DLA MIL-PRF-19500 759 REV A-2012 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR N-CHANNEL AND P-CHANNEL LOGIC-LEVEL SILI.pdf

1、 MIL-PRF-19500/759A 20 January 2012 SUPERSEDING MIL-PRF-19500/759 1 June 2011 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JA

2、NSR, F This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requireme

3、nts for dual N-channel and P-channel, enhancement-mode, low-threshold logic level, MOSFET, radiation hardened (total dose and single event effects(SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ra

4、ting (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions. * 1.2 Physical dimensions. See figure 1, UD (LCC-6). * 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(free air) (1) TA= +25C RJA(2) VDS= VDGVDS= VDGVGSVGSTJand TSTGN-channel P-channel N-chan

5、nel P-channel W C/W V dc V dc V dc V dc C 2N7632UD 1.0 125 100 -100 20 20 -55 to (each channel device) (each N or P) +150 Type ID1 (3) (4) TC= +25C ID2 TC= +100C ISIDM (5) N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel A dc A dc A dc A dc A dc A dc A (pk) A (pk) 2N76

6、32UD 0.92 -0.65 0.58 -0.41 0.92 -0.65 3.68 -2.60 (See notes next page) AMSC N/A FSC 5961INCH-POUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact i

7、nformation can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 April 2012. Provided by IHSNot for

8、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/759A 2 * 1.3 Maximum ratings. - continued. (1) Derate linearly 0.008 W/C (each channel) for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit

9、. IDis limited by package and internal construction. (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). * 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 0.25mAdc VGS(TH)1VDS VGSID= 0.25 mA dc Max IDSS1VGS= 0 VDS= 80 percent rate

10、d VDSMax rDS(on)(1) VGS= 4.5V, ID= ID2TJ= +25C TJ= +150C N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel V dc V dc V dc V dc A dc A dc Min Max Min Max 2N7632UD 100 -100 1.0 2.0 -1.0 -2.0 1 1 0.70 1.65 1.19 2.39 Type EAS IAS=ID1EAS IAS=ID1N-channel

11、P-channel 2N7632UD mJ 19.3 mJ 34 (1) Pulsed (see 4.5.1). ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/759A 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specifie

12、d in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that

13、they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to

14、the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods fo

15、r Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise

16、 noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Pro

17、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/759A 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from the case. 4 N is the quantity of terminal positions. 5. Th

18、e package shall meet dimension A without solder. Maximum allowable solder thickness is .006 inch (0.15 mm). 6 Applied solder to the terminals will increase flatness tolerance by additional .004 inch (0.10 mm). 7. Q1 is N-channel. Q2 is P-channel. All are un-committed. 8. In accordance with ASME Y14.

19、5M, diameters are equivalent to x symbology. * FIGURE 1. Dimensions and configuration of leadless chip carrier (LCC-6). Pin no. Transistor 1 Drain no. 1 2 Gate no. 1 3 Gate no. 2 4 Drain no. 2 5 Source no. 2 6 Source no. 1 Dimensions Symbol Inches Millimeters Min Max Min Max BL .240 .250 6.10 6.35 B

20、L2.250 6.35 BW .165 .175 4.19 4.45 BW2.175 4.45 CH .044 .080 1.12 2.03 LH .026 .039 0.66 0.99 LL1.060 .070 1.52 1.78 LL2.082 .098 2.08 2.49 LS1.095 .105 2.41 2.67 LS2.045 .055 1.14 1.40 LW .022 .028 0.56 0.71 UD Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

21、m IHS-,-,-MIL-PRF-19500/759A 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualif

22、ying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. Interfac

23、e and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 (UD) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.

24、2). 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be

25、handled with certain precautions to avoid damage due to the accumulation of static charge. The following handling practices shall be followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle de

26、vices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any le

27、ad. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirem

28、ents. The electrical test requirements shall be the subgroups specified in table I herein. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHS

29、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/759A 6 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conform

30、ance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualificatio

31、n was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1

32、.1 SEE. Design capability shall be tested on the initial qualification and thereafter whenever a major die design or process change is introduced (see table III). End-point measurements shall be in accordance with table II. Provided by IHSNot for ResaleNo reproduction or networking permitted without

33、 license from IHS-,-,-MIL-PRF-19500/759A 7 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I her

34、ein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) (1) (2) JANS JANTXV (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAS(see 4.3.2) Method 3470 of MIL-STD-750, EAS(see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal imp

35、edance, (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) 9 Subgroup 2 of table I herein Not applicable IDSS1, IGSSF1, IGSSR1as minimum 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgr

36、oup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 0.2 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of t

37、able I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 =

38、 0.2 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. Subgroup 2 of table I herein IGSSF1 = 20 nA dc or +100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, w

39、hichever is greater. IDSS1 = 0.2 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1,

40、 IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a. JANTXV levels do not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/759A

41、8 4.3.1 Gate stress test. Apply VGS= 15 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current (IAS) ID1. b. Peak gate voltage (VGS) 10 V dc (up to max rated VGS). c. Gate to source resistor (RGS) 25 RGS 200 . d. Initial case temperature +25C, +10C, -5C. e. Induc

42、tance: . ( )212EIV VVASDBR DDBRmH minimum. f. Number of pulses to be applied 1 pulse minimum. g. Supply voltage (VDD) . 25 V dc (up to max VDS). 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that m

43、ethod for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be co

44、nducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E

45、-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cyc

46、les. B3 2077 SEM. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated VGS; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated VDS; TA= +175C, t = 120 hours minimum; or TA= +150C, t = 240 hours mi

47、nimum. B5 2037 Test condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/759A 9 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition C, 25 cycles. B3 1042 Accelerate

48、d steady-state gate bias, condition B, VGS= rated VGS; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum; and accelerated steady-state reverse bias, condition A, VDS= rated VDS; TA= +175C, t = 170 hours minimum; or TA= +150C, t = 340 hours minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Metho