DLA MIL-PRF-19500 765 A-2013 SEMICONDUCTOR DEVICE DIODE SILICON DUAL SCHOTTKY COMMON CATHODE TYPE 1N7072CCT3 AND 1N7078U3 JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/765A 18 March 2013 SUPERSEDING MIL-PRF-19500/765 23 March 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, TYPE 1N7072CCT3, AND 1N7078U3 JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and

2、Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon, dual Schottky, center-tap power rectifier diode fo

3、r use in high frequency switching power supplies and resonant power converters. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (U3) and figure 2 (TO-257AA). 1.3 Maximum ratings. Unless otherwise specified, TA= +

4、25C. Column 1 Column 2 Column 3 Column 4 Column 5 Column 6 Types VRWMIO(1) (2) IFSM(3)tp= 8.3 ms TC= +25C RJC (2) (4) RJC(3) (4) TSTG and TJV dc A dc A (pk) C/W C/W C 1N7072CCT3 30 16A 150A 0.8 1.6 -65 to +150 1N7078U3 30 30A 150A 1.6 1.6 -65 to +150 (1) See temperature-current derating curves on fi

5、gures 3 and 4. (2) Entire package. (3) Each leg. (4) See thermal impedance curves on figures 5 and 6. 1.4 Primary electrical characteristics. RJC= 0.8C/W maximum entire package for 1N7072CCT3; RJC= 1.6C/W maximum entire package for 1N7078U3. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or q

6、uestions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at htt

7、ps:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 June 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/765A 2 NOTES: 1. Dimensions are in inches.

8、 2. Millimeters are given for general information only. 3. Dimensions are in accordance with ASME Y14.5M, diameters are equivalent to x symbology. 4. Suffix “U3C” indicates a ceramic lid on package. FIGURE 1. Dimensions and configuration, 1N7078U3. Ltr Dimensions Inches Millimeters Min Max Min Max B

9、L .395 .405 10.03 10.29 BW .291 .301 7.39 7.65 CH .108 .122 2.74 3.12 LH .010 .020 0.25 0.51 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.92 3.18 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 Q1 .030 0.76 Q2 .030 0.76 1N7078U3 2, 3 1 U3 Provided by IHSNot for

10、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/765A 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configurati

11、on for 1N7072CCT3 (TO-257AA). Ltr Dimensions Inches Millimeters Min Max Min Max BL .410 .430 10.41 10.92 CH .190 .200 4.83 5.08 LD .025 .040 0.64 1.02 LL .500 .750 12.70 19.05 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035

12、 .045 0.89 1.14 TW .410 .420 10.41 10.67 1N7072CCT3 T3 TO-257 1 3 2 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/765A 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of

13、 this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specifie

14、d requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein

15、. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. *

16、(Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, i

17、n the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The indiv

18、idual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers l

19、ist (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19

20、500, and on figures 1 and 2 herein. Methods used for electrical isolation of the terminal feedthroughs for the TO-257 package shall employ materials that contain a minimum of 90 percent Al2O3(ceramic). 3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figures 1 and 2 he

21、rein. 3.4.2 Lead material, finish, and formation. Lead material for the TO-257 package shall be Kovar, Alloy 52, or CuZr; a copper core or plated core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead formation, material,

22、or finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of table E-IV of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, sub

23、group 2 herein. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II here

24、in. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/765A 5 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality

25、 and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspect

26、ion (see 4.4 and tables I and II herein). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was

27、 awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screen

28、ing (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (table E-IV of

29、 MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3b Method 4066 of MIL-STD-750, condition A, one pulse, tp= 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. Method 4066 of MIL-STD-750, condition A, one pulse, tp= 8.3 ms, IO= 0, VRWM= 0, IFSM= see 1.3 herein. 3c Thermal impedance (see 4.3.

30、2). Thermal impedance (see 4.3.2). 3d Avalanche energy test (see 4.3.3). Avalanche energy test (see 4.3.3). 9, 10 Not applicable. Not applicable. 11 VF1and IR1.VF1and IR1.12 See 4.3.1. 240 hours, minimum. See 4.3.1. 48 hours minimum. 13 Subgroup 2 and 3 of table I herein, VF1,VF2,VF3, and IR1; VF1=

31、50 mV (pk); VF2= 50 mV (pk); VF3= 50 mV (pk); IR1= 100 percent from the initial value or 500 uA, whichever is greater. Subgroup 2 of table I herein; VF1,VF2,VF3,and IR1; VF1= 50 mV (pk); VF2= 50 mV (pk); VF3= 50 mV (pk); IR1= 100 percent from the initial value or 500 uA, whichever is greater. 4.3.1

32、High temperature reverse bias. Reverse bias conditions are as follows: Method 1038 of MIL-STD-750, test condition A, VR= 24 V dc; TJ= +100C. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines in th

33、at method for determining IM, IH, tH, and tMD. Measurement delay time (tMD) = 70 s max. See table III, subgroup 4 and figures 5 and 6 herein. 4.3.3 Avalanche energy test. The avalanche energy test is to be performed in accordance with method 4064 of MIL-STD-750 using the circuit as shown on figure 7

34、 or equivalent. The Schottky rectifier under test must be capable of absorbing the reverse energy, as follows: IAS= 1A, Vbr = 30 V minimum, L = 100 H. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/765A 6 4.4 Conformance inspection. Co

35、nformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable st

36、eps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accorda

37、nce with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TC= +85C, IF= 2 A minimum for 2,000 cycle

38、s. B5 1038 Condition A, VR= 24 V dc, TJ= +100C, t = 340 hours min; heat sinking allowed. This test shall be extended to 1,000 hours for each wafer. As an alternative method a ten dice sample (or 1 die per wafer whichever is greater) from each individual wafer shall be qualified for 1,000 hours minim

39、um, then each screened inspection lot requires 340 hours minimum when selected from qualified wafers. 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. 4.4.3 Group C inspection. Group C ins

40、pection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shal

41、l be in accordance with table II herein. Subgroup Method Condition C2 2036 Condition A, weight = 10 lbs, t = 15 seconds. Not applicable for U3 package. C5 4081 Limit for thermal resistance for 1N7072CCT3 is 1.6C/W for each diode. Limit for thermal resistance for 1N7078U3 is 1.6C/W for each diode. C6

42、 1037 TC= +85C, IF= 2 A minimum for 6,000 cycles. C6 1038 Condition A, VR= 24 V dc, TJ= +100C, t = 340 hours minimum (for TX, TXV only); heat sinking allowed. This test shall be extended to 1,000 hours for each wafer. Separate samples may be used. As an alternative method a ten dice sample (or 1 die

43、 per wafer whichever is greater) from each individual wafer shall be qualified for 1,000 hours minimum, then each screened inspection lot requires 340 hours minimum when selected from qualified wafers. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

44、MIL-PRF-19500/765A 7 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Delta measurements shall be in accordance with table II herein. 4.5 Methods of inspect

45、ion. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-P

46、RF-19500/765A 8 TABLE I. Group A inspection. 1/ 2/ Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3/ ZJXC/W Forward voltage 4011 Pulsed test (see 4.5.1) VF11N7072 1N7078 IF= 7.5 A (pk) IF= 15 A (pk) 0

47、.48 0.51 V dc V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF2 1N7072 1N7078 IF= 15 A (pk) IF= 20 A (pk) 0.58 0.55 V dc V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF3 1N7072 1N7078 IF= 16 A (pk) IF= 30 A (pk) 0.60 0.62 V dc V dc Reverse current 4016 DC method IR11N7072 1N7078 VR= 30 V VR

48、= 30 V 1.0 1.0 mA dc mA dc Subgroup 3 High temperature operation: TC= +125C Forward voltage 4011 Pulsed test (see 4.5.1) VF41N7072 1N7078 IF= 7.5 A (pk) IF= 15 A (pk) 0.365 0.41 V dc V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF5 1N7072 1N7078 IF= 15 A (pk) IF= 20 A (pk) 0.52 0.47 V dc V dc F

49、orward voltage 4011 Pulsed test (see 4.5.1) VF6 1N7072 1N7078 IF= 16 A (pk) IF= 30 A (pk) 0.54 0.57 V dc V dc Reverse current 4016 DC method; IR2 1N7072 1N7078 VR= 30 V VR= 30 V 150 150 mA dc mA dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-