DLA MIL-PRF-19500 696 A-2009 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR PLASTIC N-CHANNEL SILICON TYPE 2N7537 2N7537A JAN AND JANTX.pdf

1、 MIL-PRF-19500/696A 20 February 2009 SUPERSEDING MIL-PRF-19500/696 22 November 2001 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, PLASTIC, N-CHANNEL, SILICON, TYPE 2N7537, 2N7537A, JAN AND JANTX This specification is approved for use by all Departments and Agencies

2、 of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for two plastic N-channel, enhancement-mode, MOSFET, power transistors.

3、 Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. * 1.2 Physical dimensions. See figure 1 and figure 2 (TO-220AB). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types PT(1) TC= +25C PTTA= +25C RJC(2) VDSVDGVGSID1TC=+25C (3) ID2TC= +100C

4、(3) ISIDM (4) TJ and TSTG VISO 70,000 ft. altitude W W C/W V dc V dc V dc A dc A dc A dc A dc C V dc 2N7537 2N7537A 125 125 1.0 1.0 500 500 500 500 30 30 8.0 8.0 5.1 5.1 8.0 8.0 32 32 -55 to 500 500 2N7552 125 2.0 1.0 60 60 20 72 (5) 51 (5) 72 288 +150 500 2N7553 167 2.0 0.75 100 100 20 75 (5) 53 (5

5、) 75 300 500 2N7554 250 2.0 0.50 200 200 20 44 (5) 32 (5) 44 175 500 (1) Derate linearly by 1.0 W/C (2N7537, 2N7537A), 1.0 W/C (2N7552), 1.33 W/C (2N7553), 2.0 W/C (2N7554), for TC +25C. (2) See figure 3, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. ID

6、is limited by package and internal construction. (4) IDM= 4 X ID1as calculated in note (3). (5) See figure 4, maximum drain current graphs. AMSC N/A FSC 5961 INCH-POUND Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

7、Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. Device types 2N7537 and 2N7

8、537A are inactive for new design. The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 May 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/696A 2 * 1.4 Primary electrica

9、l characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 VGS(TH)VDS VGSMax IDSS1VGS= 0 VDS= rated VDSMax rDS(ON)(1) VGS= 10 V dc EASat ID1IASV dc V dc A dc ohm mJ A Min Max 2N7537 2N7537A 500 500 2.0 2.0 4.0 4.0 25 25 2.125 2.125 510 510 8.0 8.0 2N7552 60 2.0 4.0 25 0.012 165 72 2N7553 100 3.5 5.5 1 0

10、.014 192 45 2N7554 200 3.0 5.0 25 0.054 315 44 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or reco

11、mmended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.

12、2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. * D

13、EPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. * DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.da

14、ps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these document

15、s are those cited in the solicitation or contract. JESD22-A101 Steady State Temperature Humidity Bias Life Test. JESD22-A102 Accelerated Moisture Resistance - Unbiased Autoclave. JESD22-A113 Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (Copies of these documents

16、are available from http:/www.jedec.org/default.cfm or the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834.) 2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cite

17、d herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/696A 3 In

18、ches Millimeters Ltr Min Max Min Max BL .240 .255 6.10 6.47 BL1.140 .160 3.55 4.06 CH .165 .185 4.20 4.69 LD .045 .055 1.15 1.40 LL .530 .555 13.47 14.09 LO .104 .115 2.64 2.92 LS .100 BSC 2.54 BSC MHD .139 .149 3.54 3.78 MHO .584 .600 14.83 15.24. TL .584 .600 14.83 15.24 TT .048 .052 1.22 1.32 TW

19、.405 .415 10.29 10.54 Term 1 Gate Term 2 Drain Term 3 Source NOTES: 1. Dimensions are in inches. * 2. Millimeters are given for general information only. 3. The US Government preferred system of measurement is the metric SI system. However, this item was originally designed using inch-pound units of

20、 measurement. In the event of a conflict between the metric and inch-pound units, the inch-pound units shall take precedence. 4. All terminals are isolated from the case. 5. This area is for the lead feed-thru eyelets (configuration is optional, but will not extend beyond this zone). * FIGURE 1. Phy

21、sical dimensions for 2N7537 and 2N7537A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/696A 4 * FIGURE 2. Physical dimensions for 2N7552, 2N7553, 2N7554. Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

22、ense from IHS-,-,-MIL-PRF-19500/696A 5 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Bottom tab is electrically connected to drain. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 5. Dimensions TL and TW do not include mold

23、flash. Mold flash shall not exceed .005 inch (0.13 mm) for each side. These dimensions are measured at the outermost extreme of the plastic body. 6. Dimensions for heat-sink tab and lead exclude burs. * FIGURE 2. Physical dimensions for 2N7552, 2N7553, 2N7554 - Continued. Dimensions Ltr Inches Milli

24、meters Notes Min Max Min Max BL .330 .355 8.38 9.02 CH .140 .190 3.56 4.83 LL .500 .580 12.70 14.73 LL1 .250 6.35 LO .080 .115 2.03 2.92 LS .100 BSC 2.54 BSC LT .014 .024 0.35 0.61 LU .045 .070 1.14 1.78 LW .015 .040 0.38 1.02 MHD .139 .161 3.53 4.09 TH .230 .270 5.84 6.86 6 TL .560 .650 14.23 16.51

25、 5, 6 TL1 .480 .507 12.19 12.88 6 TL2 .100 .135 2.54 3.43 TT .020 .051 0.51 1.30 6 TW .380 .420 9.65 10.67 5, 6 TW1 .270 .350 6.86 8.89 TW2 .030 0.76 Term 1 Gate Term 2 Drain Term 3 Source Term 4 Drain Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

26、MIL-PRF-19500/696A 6 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying act

27、ivity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IASRated avalanche current, nonrep

28、etitive nC nano Coulomb. * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 and figure 2. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of le

29、ad finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction is not permitted to meet the requirements of this specification. 3.5 Electrostatic discharge protection. The devices covered by this specification require electr

30、ostatic discharge protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices.

31、b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised dur

32、ing test and troubleshooting to apply not more than maximum rated voltage to any lead. * h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance ch

33、aracteristics are as specified in 1.3, 1.4, and table I herein. * 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except as specified herein. 3.8.1 JAN brand. The “J“ denotes the JAN

34、brand. Refer to the certificate of conformance or unit packaging for quality assurance level. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by

35、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/696A 7 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Co

36、nformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification

37、 was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided

38、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/696A 8 * 4.3 Screening ( JANTX). For appendix D qualified suppliers, screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be

39、made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANTX Level (1) Gate stress test (see 4.3.1) (1) Method 3470 of MIL-STD-750, EAStest (see 4.3.2) 1a Not applicable 1b Method 2069 of

40、MIL-STD-750 required, pre-cap internal visual 2 Not required 3a Method 1051 of MIL-STD-750, temperature cycling required 3b Not required (1) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) 4 Not required 5 Not applicable 6 Not required 7a Not applicable 7b Not applicable 8 Not applicabl

41、e 9 Not required 10 Method 1042 of MIL-STD-750, test condition B required, VGS= 16 V dc 11 Subgroup 2 of table I herein 12 Method 1042 of MIL-STD-750, test condition A required 13a Subgroup 2 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc o

42、r 100 percent of initial value, whichever is greater. IDSS1= 10 A dc (0.5 A dc for 2N7553) or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value VGS(TH)1= 20 percent of initial value. 13b Not applicable 14a Not applicable 14b Not applicable 15 Not applicable 16

43、 Not applicable (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/696A 9 * 4.3.1 Gate stress test. Apply VGS=

44、 35 V minimum for t = 250 s minimum. * 4.3.2 Single pulse avalanche energy (EAS). a. Peak current (IAS). . IAS(max). b. Peak gate voltage (VGS) . 10 V. c. Gate to source resistor (RGS) . 25 RGS 200. d. Initial case temperature (TC) +25C +10C, -5C. e. Inductance (L) . ASD12BR DDBR2E( I )(V - V )VmH m

45、inimumf. Number of pulses to be applied . 1 pulse minimum. g. Supply voltage (VDD) 50 V. * 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere ap

46、propriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. * 4.4 Conformance inspection. For appendix D qualified suppliers, conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. * 4.4.1 Group A inspection. Group A inspection s

47、hall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) for JAN and JANTX shall be as specified table I, subgroup 2. * 4.4.2 Group B inspection, JAN and JANTX. Group B inspection shall be conducted in accordance with the conditions specified in 4.4

48、.2.1 for JAN and JANTX and as follows. Electrical measurements (end-points) for JAN and JANTX shall be as specified table I, subgroup 2, herein. Separate samples may be used for each subgroup, n = 45, c = 0. Subgroup Method Condition B1 2026 1022 Solderability. Resistance to solvents (not required for laser marked devices). B1 JESD22-A113 (1) Pre conditioning to level 1 for the following sequential tests: B1 JESD22-A102 (1) Autoclave: condition C, 96 hours B1 1051 Temp cycle 168 cycles condition G. B2 1056 Thermal shock: 10 cycles, condition A. B3 1042 High temperature reverse bias: