DLA MIL-PRF-19500 749 A B-2010 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) SILICON TYPES 2N7506U8 AND 2N7506U8C .pdf

1、 MIL-PRF-19500/749B 21 May 2010 SUPERSEDING MIL-PRF-19500/749A 16 July 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF This

2、 specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for P-c

3、hannel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5

4、for JANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1, surface mount SMD-0.2, for U8 (metal lid) and U8C (ceramic lid). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(1) TC= +25C PTTA= +25C RJC(2) VDSVDGVGSID1(3) (4) TC=+25C ID2(3) (4) TC= +100C ISIDM (5) TJand

5、TSTG2N7506U8, 2N7506U8C W 23 W 1.0 C/W 5.4 V dc -100 V dc -100 V dc 20 A dc -3.1 A dc -2.0 A dc -3.1 A (pk) -12.4 C -55 to +150 (1) Derate linearly by 0.185 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by

6、 package and internal construction. (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Col

7、umbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDThe documentation and process co

8、nversion measures necessary to comply with this revision shall be completed by 21 August 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/749B 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 VGS(TH)1VD

9、S VGSMax IDSS1VGS= 0 Max rDS(on)(1) VGS= 12V, ID= ID2EAS IAS ID= 1.0mA dc ID= 1.0 mA dc VDS= 80% of rated VDSTJ= +25C TJ= +150C 2N7506U8, 2N7506U8C V dc -100 V dc Min Max -2.0 -4.0 A dc 10 1.20 2.40 mJ 28 A -3.1 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in thi

10、s section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document use

11、rs are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a par

12、t of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD

13、-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of prec

14、edence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemptio

15、n has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/749B 3 Symbol Dimensions Note Inches Millimeters Min Max Min Max BL .305 .321 7.75 8.15 BW .200 .226 5.08 5.74 CH (for U8) .097 2.46 U8 only CH (for U8C) .106 2.69 U8C

16、 only LW1 .193 .203 4.90 5.16 LW2 .076 .086 1.93 2.18 LL1 .174 .184 4.42 4.67 LL2 .074 .084 1.88 2.13 Q1 .030 .040 0.76 1.02 Q2 .030 .040 0.76 1.02 Q3 0.10 REF 0.25 REF Q4 0.10 REF 0.25 REF TERM 1 Drain TERM 2 Gate TERM 3 Source NOTES: 1. Dimensions are in inches. 2. Millimeters are given for genera

17、l information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for SMD-0.2, 2N7506U8 and 2N7506U8C. * Provided by IHSNot for ResaleNo reproduction or networking p

18、ermitted without license from IHS-,-,-MIL-PRF-19500/749B 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufactu

19、rer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows.

20、IASRated avalanche current, non-repetitive nC nano Coulomb. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (SMD-0.2, U8 and U8C) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-195

21、00, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. Metal oxide semiconductor

22、(MOS) devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personn

23、el handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not mo

24、re than maximum rated voltage to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and t

25、able I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of the country of origin may be omitted from the body of the transistor but shall be

26、 retained on the initial container. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted w

27、ithout license from IHS-,-,-MIL-PRF-19500/749B 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qual

28、ification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification

29、sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1.1 SEE. Design capability shall be tested on the initia

30、l qualification and thereafter whenever a major die design or process change is introduced. Electrical measurements (end-points) shall be in accordance with table III. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/749B 6 4.3 Screening

31、 (JANS and JANTXV). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of

32、MIL-PRF-19500) (1) (2) JANS level JANTXV levels (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAS(see 4.3.2) Method 3470 of MIL-STD-750, EAS(see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) Method 3161 of MIL-STD-750, therma

33、l impedance, (see 4.3.3) 9 Subgroup 2 of table I herein, IGSSF1, IGSSR1, IDSS1as a minimum Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1Subgroup 2 of table I herein IGSSF1= 20 nA dc or 100 perc

34、ent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1Subgroup 2 of table I herein 12 Method 1042 of MIL-STD-750, test conditio

35、n A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater

36、. rDS(on)1=20 percent of initial value VGS(th)1= 20 percent of initial value Subgroups 2 and 3 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial va

37、lue, whichever is greater. rDS(on)1=20 percent of initial value VGS(th)1= 20 percent of initial value (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed an

38、ytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/749B 7 4.3.1 Gate stress test. Apply VGS= 24 V, minimum for t = 250 sec., minimum. 4

39、.3.2 Single pulse avalanche energy (EAS). a. Peak current IAS= ID1. b. Inductance . L = ( )212EIV VVASDBR DDBRmH minimum. c. Gate to source resistor RGS: . 25 RGS 200 . d. Supply voltage VDD= 50 V dc maximum. e. Initial case temperature . TC= +25 C, -5 C, +10 C. f. Gate voltage . VGS= 12 V dc (up to

40、 rated VGS). g. Number of pulses to be applied: . 1 pulse minimum. 4.3.3 Thermal impedance (ZJCmeasurement). The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropria

41、te). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and tab

42、le I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subg

43、roup 2 herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B4 1042 Intermittent operation life, condition D, 2,000 cycles. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton

44、= 30 seconds minimum. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated; TA= +175C, t = 120 hours minimum; or TA= +150C, t = 240 hours minimu

45、m. B5 2037 Test condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/749B 8 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. B3 1042 Intermittent o

46、peration life, condition D, 2,000 cycles. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII

47、of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Terminal strength is not applicable. C5 3161 Thermal resistance, see 4.5.2, RJC(max)= 5.4 C/W. C6 1042 Intermittent operation life, conditio

48、n D, 6,000 cycles. No heat sink or forced air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Meth