DLA MIL-PRF-19500 688 B-2012 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL SILICON TYPES 2N7002 2N7002T2 AND 2N7002UB JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/688B 3 February 2012 SUPERSEDING MIL-PRF-19500/688A 10 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7002, 2N7002T2, AND 2N7002UB, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Depart

2、ments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic

3、level, high frequency, high switching speed MOSFET, transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-18), figure 2 (TO-205AD), and figure 3 (UB). * 1.3 Maximum ratings. Unless otherwis

4、e specified, TA= +25C. Types PTTA = +25C PTTC= +25C PT(1) TSP(IS)= +25C RJARJCRJSP(IS)mW W W C/W C/W C/W 2N7002 (1) 500 1.0 N/A (2) 325 150 N/A 2N7002T2 800 (1) 5 N/A (2) 175 (2) 30 N/A 2N7002UB (1) 500 N/A 1.5 325 N/A (2) 90 Type VDSVGSID1(3) TC= +25C ID2(3) TC= +100C IDMTJand TSTGV dc V dc A dc A

5、dc A(pk) C 2N7002 2N7002T2 2N7002UB 60 40 0.2 1.2 0.7 0.073 0.49 0.29 0.8 4 2.4 -65 to +200 (1) For derating, see figures 4, 5, and 6. (2) For thermal curves, see figures 7, 8, 9, and 10. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal wires an

6、d may be limited by pin diameter: AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since conta

7、ct information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 May 2012. Provided by IHSNot fo

8、r ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/688B 2 1.4 Maximum ratings. Unless otherwise specified, TC= +25C. Type Min V(BR) DSSVGS= 0 V VGS (th)1VDS= VGSID= 0.25 mA dc Max IDSS1VGS= 0 V VDS= 60 Max rDS(on)(1) VGS= 10 V dc ID= 10 A dc percent of rated V

9、DSTJ= +25C at ID1TJ= +125C at ID22N7002, T2, UB V dc 60 V dc Min Max 1 2.5 A dc 0.1 Ohm 4 Ohm 13.5 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cit

10、ed in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

11、 specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

12、those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist

13、.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this d

14、ocument and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

15、IHS-,-,-MIL-PRF-19500/688B 3 Dimensions Symbol Inches Millimeters Note Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.70 19.05 7,8 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.250 6.35 7,8 P .100 2

16、.54 Q .030 0.76 5 TL .028 .048 0.71 1.22 3,4 TW .036 .046 0.91 1.17 3 r .010 0.25 10 45 TP 45 TP 6 1, 2, 9, 11, 12 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimen

17、sion TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. * 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to

18、tab at MMC. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The drain shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In

19、 accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 = source, lead 2 = gate, lead 3 = drain. * FIGURE 1. Physical dimensions, 2N7002, TO-206AA (formerly TO-18). TO-18 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-P

20、RF-19500/688B 4 FIGURE 2. Physical dimensions 2N7002T2, (TO-205AD). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/688B 5 Symbol Dimensions Notes Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335

21、.370 8.51 9.40 TW .028 .034 0.71 0.86 2 TL .029 .045 0.74 1.14 3 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.70 19.05 7,8 LC .200 TP 5.08 TP 6 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.250 6.35 7,8 P .100 2.54 5 Q .050 1.27 4 r .010 0.25 9 45 TP 45 TP 6 NOTES: 1. Dimensions are in inches. Millime

22、ters are given for general information only. 2. Beyond radius (r) maximum, TW shall be held for a minimum length of .011 (0.028 mm). 3. Dimension TL measured from maximum HD. 4. Outline in this zone is not controlled. 5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is co

23、ntrolled for automatic handling. 6. Leads at gauge plane .054 + .001, - .000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at MMC relative to tab at MMC. 7. LU applies between L1and L2. LD applies between L2and L minimum. Diameter is uncontrol

24、led in L1and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. 11. Lead 1 = source, lead 2 = gate, lead 3 = drain. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physica

25、l dimensions 2N7002T2, (TO-205AD) - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/688B 6 Dimensions Symbol Inches Millimeters Note Min Max Min Max 1,2,3,4 BH .046 .056 1.17 1.42 BL .115 .128 2.92 3.25 BW .085 .108 2.16 2.74

26、 CL .128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.96 LL2 .017 .035 0.43 0.89 LS1 .036 .040 0.91 1.02 LS2 .071 .079 1.81 2.01 LW .016 .024 0.41 0.61 r .008 0.20 r1 .012 0.31 r2 .022 0.56 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on packa

27、ge denote metallized areas. Lid on package is a metallized area. 4. Pad 1 = Gate, Pad 2 = Source, Pad 3 = Drain, Pad 4 = shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 3. Physical dimensions, 2N7002UB, surface mount (UB version).

28、CERAMIC UB Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/688B 7 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under th

29、is specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions us

30、ed herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 (TO-205AD), figure 2, and figure 3 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-1950

31、0, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic dischar

32、ge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. The following handling practices shall be followed: a. Devices shall be handled on

33、 benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if

34、 practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise speci

35、fied herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to b

36、e uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/688B 8 4. VERIFICATION 4.1 Classification of Inspections. The inspection req

37、uirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualificat

38、ion. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior

39、revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/688B 9 * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in acco

40、rdance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) (1) (2) Measurement JANS JANTX and JANTXV (3

41、) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.2) Method 3161 of MIL-STD-750, thermal impedance (see 4.3.2) 9 IDSS1, IGSSF1, IGSSR1, subgroup 2 of table I herein Not applicable 10 Method 1042 of MIL-STD-750, test condition B

42、Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1of subgroup 2 of table I herein. IGSSF1 = 10 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 10 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 1 A dc or 100 percent of

43、 initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 of subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1of subgroups 2 and 3 of table I herein. IGSSF1 = 1

44、0 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 10 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 1 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value, or 0.5 ohm, whichever is greater VGS(TH)1 = 10 percent

45、 of initial value or 0.3 V dc. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1of subgroup 2 of table I herein. IGSSF1 = 10 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 10 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 1 A dc or 100 percent of initial value, w

46、hichever is greater. rDS(ON)1 = 20 percent of initial value, or 0.5 ohm, whichever is greater VGS(TH)1 = 10 percent of initial value or 0.3 V dc. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)

47、1shall be invoked. * (3) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/688B 10 4.3.1 Gate s

48、tress test. Apply VGS= 24 V minimum for t = 250 s minimum. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. * 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance wit