DLA MIL-PRF-19500 730 B-2013 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY DUAL CENTER TAP TYPES 1N7037CCU1 1N7043CAT1 1N7043CCT1 JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/730B 26 June 2013 SUPERCEDING MIL-PRF-19500/730A 14 December 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Depa

2、rtments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, schottky power rectifier diodes. Four le

3、vels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (U1) and figure 2 (TO-254AA). 1.3 Maximum ratings. Unless otherwise specified, maximum ratings (TA= +25C). Column 1 Column 2 Column 3 Column 4 Column 5 Column 6 Types (1)

4、VRWMIO (1) (2)TC = +100C IFSM (3)tp= 8.3 ms, TC= +25C RJC (2)RJC (3)TSTG and TJV dc A dc A (pk) C/W C/W C 1N7037CCU1 100 35 250 0.8 1.6 -65 to +150 1N7043CCT1 1N7043CAT1 100 35 175 1.15 2.3 (1) See temperature-current derating curves on figures 3 and 4. (2) For each package. (3) For each leg, see fi

5、gures 5 and 6. 1.4 Primary electrical characteristics. RJC= 0.8C/W maximum entire package for 1N7037CCU1, RJC= 1.15C/W maximum entire package for 1N7043CCT1 and 1N7043CAT1. AMSC N/A FSC 5961INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime

6、, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures

7、 necessary to comply with this revision shall be completed by 26 September 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/730B 2 Symbol Dimensions Inches Millimeters Min Max Min Max BL .620 .630 15.75 16.00 BW .445 .455 11.30 11.

8、56 CH .129 .139 3.28 3.53 LH .010 .020 0.26 0.51 LL1 .410 .420 10.41 10.67 LL2 .152 .162 3.86 4.12 LS1 .200 .220 5.08 5.59 LS2 .100 .110 2.54 2.79 LW1 .370 .380 9.40 9.65 LW2 .135 .145 3.43 3.68 Q1 .030 0.76 Q2 .035 0.89NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general informa

9、tion only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration 1N7037CCU1. U11 2 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/730B 3 1N7043CCT1 1N7043CAT1 TERM 1 = ANOD

10、E TERM 1 = CATHODE TERM 2 = CATHODE TERM 2 = ANODE TERM 3 = ANODE TERM 3 = CATHODE NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration 1N7043CAT1

11、and 1N7043CCT1 (TO-254AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .0

12、50 1.02 1.27 TW .535 .545 13.59 13.84 TO-254 1N7043CCT1 1N7043CAT12 2 1 3 1 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/730B 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3,

13、4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet al

14、l specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specif

15、ied herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor D

16、evices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract,

17、 in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The ind

18、ividual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers

19、 list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-

20、19500, and on figure 1 (U1) and figure 2 herein. Methods used for electrical isolation of the terminal feedthroughs for the TO-254 shall employ materials that contain a minimum of 90 percent Al2O3(ceramic). 3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 and

21、figure 2 herein. 3.4.2 Lead material, finish, and formation. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead formation, material, or finish is desire

22、d, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of table E-IV of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 herein. Pro

23、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/730B 5 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and table I herein. 3.6 Electrical tes

24、t requirements. The electrical test requirements shall be as specified in tables I and II herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from o

25、ther defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I

26、 and II herein). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revis

27、ion of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo rep

28、roduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/730B 6 * 4.3 Screening (JANS, JANTXV and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein.

29、 Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3b Condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. Condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM=

30、see 1.3 herein. (1) 3c Thermal impedance (see 4.3.2). Thermal impedance (see 4.3.2). 3d Avalanche energy test (see 4.3.3). Avalanche energy test (see 4.3.3). 9, 10 Not applicable. Not applicable. 11 VF1and IR1VF1and IR112 See 4.3.1, 240 hours, minimum. See 4.3.1, 48 hours minimum. 13 Subgroup 2 and

31、3, of table I herein, VF1and IR1, excluding thermal impedance; VF1= 50 mV (pk); IR1= 100 percent from the initial value or 500 uA, whichever is greater. Subgroup 2, of table I herein excluding thermal impedance; VF1and IR1; VF1= 50 mV (pk); IR1= 100 percent from the initial value or 500 uA, whicheve

32、r is greater. 14 Required. Required. 15 Required. Not applicable. 16 Required. Not applicable. (2) 17 Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. (1) Thermal impedance shall be perfo

33、rmed any time after screen 3. (2) Not applicable for U1 package. 4.3.1 Power burn-in conditions. Burn-in conditions are as follows: Method 1038 of MIL-STD-750, test condition A. TJ= +125C; VR= 80 V dc. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

34、method 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD. Measurement delay time (tMD) = 70 s max. See TABLE III, subgroup 4, and figures 5 and 6. 4.3.3 Avalanche energy test. The avalanche energy test is to be performed in accordance with method 406

35、4 of MIL-STD-750 using the circuit as shown on figure 7 or equivalent. The Schottky rectifier under test shall be capable of absorbing the reverse energy, as follows: IAS= 1A, Vbr = 100 V minimum, L = 100 H. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

36、IHS-,-,-MIL-PRF-19500/730B 7 * 4.3.4 Dielectric withstanding voltage. a. Magnitude of test voltage900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltageAll leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere

37、rating of high voltage source1,200V /1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500V /second. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with

38、 appendix E, table E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified fo

39、r subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accorda

40、nce with table II herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition A, VR= 80 V dc, TJ= +125C, t = 340 hours minimum; heat sinking allowed. This test shall be extended to 1,000 hour

41、s for each wafer. As an alternative method a ten (10) dice sample (or 1 die per wafer whichever is greater) from each individual wafer shall be qualified for 1,000 hours minimum then each screened inspection lot requires 340 hours minimum when selected from qualified wafers. 4.4.2.2 Group B inspecti

42、on, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/730B 8 4.4.3 Group C inspection. Group C inspection

43、 shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in

44、 accordance with table II herein. Subgroup Method Condition B4 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. C2 2036 Condition A, weight = 10 lbs, t = 15 seconds. Not applicable to U1 package. C5 4081 Limit for thermal resistance for 1N7037 is 1.6C/W for each diode. Limit for thermal resistance f

45、or 1N7043 is 2.3C/W for each diode. C6 1037 TC= +85C, IF= 2 A minimum for 6,000 cycles. C6 1038 Condition A, VR= 80 V dc, TJ= +125C, t = 340 hours minimum (for TX, TXV only); heat sinking allowed. This test shall be extended to 1,000 hours for each wafer. As an alternative method a ten (10) dice sam

46、ple (or 1 die per wafer whichever is greater) from each individual wafer shall be qualified for 1,000 hours minimum then each screened inspection lot requires 340 hours minimum when selected from qualified wafers. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the

47、 tests and conditions specified for subgroup testing in table E-IX of MIL-PRF-19500, and table II herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in s

48、ection 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/730B 9 * TABLE I. Group A inspection. Inspection 1/ 2/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3/ 3101 See 4.3.2 ZJXC/W Forward voltage 4011 Pulsed test (see 4.5.1) VF11N7037 1N7043 IF= 15A (pk) IF= 15A (pk) .90 .95 V V Forward voltage 4011 Pulsed test (see 4.5.1) VF21N7037 1N7043 IF= 35 A(pk) IF= 35 A(pk)