DLA MIL-PRF-19500 726 C-2011 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6940UTK3 1N6941UTK3 1N6942UTK3 1N6940UTK3CS 1N6941UTK3CS 1N6942UTK3CS 1N6940UTK3AS 1N6941.pdf

1、 MIL-PRF-19500/726C 14 November 2011 SUPERSEDING MIL-PRF-19500/726B 28 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6940UTK3, 1N6941UTK3, 1N6942UTK3, 1N6940UTK3CS, 1N6941UTK3CS, 1N6942UTK3CS, 1N6940UTK3AS, 1N6941UTK3AS, AND 1N6942UTK

2、3AS, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the

3、 performance requirements for silicon, Schottky power surface mount rectifier diodes in a low profile package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. Unless otherwise specified TC=

4、 +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Column 6 Column 7 Types VRWMIOTC= +100C IFSM tp= 8.3 ms, TC= +25C RJC (junction to cathode side) RJC (junction to anode side) TSTG and TJV dc A dc A (pk) C/W C/W C 1N6940UTK3, CS, AS 15 150 2,000 .25 .35 -65 to +150 1N6941UTK3, CS, AS 30 150 2,000

5、.25 .35 1N6942UTK3, CS, AS 45 150 2,000 .25 .35 AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil . Since contact information can change

6、, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 February 2012. Provided by IHSNot for ResaleNo reproduc

7、tion or networking permitted without license from IHS-,-,-MIL-PRF-19500/726C 2 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Types VFMaximum forward voltage at TC= +25C V dc at IFVFMaximum forward voltage TC= +125C V dc at

8、IFIRMaximum reverse current (see column 2) mA at VRWMCJMaximum junction capacitance f = 1MHz VR= 5 VDC 25A 50A 75A 110A 150A 110A 150A TJ= +25C TJ= +125C VRpF 1N6940UTK3, CS, AS .43 .50 .43 5 1,200 15 10,000 1N6941UTK3, CS, AS .42 .50 .48 5 1,200 30 7,500 1N6942UTK3, CS, AS .40 .46 .48 .55 .59 .52 .

9、57 500 30 7,000 5 1,500 45 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examp

10、les. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications,

11、standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500

12、- S7emiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil or from the Standardization Document Ord

13、er Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

14、 document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/726C 3 Ltr Dimensions Inches Millimeters Min Max Min Max BL .420 .440 10.67 11

15、.18 BLT .125 3.18 BT .115 2.92 C .469 .509 11.91 12.93 E .038 NOM .97 NOM F .331 .341 8.41 8.66 LC .040 NOM 1.02 NOM LF .055 .075 1.40 1.91 LT .005 .015 .127 .381 LW .185 .215 4.70 5.46 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with A

16、SME Y14.5M, diameters are equivalent to x symbology. 4. For anode, cathode, and strap connections, see 3.4.1 and 3.4.3. FIGURE 1. Dimensions and configuration. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/726C 4 3. REQUIREMENTS 3.1 G

17、eneral. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualifie

18、d manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specif

19、ied in MIL-PRF-19500, and on figure 1 herein. 3.4.1 Diode construction. These devices shall be constructed utilizing double plug construction with eutectic bonding between both sides of the silicon die and terminal pins (see MIL-PRF-19500). Metallurgical bond shall be in accordance with the requirem

20、ents of category II in MIL-PRF-19500. The diode body is ceramic. All seals are eutectic solder. Strap material is a copper alloy or copper sandwich. The 1N6940UTK3, 1N6941UTK3 and 1N6942UTK3 have no strap. The strap connects to the cathode on 1N6940UTK3CS, 1N6941UTK3CS, and 1N6942UTK3CS and to the a

21、node on 1N6940UTK3AS, 1N6941UTK3AS, and 1N6942UTK3AS. 3.4.2 Lead formation and finish. Unless otherwise specified, lead finish (pads, bottom pad and strap foot) shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of lead finish or formation is desired, it sha

22、ll be specified in the acquisition document (see 6.2). 3.4.3 Polarity. Polarity shall be marked with the appropriate diode symbol on the strap or with a dot on the cathode side of the seal ring on “no strap” devices (see figure 1). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500 and h

23、erein. All marking may be omitted from the device except for the polarity marking. When present, part number may be abbreviated (ex: JS6940 for JANS1N6940UTK3). All marking that is omitted from the body of the device shall appear on the label of the initial container. 3.6 Electrical performance char

24、acteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be

25、processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (se

26、e 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Construction verification. Cross sectional photos from three devices shall be

27、submitted in the qualification report. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/726C 5 4.2.2 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only. In case qualification

28、was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein shall be performed on the first inspection lot to this revision to maintain qualification. * 4.3 Screening. Screening shall be in accordance with

29、table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3b C

30、ondition A, one pulse, IO= 0, VRWM= 0, IFSM= see 1.3, column 4 herein. Condition A, one pulse, IO= 0, VRWM= 0, IFSM= see 1.3, column 4 herein. 3c Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 4 Not applicable Not applicable 5 Not applicable Not applicable 7b Optional Optional 8 Seriali

31、zation required. Not applicable 9 Not applicable Not applicable 10 Not applicable Not applicable 11 VF1and IR1VF1and IR112 Method 1038 of MIL-STD-750, test condition A; TC= +125C, t = 240 hours, VRM= 80 percent of rated VRWM= see 1.3, column 2 herein V (pk), IO= 0, f = 60 Hz; alternate test: VRM= 80

32、 percent of rated VRWM(see 1.3, column 2 herein for VRWM), TC= +125C Method 1038 of MIL-STD-750, test condition A; TC= +125C, t = 48 hours, VRM= 80 percent of rated VRWM= see 1.3, column 2 herein V (pk), IO= 0, f = 60 Hz; alternate test: VRM= 80 percent of rated VRWM(see 1.3, column 2 herein for VRW

33、M), TC= +125C 13 Subgroup 2, of table I herein, and subgroup 3 of table I herein, VF1and IR1; VF1= 50 mV (pk); IR1= 1 mA dc or 100 percent from the initial value, whichever is greater. Scope display evaluation (see table I, subgroup 7) Subgroup 2, of table I herein excluding thermal impedance; VF1an

34、d IR1; VF1= 50 mV (pk); IR1= 1 mA dc or 100 percent from the initial value, whichever is greater. Scope display evaluation (see table I, subgroup 7) 14b Required Required 15 Not applicable Not applicable (1) Surge shall precede thermal impedance. These tests shall be performed anytime after screen 3

35、 and before screen 10. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750. See table E-IX, group E, subgroup 4 of MIL-PRF-19500. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4

36、.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/726C 6 4.4.2 Group B inspection. Group B inspection shall b

37、e conducted in accordance with the conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JANTX and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be i

38、n accordance with table III herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TJ= +85C minimum, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition B, IF= 1 A dc minimum, adjust TAand IFto achieve TJ= +150C, +0C, -35C, t = 240 hours min; (heat

39、 sinking allowed). 4.4.2.2 Group B inspection, table E-VIB (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TJ= +85C minimum, IF= 2 A minimum for 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgro

40、up testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. Subgroup Method Condition C5 3101 IH= 20 A to 50 A, IM= 10 mA to 250 mA, tH= thermal equilibrium;

41、tMD= 200 s maximum . C6 1037 TJ= +85C minimum, IF= 2 A minimum for 6,000 cycles. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and table II herein. Electrical measurements (end-points) s

42、hall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as

43、specified in section 4 of MIL-STD-750. 4.5.2 Avalanche energy test. The Schottky rectifier shall be capable of absorbing the reverse energy of 350 rectangular pulses, tp=1 sec, IR= 2 A at 1 kHz. This will be performed during wafer or die level prior to device assembly. Provided by IHSNot for ResaleN

44、o reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/726C 7 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3101 IM= 10 mA to 250 mA, IH=

45、 200 A, tH= 2 ms, tmd= 200 s maximum ZJX1N6940UTK3, CS, AS .12 C/W 1N6941UTK3, CS, AS .12 C/W 1N6942UTK3, CS, AS .12 C/W Forward voltage 4011 Pulsed test (see 4.5.1) tp= 300 s VF11N6940UTK3, CS, AS IF= 75 A (pk) .43 V 1N6941UTK3, CS, AS IF= 25 A (pk) .42 V 1N6942UTK3, CS, AS IF= 25 A (pk) .40 V Forw

46、ard voltage 4011 Pulsed test (see 4.5.1) tp= 300 s VF21N6940UTK3, CS, AS IF= 150 A (pk) .50 V 1N6941UTK3, CS, AS IF= 50 A (pk) .50 V 1N6942UTK3, CS, AS IF= 50 A (pk) .46 V Reverse current leakage 4016 DC method IR11N6940UTK3, CS, AS VR= 15 V 5.0 mA 1N6941UTK3, CS, AS VR= 30 V 5.0 mA 1N6942UTK3, CS,

47、AS VR= 45 V 5.0 mA Breakdown voltage 4021 Pulsed test (see 4.5.1) tp= 35 ms VBR11N6940UTK3, CS, AS IR= 50 mA (pk) 16.5 V 1N6941UTK3, CS, AS IR= 50 mA (pk) 33 V 1N6942UTK3, CS, AS IR= 50 mA (pk) 50 V Subgroup 3 High temperature Operation: TC= +125C Forward voltage 4011 Pulsed test (see 4.5.1) tp = 30

48、0 s VF31N6940UTK3, CS, AS IF= 150 A (pk) .43 V 1N6941UTK3, CS, AS IF= 150 A (pk) .50 V 1N6942UTK3, CS, AS IF= 110 A (pk) .50 V 1N6942UTK3, CS, AS IF= 150 A (pk) VF4.57 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-M

49、IL-PRF-19500/726C 8 TABLE I. Group A inspection Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 - continued. Reverse current leakage 4016 DC method IR21N6940UTK3, CS, AS VR= 15 V 1,200 mA 1N6941UTK3, CS, AS VR= 30 V 1,200 mA 1N6942UTK3, CS, AS VR= 30 V 500 mA Reverse current leaka