DLA MIL-PRF-19500 681 C-2013 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY DUAL CENTER TAP TYPE 1N6843CCU3 JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/681C 25 September 2013 SUPERSEDING MIL-PRF-19500/681B 5 December 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N6843CCU3, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies

2、of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, Schottky dual power rectifier diodes for use in high frequenc

3、y switching power supplies and resonant power converters. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (U3). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Column 1 Column 2 Column 3 Column 4 Colum

4、n 5 Column 6 Column 7 Column 8 Type VRWMIO (1) (2) TC = +25C IFSM (2) tp= 8.3 ms, TC= +25C RJC(2) RJC(3) TSTGand TJCJat 5 V V dc A dc A (pk) C/W C/W C pF 1N6843CCU3 100 15 100 3.5 1.75 -65 to +150 275 (1) See temperature-current derating curves in figure 2. (2) Each leg. (3) Entire package. * 1.4 Pr

5、imary electrical characteristics. RJC= 1.75C/W maximum for entire package. RJA= 40C/W maximum each leg. RJC= 3.5C/W maximum each leg, see figure 3. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 39

6、90, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply wit

7、h this revision shall be completed by 25 December 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/681C 2 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M,

8、 diameters are equivalent to x symbology. FIGURE 1. Physical dimensions. Dimensions Ltr Inches Millimeters Min Max Min Max BL .395 .405 10.03 10.29 BW .291 .301 7.39 7.65 CH .112 .124 2.84 3.15 LH .010 .020 0.25 0.51 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.92 3.18 LS1 .150 BSC 3.81 BSC LS2 .075 BSC

9、1.91 BSC LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 Q1 .030 0.76 Q2 .030 0.76 U3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/681C 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sect

10、ions 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must

11、 meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the exten

12、t specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semicon

13、ductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the

14、 contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Genera

15、l. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified man

16、ufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified i

17、n MIL-PRF-19500, and on figure 1 herein. 3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figure 1. 3.4.2 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be speci

18、fied in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as speci

19、fied in tables I and II herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/681C 4 3.8 Workmanship. Semiconductor devices shall be processed in such a manner

20、 as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see

21、4.3). c. Conformance inspection (see 4.4 and tables I and II herein). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification onl

22、y. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to mainta

23、in qualification. * 4.3 Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acc

24、eptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) (2) 3b Method 4066 of MIL-STD-750, condition A, one pulse, IO= 0, VRWM= 0, see 1.3 herein, column 4. Method 4066 of MIL-STD-750, condition A, one pulse, IO= 0, VRWM= 0, see 1.3 herein, column 4. (1)

25、3c Method 3101 of MIL-STD-750, thermal impedance (see 4.3.2) Method 3101 of MIL-STD-750, thermal impedance (see 4.3.2) 3d Method 4064 of MIL-STD-750, inductive avalanche energy test (see 4.3.3) Method 4064 of MIL-STD-750, inductive avalanche energy test (see 4.3.3) 9, 10 Not applicable Not applicabl

26、e 11 VF2and IR1VF2and IR112 See 4.3.1 See 4.3.1 13 Subgroup 2 and 3, of table I herein, VF2and IR1, excluding thermal impedance; VF2= 50 mV (pk); IR1= 100 percent from the initial value or 10 uA whichever is greater. Subgroup 2, of table I herein excluding thermal impedance; VF2and IR1; VF2= 50 mV (

27、pk); IR1= 100 percent from the initial value or 10 uA whichever is greater. (1) Thermal impedance and surge shall be performed any time after screen 3a and before screen 13. (2) Surge shall precede thermal impedance. 4.3.1 Power burn-in conditions. Burn-in conditions are as follows: Method 1038 of M

28、IL-STD-750, test condition A. TJ= +125C; VR= 80 V dc. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). Measurement delay time (tMD

29、) = 70 s max. See table III, group E, subgroup 4 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/681C 5 * 4.3.3 Inductive avalanche energy test. The inductive avalanche energy test is to be performed in accordance with method 40

30、64 of MIL-STD-750 using the circuit as shown on figure 4 or equivalent. The Schottky rectifier under test must be capable of absorbing the reverse energy, as follows: IRM= 1 A, VRSM= 100 V minimum, L = 100 H. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-1950

31、0. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2 Group B inspection.

32、 Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage tes

33、t (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition A, VR=80 V dc, TJ=+125C, t =

34、240 hrs min; (heat sinking allowed). 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TC= +85C minimum, IF= 2 A minimum for 2,000 cycles. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the condi

35、tions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. Subgroup Metho

36、d Condition C2 2036 Not applicable. * C5 3101 Limit for thermal resistance is 3.5C/W for each leg. C6 1037 TC= +85C, minimum, IF= 2 A minimum for 6,000 cycles. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing i

37、n table E-IX of MIL-PRF-19500, and table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for Resal

38、eNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/681C 6 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3101 See 4.3.2 ZJXC/W For

39、ward voltage 4011 Pulsed test (see 4.5.1) IF= 5 A (pk) IF= 15 A (pk) IF= 30 A (pk) VF1 VF2 VF30.77 1.03 1.27 V V V Reverse current 4016 VR= 100 V, DC method IR10.010 mA dc Subgroup 3 High temperature operation: TC= +125 C Forward voltage Pulsed test (see 4.5.1) IF= 5 A (pk) IF= 15 A (pk) IF= 30 A (p

40、k) VF4 VF5 VF6 0.60 0.77 0.95 V V V Reverse current 4016 VR= 100 V, DC method IR25.0 mA Low temperature operation: TC= -55C Forward voltage 4011 Pulsed test (see 4.5.1) IF= 5 A (pk) IF= 15 A (pk) IF= 30 A (pk) VF7 VF8 VF9 0.86 1.18 1.43 V V V Subgroup 4 Junction capacitance 4001 VR= 5 V dc, f = 1 MH

41、z, VSIG= 50 mV (p-p) CJ275 pF Subgroup 5 Not applicable See footnotes at end of table. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/681C 7 * TABLE I. Group A inspection Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method

42、 Conditions Min Max Subgroup 6 Surge 4066 See column 4 of 1.3, ten surges each leg, 1 min between surges, (see 4.5.1) Electrical measurements See table I, subgroup 2 herein Subgroup 7 Dielectric withstanding voltage 1016 VR= 500 V dc; all leads shorted; measure from leads to case DWV 10 A Scope disp

43、lay evaluation 4023 Stable only Electrical measurements See table I, subgroup 2 herein. 1/ For sampling plan, see MIL-PRF-19500. * 2/ This test required for the following end-point measurements only: Group B, subgroups 3 and 5 (JANS). Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV). Group C, sub

44、group 2 and 6. Group E, subgroup 1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/681C 8 * TABLE II. Groups B, C, and E delta requirements. 1/ 2/ 3/ 4/ 5/ 6/ Step Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max 1.

45、Forward voltage 4011 IF= 15 A (pk) pulsed (see 4.5.1) VF250 mV dc from initial reading. 2. Reverse current 4016 Vr = 100 V IR1100 pecent from initial reading or 10uA whichever is greater. 1/ For each leg. 2/ The delta measurements for table E-VIA (JANS) of MIL-PRF-19500 are subgroups 4 and 5, see ta

46、ble II herein, both steps. 3/ The delta measurements for table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500 are subgroups 3 and 6, see table II herein, both steps. 4/ The delta measurements for table E-VII of MIL-PRF-19500 are subgroup 6, see table II herein, both steps for all levels. 5/ Devices

47、which exceed the table I limits for this test shall not be accepted. 6/ The delta measurements for table E-IX of MIL-PRF-19500 are subgroups 1 and 2, see table II herein, both steps. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/681C

48、9 * TABLE III. Group E inspection (all quality levels) - for qualification and requalification only. Inspection MIL-STD-750 Qualification Method Conditions Subgroup 1 n = 45, c = 0 Temperature cycling (air to air) 1051 Test condition G, 500 cycles, -55C to +150C. Hermetic seal 1071 Electrical measurements See table I, subgroup 2, and table II. Subgroup 2 n = 45, c = 0 Life test 1048 t = 1,000 hours, TC = +125C, VR= 80 percent rated voltage (see 1.3, column 2 herein). Electrical measurements See table I subgroup 2, and table II. Subgroup 4 Thermal impedance curves See MIL-PRF-19500. Su