DLA MIL-PRF-19500 754 D-2009 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY DUAL COMMON CATHODE TYPE 1N7064CCU3 and 1N7064CCU3C JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/754 13 August 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, TYPE 1N7064CCU3 and 1N7064CCU3C, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. T

2、he requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, Schottky center tap power rectifier diodes for use in high frequency switching power supplie

3、s and resonant power converters. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, U3 and U3C (ceramic lid) package. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Column 1 Column 2 Column 3 Column 4 C

4、olumn 5 Column 6 Types VRWMIO(1)(2) TC = +100C IFSM (3)tp= 8.3 ms TC= +25C RJC (2) RJC(3) TSTGand TJV dc A dc A (pk) C/W C/W C 1N7064CCU3 1N7064CCU3C 45 30 85 1.75 3.5 -65 to +150 (1) See temperature-current derating curves on figure 2. (2) Entire package. (3) Each leg. 1.4 Primary electrical charac

5、teristics. RJC= 1.75C/W maximum entire package; RJC= 3.5C/W maximum each leg (figure 3). AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to sem

6、iconductordscc.dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-195

7、00/754 2 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration, 1N7064CCU3 and 1N7064CCU3C. Ltr Dimensions Note Inches Millimeters Min Max Min Max B

8、L .395 .405 10.03 10.29 BW .291 .301 7.39 7.65 CH .108 .122 2.74 3.12 U3 Only CH .1195 .1335 3.035 3.39 U3C Only LH .010 .020 0.25 0.51 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.92 3.18 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 Q1 .030 0.76 Q2 .030 0.7

9、6 1N7064CCU3 1N7064CCU3C U3 1 3 2 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/754 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section d

10、oes not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited i

11、n sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the i

12、ssues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are availa

13、ble online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict betw

14、een the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall

15、be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract awar

16、d (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 herein. 3

17、.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 herein. 3.4.2 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.

18、2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II herein. 3.7 Mark

19、ing. Marking shall be in accordance with MIL-PRF-19500 and herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reprodu

20、ction or networking permitted without license from IHS-,-,-MIL-PRF-19500/754 4 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4

21、and tables I and II herein). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a

22、 prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANS, JA

23、NTXV, and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (table E-IV of MIL-PRF-1950

24、0) Measurement JANS level JANTX and JANTXV levels 3b Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. Method 4066 of MIL-STD-750, condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. 3c Thermal impedance (see 4.3.2). Thermal

25、 impedance (see 4.3.2). 3d Avalanche energy test (see 4.3.3). Avalanche energy test (see 4.3.3). 9, 10 Not applicable. Not applicable. 11 VF1and IR1.VF1and IR1.12 See 4.3.1. See 4.3.1. 13 Subgroup 2 and 3, of table I herein, VF1and IR1; VF2= 50 mV (pk); IR1= 100 percent from the initial value or 10

26、uA, whichever is greater. Subgroup 2, of table I herein; VF1and IR1; VF2= 50 mV (pk); IR1= 100 percent from the initial value or 10 uA, whichever is greater. 4.3.1 High temperature reverse bias. Reverse bias conditions are as follows: Method 1038 of MIL-STD-750, test condition A, VR= 36 V dc; TJ= +1

27、25C. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD. Measurement delay time (tMD) = 70 s max. See table III, subgroup 4, and figure 3 herein. 4.3.3 Av

28、alanche energy test. The avalanche energy test is to be performed in accordance with method 4064 of MIL-STD-750 using the circuit as shown on figure 4 or equivalent. The Schottky rectifier under test must be capable of absorbing the reverse energy, as follows: IAS= 1A, Vbr = 45 V minimum, L = 100 H.

29、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/754 5 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with tabl

30、e E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testin

31、g in tables E-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II

32、 herein. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition A, VR= 36 V dc, TJ= +125C, t = 340 hours min; heat sinking allowed. This test shall be extended to 1,000 hours for each wafer lot.

33、 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table

34、E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition C2 2036 Not required. C5 4081 Limi

35、t for thermal resistance is 3.5C/W for each diode. C6 1037 TC= +85C, IF= 2 A minimum for 6,000 cycles. C6 1038 Condition A, VR= 36 V dc, TJ= +125C, t = 1,000 hours min; heat sinking allowed. (for TX and TXV only). 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the

36、 tests and conditions specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Delta measurements shall be in accordance with table II herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurem

37、ents. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/754 6 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions

38、Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Forward voltage 4011 Pulsed test (see 4.5.1) VF1IF= 10 A (pk) 0.68 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF2IF= 15 A (pk) 0.80 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF3IF= 30 A (pk) 1.09 V dc Reverse current

39、 4016 DC method; VR= 45 V IR10.08 mA dc Subgroup 3 High temperature operation: TC= +125 C Forward voltage 4011 Pulsed test (see 4.5.1) VF4IF= 10 A (pk) 0.62 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF5IF= 15 A (pk) 0.72 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF6IF= 30 A (pk) 0.95

40、 V dc Reverse current 4016 DC method; IR2VR= 45 V 10.0 mA dc Low temperature operation: TC= -55C Forward voltage 4011 Pulsed test (see 4.5.1) VF7 IF= 10 A (pk) 0.72 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF8 IF= 15 A (pk) 0.81 V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF9 IF= 30 A

41、 (pk) 1.09 V dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/754 7 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 4 Junction cap

42、acitance 4001 VR= 5 V dc, f = 1 MHz, VSIG= 50 mV (p-p) CJ375 pF Subgroup 5 Not applicable Subgroup 6 Surge 4066 See 1.3, column 4 herein, ten surges each diode. 60 seconds between surges, (see 4.5.1) Electrical measurements See table I, subgroup 2 herein Subgroup 7 Dielectric withstanding voltage 3/

43、 1016 VR= 500 V dc; all leads shorted; measure from leads to case DWV 10 A Scope display evaluation 4023 Stable only Electrical measurements See table I, subgroup 2 herein 1/ For sampling plan, see MIL-PRF-19500. 2/ Electrical characteristics apply to all package styles and polarities. 3/ Not requir

44、ed for IN7064CCU3C Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/754 8 TABLE II. Groups B, C, and E delta requirements. 1/ 2/ 3/ 4/ 5/ 6/ Step Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max 1. Forward voltage 4011

45、 VF250 mV dc from initial reading. IF= 15 A (pk) pulsed (see 4.5.1) 2. Reverse current 4016 VR= 45 VdcIR1100 pecent from initial reading or 10uA whichever is greater. 3. Thermal impedance 3101 See 4.3.2 ZJX1/ Each individual diode. 2/ The electrical measurements for table E-VIa (JANS) of MIL-PRF-195

46、00 are as follows: a. Subgroup 4, see table II herein, steps 1, 2, and 3. b. Subgroup 5, see table II herein, steps 1 and 2. 3/ The electrical measurements for table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1, 2, and 3. b. Subgroup 3, see ta

47、ble II herein, steps 1, 2, and 3. c. Subgroup 6, see table II herein, steps 1 and 2. 4/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: a. Subgroups 2 and 3, see table II herein, steps 1, 2, and 3 for all levels. b. Subgroup 6, see table II herein, steps 1, 2, and 3 for

48、all levels. 5/ Devices which exceed the table I limits for this test shall not be accepted. 6/ The electrical measurements for table E-IX of MIL-PRF-19500 are as follows: a. Subgroup 1, see table III herein, steps 1, 2, and 3. b. Subgroup 2, see table III herein, steps 1 and 2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/754 9 TABLE III. Group E inspection (all quality levels) for qualification and requalification only. Inspection MIL-STD-750 Qualification Method Conditions Subgroup 1 n = 12, c = 0 Temperature cycling (