DLA MIL-PRF-19500 752-2010 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) LOGIC-LEVEL SILICON TYPE 2N7608T2 JANTXVR.pdf

1、 MIL-PRF-19500/752 2 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPE 2N7608T2, JANTXVR, JANTXVF, JANSR, AND JANSF This specification is approved for use by all Depa

2、rtments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened

3、 (total dose and single event effects (SEE), low-threshold logic level, MOSFET, transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). 1.2 Physical dimensions. See fi

4、gure 1, TO-39 (TO-205AF). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) TC=+25C PTTA=+25C RJC(2) VDSVGSID1 TC=+25C (3) (4) ID2 TC=+100C (3) (4) ISIDM (5) TJand TSTG2N7608T2 W 23 W 0.63 C/W 5.5 V dc 100 V dc 10 A dc 6.0 A dc 3.7 A dc 6.0 A (pk) 24 C -55 to +150 (1) Derate line

5、arly by 0.18 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited to 12 A by package and internal construction. (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). AMSC N/A F

6、SC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency o

7、f this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/752 2 1.4 Maximum ratings. Unless otherwise specified, TC=

8、 +25C. Type Min V(BR) DSSVGS (th)1Max IDSS1Max rDS(on)(1) VGS= 4.5 V dc EASIASVGS= 0 V ID= 250 A dc VDS= VGS ID= 250 A dc VGS= 0 V VDS = 80% rated VDS TJ= +25C at ID2 TJ= +150C at ID2 2N7608T2 V dc 100 V dc Min Max 1.0 2.0 A dc 1.0 Ohm 0.30 Ohm 0.65 mJ 43 A dc 6 (1) Pulsed (see 4.5.1). 2. APPLICABLE

9、 DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to

10、 ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following

11、specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specifi

12、cation for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D

13、, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicabl

14、e laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/752 3 Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 CH .160 .180 4.06 4.57 HD .335 .3

15、70 8.51 9.39 LC .200 TP 5.08 TP 6 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.7 19.05 7, 8 LU .016 .019 0.41 0.48 7, 8 L1.050 1.27 7, 8 L2.250 6.35 7, 8 P .100 2.54 5 Q .050 1.27 4 r .010 0.25 9 TL .029 .045 0.74 1.14 3 TW .028 .034 0.71 0.86 2 45 TP 45 TP 6 NOTES: 1. Dimensions are in inches. Milli

16、meters are given for general information only. 2. Beyond radius (r) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 3. Dimension TL measured from maximum HD. 4. Outline in this zone is not controlled. 5. Dimension CD shall not vary more than .010 inch (0.25 mm) in zone P. This

17、 zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. LU applies between L1and L2. LD applie

18、s between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical d

19、imensions for TO-205AF (2N7608T2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/752 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Dev

20、ices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symb

21、ols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-7

22、50, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protectio

23、n. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. The following handling practices shall be followed: a. Devices shall be handled on benches wit

24、h conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical.

25、g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein,

26、 the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in

27、 quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/752 5 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements spe

28、cified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qual

29、ification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in th

30、e prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1.1 SEE. Design capability shall be tested on the initial qualification and thereafter whenever a major die design or process change is introduced (see table III). End-point measurements s

31、hall be in accordance with table II. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/752 6 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. T

32、he following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) (1) (2) JANS JANTXV (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470

33、of MIL-STD-750, EAS(see 4.3.2) Method 3470 of MIL-STD-750, EAS(see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) 9 Subgroup 2 of table I herein Not applicable IDSS1, IGSSF1, IGSSR1as minimum 10 Method 1042 of MIL-S

34、TD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 1

35、A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of i

36、nitial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 1 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. Subgroup 2 of table I herein IGSSF1 = 20

37、nA dc or +100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 1 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. (1) At the end

38、of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. Provided by I

39、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/752 7 4.3.1 Gate stress test. Apply VGS= 15 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current (IAS) ID1. b. Peak gate voltage (VGS) 10 V dc, up to rated VGS. c

40、. Gate to source resistor (RGS) 25 RGS 200 . d. Initial case temperature +25C, +10C, -5C. e. Inductance: . ( )212EIV VVASDBR DDBRmH minimum. f. Number of pulses to be applied 1 pulse minimum. g. Supply voltage (VDD) . 25 V dc. 4.3.3 Thermal impedance. The thermal impedance measurements shall be perf

41、ormed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accor

42、dance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I herein. 4.4.2 Group B inspection. Group B inspection shall be con

43、ducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIA (J

44、ANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated VGS; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated

45、VDS; TA= +175C, t = 120 hours minimum; or TA= +150C, t = 240 hours minimum. B5 2037 Test condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/752 8 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Meth

46、od Condition B2 1051 Test condition C, 25 cycles. B3 1042 Accelerated steady-state gate bias, condition B, VGS= rated VGS; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum; and accelerated steady-state reverse bias, condition A, VDS= rated VDS; TA= +175C, t = 170 hours minimum; or

47、 TA= +150C, t = 340 hours minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 her

48、ein. Subgroup Method Condition C2 2036 Test condition E. C5 3161 See 4.5.2, RJC= (see 1.3). C6 1042 Accelerated steady-state gate bias, condition B, VGS= rated VGS; TA= +175C, t = 48 hours minimum; or TA= +150C, t = 96 hours minimum. and accelerated steady-state reverse bias, condition A, VDS= rated VDS; TA= +175C, t = 500 hours minimum; or TA= +150C, t = 1,000 hours minimum. 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.5 Group E inspection. Group E inspection shall be conducted in acc