC = 1.7C/W both legs tied together. AMSC N

5、/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address

6、 information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 May 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-P

7、RF-19500/678B 2 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While

8、every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards,

9、and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semicondu

10、ctor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbin

11、s Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however,

12、 supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that

13、 are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified i

14、n MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. 3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 herein. 3.4.2 Lead finish. Lead finish shall be solder

15、able in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specifie

16、d herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/678B 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general inform

17、ation only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 4. Terminal 1 is common cathode. 5. Terminal 2 is anode 1. 6. Terminal 3 is anode 2. * FIGURE 1. Physical dimensions and configuration (SMD.5) Dimensions Ltr Inches Millimeters Min Max Min Max BL .395 .405 10.03

18、10.29 BW .291 .301 7.39 7.65 CH .108 .124 2.74 3.15 LH .010 .020 0.25 0.51 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.92 3.18 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 Q1 .030 0.76 Q2 .030 0.76 U3 Provided by IHSNot for ResaleNo reproduction or networki

19、ng permitted without license from IHS-,-,-MIL-PRF-19500/678B 4 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defe

20、cts that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4 and tables I and II).

21、4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.3 Screening (JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall b

22、e made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Method 3101 of MIL-STD-750, (see 4.3.2). Method 3101 of MIL-STD-750, (see 4.3.2). 9 and 1

23、0 Not applicable. Not applicable. 11 VF2and lR1. VF2and lR1. 12 Condition A. See 4.3.1, t = 240 hours. Condition A. See 4.3.1, t = 48 hours. 13 Subgroups 2 and 3 of table I herein; VF2= 50 mV, lR1= 100 percent of initial value or 25 A, whichever is greater. Subgroup 2 of table I herein; VF2= 50 mV,

24、lR1= 100 percent of initial value or 25 A, whichever is greater. (1) Shall be performed anytime after temperature cycling, screen 3a. JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Burn-in conditions are as follows: Method 1038 of MIL-ST

25、D-750, test condition A. TC = + 125C; VR= 80 percent of rated VRWMdc. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tM, tSW, (and VHwhere appropriate). Measureme

26、nt delay time (tMD) = 100 s max. See table III, group E, subgroup 4 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/678B 5 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group

27、 A inspection. Group A inspection shall be conducted in accordance with appendix E, table E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end points) shall be as specified in table I subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance w

28、ith the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end points) shall be in accordance with table I subgroup 2 herein. Delta requirements shall be in accordance with table II herein

29、. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 4066 IFSM= 200 A; 1 surge of 8.3 ms superimposed on IO. Condition A, TA= 25C; VR= 0; IO= 10 A continuous half-wave. B4 1037 Each diode: IFor lO= 2 A (minimum) TJ= 85C, + 15C, - 5C for 2,000 cycles minimum

30、. B5 1038 Condition B, TJMAX= +150C, TA= 100C, 240 hrs. B6 3101 Limit for thermal resistance is 2.80C/W per side. 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 4066 IFSM= 200 A; 1 surge of 8.3 ms superimposed on IO. Condition A, TA= 2

31、5C; VR= 0; IO= 10A continuous half-wave. B3 1037 Each diode: IFor lO= 2 A ( minimum ) TJ= 85C, +15C, - 5C for 2,000 cycles minimum. B5 Not applicable. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MI

32、L-PRF-19500, and as follows. Electrical measurements (end points) shall be in accordance with table I subgroup 2 herein. Delta requirements shall be in accordance with table II herein. Subgroup Method Condition C3 2006 Conditions are as follows: X1, Y1, Z1and Z2axis. C5 3101 See 4.3.2, RJC= 2.80C/W

33、maximum, per side. C6 1037 Each diode: IFor lO= 2 A ( minimum ) TJ= 85C, +15C, -5C for 6,000 cycles minimum. 4.4.4 Group E inspection. Group E inspection shall be performed for qualification or requalification only. The tests specified in table III herein must be performed to maintain qualification.

34、 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without

35、license from IHS-,-,-MIL-PRF-19500/678B 6 TABLE I. Group A inspection. Inspection 1/ 2/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Thermal impedance 3/ 3101 See 4.3.2 ZJXC/W Forward voltage 4011 IFM= 3 A (dc) pulsed (see 4.5.1)

36、. IFM=10 A (dc) pulsed (see 4.5.1). IFM=20 A (dc) pulsed (see 4.5.1). VF1 VF2 VF30.62 0.75 0.88 V dc V dc V dc Reverse current leakage 1N6840U3 1N6841U3 4016 DC method, ( see 4.5.1.) VR= 35 V dc VR= 45 V dc IR1100 A dc Subgroup 3 High temperature operation: TA= +100C Reverse current leakage 1N6840U3

37、 1N6841U3 4016 DC method, pulsed (see 4.5.1). VR= 35 V dc VR= 45 V dc IR215 mA dc Forward voltage 4011 IF= 10 A pulsed (see 4.5.1) IF= 20 A pulsed (see 4.5.1) VF4 VF50.63 0.70 V dc Forward voltage 4011 TA= -55C Pulsed (see 4.5.1), IF= 10 A (dc). VF60.85 V dc See footnotes at end of table. Provided b

38、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/678B 7 TABLE I. Group A inspection - Continued. Inspection 1/ 2/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 4 Junction capacitance 4001 VR= 5 V dc; f = 1 MHz, VSIG= 50 mV (p-p)

39、 (max) CJ400 pF Subgroup 5 Insulation resistance (Dielectric withstanding voltage) 1016 VR= 600 V dc; from lid to bottom case. All terminals shorted. DWV10 A Subgroup 6 and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 2/ All measurements are for each side. 3/ If this test is performed 1

40、00 percent in screening, this test need not be performed in group A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/678B 8 TABLE II. Groups B and C delta measurement. 1/ 2/ 3/ Step Inspection MIL-STD-750 Symbol Limits Unit Method Condi

41、tions Min Max 1. Forward voltage 4011 IF= 10 A (pk) pulsed (see 4.5.1) VF250 mV 2. Reverse current leakage 4016 DC method VR= VRWMIR125 A or 100 percent of initial reading, whichever is greater. 1/ The delta measurements for table E-VIA (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 3, see tabl

42、e II herein, steps 1 and 2. b. Subgroup 4, see table II herein, steps 1 and 2. c. Subgroup 5, see table II herein, steps 1 and 2. 2/ The delta measurements for table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1 and 2. b. Subgroup 3, see t

43、able II herein, steps 1 and 2. c. Subgroup 6, see table II herein, steps 1 and 2. 3/ The delta measurements for table E-VII of MIL-PRF-19500 are as follows: a. Subgroups 2 and 3, see table II herein, steps 1 and 2 for all levels. b. Subgroup 6, see table II herein, steps 1 and 2 for all levels. Prov

44、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/678B 9 * TABLE III. Group E inspection (all quality levels) for qualification only. Inspection MIL-STD-750 Qualification Inspection Method Conditions Subgroup 1 Thermal shock (temperature cycl

45、ing) 1051 500 cycles. Condition G. 45 devices, c = 0 Hermetic seal Fine leak Gross leak Electrical measurements 1071 See table I, subgroup 2. Subgroup 2 Burn-in (steady-state blocking life) Electrical measurements 1038 t = 1,000 hours, TJ= + 125C; VR= 80 percent of rated VRWM. See table I, subgroup

46、2. 45 devices, c = 0 Subgroup 3 Not applicable Subgroup 4 Thermal impedance curves 3101 See MIL-PRF-19500. Sample size N/A Subgroup 5 Surge 4066 Condition A, TA= +25C IFSM= 200 A, one surge of 8.3 ms superimposed on IO. VR= 0; IO= 10 A pk half sine wave, continuous. 5 devices, c = 0 Electrical measu

47、rements See table I, subgroup 2. * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/678B 10 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When

48、 packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points packaging activity within the Military Department or Defense Agency, or within the Military Departments System Command. Packaging data retrieval is available from the managing Military Departments or Defense Agencys automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. N