DLA MIL-PRF-19500 757 A-2011 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) LOGIC-LEVEL SILICON TYPES 2N7624U3 AND .pdf

1、 MIL-PRF-19500/757A 11 April 2011 SUPERSEDING MIL-PRF-19500/757 30 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7624U3 AND 2N7625T3, JANTXVR, JANTXVF, JANSR,

2、AND JANSF This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requir

3、ements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE), low-threshold logic level, MOSFET, transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maxi

4、mum avalanche current (IAS). 1.2 Physical dimensions. See figure 1, TO-257AA (T3) and figure 2, SMD.5 TO-276AA (U3). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) TC=+25C PTTA=+25C RJC(2) VDSVGSID1 TC=+25C (3) (4) ID2 TC=+100C (3) (4) ISIDM (5) TJand TSTG2N7625T3 2N7624U3 W 7

5、5 57 W 1.56 1.00 C/W 1.67 2.20 V dc -60 -60 V dc 10 10 A dc -20 -22 A dc -17 -14.9 A dc -20 -22 A (pk) -80 -88 C -55 to +150 (1) Derate linearly by 0.60 mW/C (2N7625T3) for TC +25C; by 0.45 mW/C (2N7624U3) for TC +25C (2) See figure 3, thermal impedance curves. (3) The following formula derives the

6、maximum theoretical IDlimit. IDis limited by product design and construction (package, internal wires and pin diameter) to 20 A (T3), to 22 A (U3). (4) See figure 4, maximum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJ

7、CCJMD* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using

8、 the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 July 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/757

9、A 2 1.4 Maximum ratings. Unless otherwise specified, TC= +25C. Type Min V(BR) DSSVGS (th)1Max IDSS1Max rDS(on)(1) VGS= 4.5 V dc EASIASVGS= 0 V ID= 250 A dc VDS= VGS ID= 250 A dc VGS= 0 V VDS = 80 percent rated VDS at ID2 TJ= +25C TJ= +150C 2N7625T3 2N7624U3 V dc -60 -60 V dc Min Max -1.0 -2.0 -1.0 -

10、2.0 A dc -1.0 -1.0 Ohm 0.072 0.070 Ohm 0.108 0.103 mJ 181 79 A dc -20 -22 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of t

11、his specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether o

12、r not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solici

13、tation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch

14、/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references

15、cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/757A

16、3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from the case. 4. This area is for the lead feed-thru eyelets (configuration is optional, but will not extend beyond this zone). 5. In accordance with ASME Y14.5M, diameters are

17、 equivalent to x symbology. FIGURE 1. Dimensions and configuration, TO-257AA (T3). Ltr Inches Millimeters Min Max Min Max BL .410 .420 10.41 10.67 BL1.033 0.84 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .600 .650 15.24 16.51 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO

18、 .527 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Drain Term 2 Source Term 3 Gate Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/757A 4 Symbol Dimensions Inches Millimeters Min Max M

19、in Max BL .395 .405 10.04 10.28 BW .291 .301 7.40 7.64 CH .124 3.15 LH .010 .020 0.25 0.51 LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.93 3.17 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC Q1 .030 0.762 Q2 .030 0.762 TERM 1 Drain TERM 2 Gate TERM 3 Source NO

20、TES: 1. Dimension are in inches. 2. Millimeters are given for information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration TO-276AA, SMD-0.5 (U3). Provid

21、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/757A 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification

22、shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall b

23、e as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, figure 1 (T3) and figure 2 (U3) herein. For 2N7625T3, methods used for electrical isolation of the terminals shall employ materials that contain a minim

24、um of 90 percent Al2O3 (ceramic). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip constructi

25、on shall not be permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to t

26、he accumulation of static charge. The following handling practices shall be followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam o

27、r carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenev

28、er bias voltage is to be applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirements. The electrical test requirements shall be the subgr

29、oups specified in table I herein. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted wit

30、hout license from IHS-,-,-MIL-PRF-19500/757A 6 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualif

31、ication inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sh

32、eet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1.1 SEE. Design capability shall be tested on the initial

33、qualification and thereafter whenever a major die design or process change is introduced (see table III). End-point measurements shall be in accordance with table II. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/757A 7 * 4.3 Screenin

34、g (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Mea

35、surement of MIL-PRF-19500) (1) (2) JANS JANTXV (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAS(see 4.3.2) Method 3470 of MIL-STD-750, EAS(see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) Method 3161 of MIL-STD-750, thermal

36、 impedance, (see 4.3.3) 9 Subgroup 2 of table I herein Not applicable IDSS1, IGSSF1, IGSSR1as minimum 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 perce

37、nt of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 0.2 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test cond

38、ition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 0.2 A dc or 100 percent of initial value, whichever is

39、 greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. Subgroup 2 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 0.2 A dc or 100 percent of

40、initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall

41、be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/757A 8 4.3.1 Gate stress test. Apply VGS= 15 V mini

42、mum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current (IAS) ID1. b. Peak gate voltage (VGS) -5 V dc (up to max rated VGS). c. Gate to source resistor (RGS) 25 RGS 200 . d. Initial case temperature +25C, +10C, -5C. e. Inductance: . ( )212EIV VVASDBR DDBRmH minimum. f.

43、Number of pulses to be applied 1 pulse minimum. g. Supply voltage (VDD) . -25 V dc (up to max VDS). 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and V

44、Hwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for quality conformance inspection in accordance with MIL-PRF-19500. 4.4.1

45、Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the co

46、nditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.2 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition

47、 B3 1051 Test condition G, 100 cycles. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated VGS; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated VDS; TA= +175C, t = 120 hours minimum; or TA= +1

48、50C, t = 240 hours minimum. 4.4.2.3 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition C, 25 cycles. B3 1042 Accelerated steady-state gate bias, condition B, VGS= rated VGS; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum; and accelerated steady-state reverse bias, condition A, VDS= rated VDS; TA= +175C, t = 170 hours minimum; or TA= +150C, t = 340 hours minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/