DLA MIL-PRF-19500 745 D-2012 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) LOGIC-LEVEL SILICON TYPES 2N7626UB 2N76 .pdf

1、 MIL-PRF-19500/745D 27 August 2012 SUPERSEDING MIL-PRF-19500/745C 13 May 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JAN

2、TXVR, JANTXVF, JANSR, AND JANSF This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers

3、the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE), low-threshold logic level, MOSFET, transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum

4、 rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1, UB and UBC (UB with ceramic lid). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) TA=+25C PT(infinite sink) TIS=+25C RJA(2) VDSVGSID1 (3) (4) ID2

5、TA=+100C (3) (4) ISIDM (5) TJand TSTG2N7626UB,UBC, UBN, UBCN mW 570 W 1.25 C/W 220 V dc -60 V dc 10 A dc -0.53 A dc -0.33 A dc -0.53 A (pk) -2.12 C -55 to +150 (1) Derate linearly by 4.5 mW/C for TA +25C (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theore

6、tical IDlimit. IDis limited by package and internal construction: (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O

7、. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to co

8、mply with this revision shall be completed by 27 December 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/745D 2 1.4 Maximum ratings. Unless otherwise specified, TC= +25C. Type Min V(BR) DSSVGS (th)1Max IDSS1Max rDS(on)(1) VGS= -4

9、.5 V dc EASIASVGS= 0 V ID= -250 A dc VDS= VGS ID= -250 A dc VGS= 0 V VDS = 80% rated VDS at ID2 TJ= +25C TJ= +150C 2N7626UB,UBC, UBN, UBCN V dc -60 V dc Min Max -1.0 -2.0 A dc -1.0 Ohm 1.40 Ohm 2.03 mJ 3.5 A dc -1.0 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in

10、 this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document

11、 users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

12、 part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL

13、-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence

14、. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has

15、been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/745D 3 FIGURE 1. Physical dimensions, surface mount (UB, UBN, UBC and UBCN versions). Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

16、om IHS-,-,-MIL-PRF-19500/745D 4 Dimensions Symbol Inches Millimeters Note Min Max Min Max BL .115 .128 2.92 3.25 BW .095 .108 2.41 2.74 BH .046 .056 1.17 1.42 UB only, 4 BH .046 .056 1.17 1.42 UBN only, 5 BH .055 .069 1.40 1.75 UBC only, 6 BH .055 .069 1.40 1.75 UBCN only, 7 CL .128 3.25 CW .108 2.7

17、4 LL1 .022 .038 0.56 0.97 3 PLS LL2 .014 0.356 3 PLS LS1.035 .039 0.89 0.99 LS2.071 .079 1.80 2.01 LW .016 .024 0.41 0.61 r .008 0.20 6 r1 .012 0.30 8 r2 .022 0.56 UB TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS=

18、 rated VDS; TA= +175C, t = 120 hours minimum; or TA= +150C, t = 240 hours minimum. B5 2037 Condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/745D 9 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup M

19、ethod Condition B2 1051 Test condition C, 25 cycles. B3 1042 Intermittent operation life, condition D, 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electr

20、ical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Terminal strength is not applicable. C5 3161 See 4.3.3, RJA= (see 1.3). C6 1042 Intermittent operation life, condition D, 6,000 cycles. 4.4.4 Group D inspection. Group D inspectio

21、n shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical

22、measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-

23、750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/745D 10 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Condition Min Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Thermal impeda

24、nce 2/ 3161 See 4.3.3 ZJAC/W Breakdown voltage drain to source 3407 VGS= 0, ID= -250 A dc, bias condition C V(BR)DSS-60 V dc Gate to source voltage (threshold) 3403 VDS VGS, ID= -250 A dc VGS(TH)1-1.0 -2.0 V dc Gate current 3411 VGS= -10 V dc, bias condition C, VDS= 0 IGSSF1-100 nA dc Gate current 3

25、411 VGS= +10 V dc, bias condition C, VDS= 0 IGSSR1+100 nA dc Drain current 3413 VGS= 0, bias condition C, VDS= 80 percent of rated VDSIDSS1-1.0 A dc Static drain to source on-state resistance 3421 VGS= -4.5 V dc, condition A, pulsed (see 4.5.1), ID= ID2rDS(ON)11.40 Forward voltage 4011 VGS= 0, condi

26、tion A, pulsed (see 4.5.1), ID= ID1 VSD-5.0 V (pk) Subgroup 3 High temperature operation: TC= TJ= +125C Gate current 3411 VGS= 10 V dc, bias condition C, VDS= 0 IGSS2200 nA dc Drain current 3413 VGS= 0, bias condition C, VDS= 80 percent of rated VDS IDSS2-10 A dc Static drain to source on-state resi

27、stance 3421 VGS= -4.5 V dc, condition A, pulsed (see 4.5.1), ID= ID2 rDS(ON)21.93 Gate to source voltage (threshold) 3403 VDS= VGS, ID= -250 A dc VGS(TH)2-0.5 V dc Low temperature operation: TC= TJ= -55C Gate to source voltage (threshold) 3403 VDS VGS, ID= -250 A dc VGS(TH)3-3.0 V dc See footnotes a

28、t end of table. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/745D 11 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Condition Min Max Subgroup 4 Forward transconductance 3475 VDS= -10

29、 V dc, ID= ID2, pulsed (see 4.5.1) gFS0.8 S Gate series resistance 3402 Condition A. RG41 70 Subgroup 5 Safe operating area test 3474 VDS= 80 percent of rated VDS(see 1.3) tP= 10 ms, IDas specified on figure 4 Electrical measurements See table I, subgroup 2 Subgroup 6 Not applicable Subgroup 7 Gate

30、charge 3471 Condition B, ID= ID1, VDD= 50 percent rated VDSOn-state gate charge QG(on)3.6 nC On Gate to source charge QGS1.5 nC On Gate to drain charge QGD1.8 nC Turn-off gate charge QG(on)3.6 nC Off Gate to source charge QGS1.5 nC Off Gate to drain charge QGD1.8 nC Reverse recovery time 3473 di/dt

31、= -100 A/s, VDD -25 V, ID= ID1trr 50 ns 1/ For sampling plan, see MIL-PRF-19500. 2/ This test required for the following end-point measurements only: Group B, subgroups 3 and 4 (JANS). Group B, subgroups 2 and 3 (JANTXV). Group C, subgroup 2 and 6. Group E, subgroup 1. Provided by IHSNot for ResaleN

32、o reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/745D 12 TABLE II. Group D inspection. Inspection MIL-STD-750 Symbol Pre-irradiation limits Post-irradiation limits Post-irradiation limits Unit 1/ 2/ 3/ R VDS= 80 percent of rated VDS (preirradiation) End-point electri

33、cals: Breakdown voltage, drain to source 3407 VGS= 0; ID= -250 A; bias condition C V(BR)DSS-60 -60 -60 V dc Gate to source voltage (threshold) 3403 VDS VGSID= -250 A VGS(th)1-1.0 -2.0 -1.0 -2.0 -1.0 -2.0 V dc Gate current 3411 VGS= -10 V, VDS= 0, bias condition C IGSSF1-100 -100 -100 nA dc Gate curr

34、ent 3411 VGS= +10 V, VDS= 0, bias condition C IGSSR1+100 +100 +100 nA dc Drain current 3413 VGS= 0, bias condition C VDS= 80 percent of rated VDS(preirradiation) IDSS-1.0 -1.0 -1.0 A dc Static drain to source on-state voltage 3405 VGS= -4.5 V; condition A, pulsed (see 4.5.1), ID1= ID2VDS(on)0.449 0.

35、449 0.449 V dc Forward voltage source drain diode 4011 VGS = 0; ID= ID1bias condition C VSD-5.0 -5.0 -5.0 V dc 1/ For sampling plan see MIL-PRF-19500. 2/ Group D qualification may be performed prior to lot formation. Wafers qualified to these group D QCI requirements may be used for any other specif

36、ication sheets utilizing the same die design. 3/ At the manufacturers option, group D samples need not be subjected to the screening tests, and may be assembled in its qualified package or in any qualified package that the manufacturer has data to correlate the performance to the designated package.

37、 4/ Separate samples shall be pulled for each bias. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/745D 13 TABLE III. Group E inspection (all quality levels) - for qualification or re-qualification only. Inspection MIL-STD-750 Sample M

38、ethod Conditions plan Subgroup 1 Temperature cycling 1051 Condition G, 500 cycles 45 devices c = 0 Hermetic seal Fine leak Gross leak Electrical measurements 1071 See table I, subgroup 2 Subgroup 2 1/ Steady-state gate bias Electrical measurements 1042 Condition B, 1,000 hours See table I, subgroup

39、2 45 devices c = 0 Steady-state reverse bias Electrical measurements 1042 Condition A, 1,000 hours See table I, subgroup 2 Subgroup 3 Switching time test 3472 ID= ID1, VGS= -5 V dc, RG= 24, VDD= 50 percent rated VDSMaximum measurements: td(on) = 22 ns; tr = 22 ns; td(off) = 27 ns; tf = 27 ns 45 devi

40、ces c = 0 Subgroup 4 Thermal impedance curves 3161 See MIL-PRF-19500. Sample size N/A Subgroup 10 Commutating diode for safe operating area test procedure for measuring dv/dt during reverse recovery of power MOSFET transistors or insulated gate bipolar transistors 3476 Test conditions shall be deriv

41、ed by the manufacturer. 22 devices c = 0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/745D 14 TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only - Continued. M

42、IL-STD-750 Sample Inspection Method Conditions plan Subgroup 11 3 devices SEE 2/ 3/ 4/ 1080 See figure 5 Electrical measurements 5/ IGSSF1, IGSSR1, and IDSS1in accordance with table I, subgroup 2 SEE irradiation Fluence = 3E5 20 percent ions/cm2Flux = 2E3 to 2E4 ions/cm2/sec, temperature = 25 5 C Su

43、rface LET = 38 MeV-cm2/mg 5%, range = 38 m 7.5%, energy = 300 MeV 7.5% In-situ bias conditions: VDS= -60 V and VGS= 6 V In-situ bias conditions: VDS= -50 V and VGS= 7 V (typical 3.75 MeV/nucleon at Texas A 38m7.5%; 300MeV7.5%LET=625%; 33m7.5%; 355MeV7.5%LET=855%; 29m7.5%; 380MeV10%Provided by IHSNot

44、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/745D 18 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-

45、house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Points packaging activities within the Military Service or Defense Agency, or within the Military Service

46、s system commands. Packaging data retrieval is available from the managing Military Departments or Defense Agencys automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may

47、be helpful, but is not mandatory. The notes specified in MIL-PRF-19500 are applicable to this specification.) 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. 6.2 Acquisition requirem

48、ents. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). d. Product assurance level and type designator. * 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not such products have actually been so lis