DLA MIL-PRF-19500 767 A-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON LOW-POWER TYPES 2N5551 AND 2N5551UB JAN JANTX JANTXV JANS JANSR JANHC AND JANKC.pdf

1、 MIL-PRF-19500/767A 5 September 2013 SUPERSEDING MIL-PRF-19500/767 11 January 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N5551 AND 2N5551UB, JAN, JANTX, JANTXV, JANS, JANSR, JANHC, AND JANKC This specification is approved for use by all Dep

2、artments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, low-power transistors. Four levels

3、of product assurance are provided for each device type as specified in MIL-PRF-19500, two levels of product assurance are provided for each unecapsulated type die. Provision for radiation hardness assurance RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device p

4、refix to identify devices which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (UB). * 1.3 Maximum ratings unless otherwise specified TA= +25C. Type PT1(1) (2) TC= +25C PT2(1) TA= +25C PT3(1) TSP(IN)= +25C RJARJSP(IS)VCBO VCEO VEBOICTJand TSTGUB W 1.2 W 0.36 W1 C/W 250C/W 80V dc

5、180 V dc 160 V dc 6 mA dc500 C -65 to +200NOTES: (1) For thermal impedance curve, for 2N5551 see figures 2 and 3 for TA +25C. (2) For Variants with tin-lead plating or hot solder dip lead finish all testing, and any handling, performed at TA +125C shall be carried out in a 100 percent inert atmosphe

6、re. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this

7、 address information using the ASSIST Online database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this document shall be completed by 5 December 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

8、S-,-,-MIL-PRF-19500/767A 2 1.4 Primary electrical characteristics. Limits hFE1 (1) hFE2 (1) hFE3(1) hfe VCE(SAT)1 (1) VBE(SAT) (1) Vce= -5 V dc IC= -1 mA dc Vce= 5 V dc IC= 10 mA dc Vce= 5 V dc IC= 50 mA dc f = 20 MHz Vce= 10 V dc IC= 10 mA dc IC= 0 mA dc IB= 1.0 mA dc IC= 10 mA dc IB= 1.0 mA dc Min

9、 Max 80 80 250 30 2.5 mV dc 150 mV dc 1 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended f

10、or additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Governm

11、ent documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF

12、DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardi

13、zation Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes preceden

14、ce. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/767A 3 Symbol Dimensions Symbol Dimensions Inches Millimete

15、rs Inches Millimeters Min Max Min Max Min Max Min Max BH .046 .056 1.17 1.42 LS .071 .079 1.80 2.01 BL .115 .128 2.92 3.25 LW .016 .024 0.41 0.61 BW .085 .108 2.16 2.74 r .008 TYP 0.20 TYP CL .128 3.25 r1 .012 TYP 0.30 TYP CW .108 2.74 r2 .022 TYP 0.56 TYP LL1 .022 .038 0.56 0.96 LL2 .017 .035 0.43

16、0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalen

17、t to x symbology. FIGURE 1. Physical dimensions, surface mount (2N5551UB). UBProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/767A 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and

18、 as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, sy

19、mbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. RJAThermal resistance junction to ambient. RJCThermal resistance junction to case. UB Surface mount case outlines (see figure 1). 3.4 Interface and physical dimensions.

20、Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.

21、2). 3.4.2 Marking. Devices shall be marked in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J

22、, JX, JV, and JS respectively. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN design

23、ators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall b

24、e as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements

25、specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/767A 5 4.2 Qualification

26、 inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet tha

27、t did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 Screening (list applicable JANS, JANTX, and JANTXV levels). Scr

28、eening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS JANT

29、X and JANTXV levels (1) 3a Thermal impedance (see 4.3.2). Thermal impedance (see 4.3.2). 7 Optional Optional 9 ICBO1 hFE2 Not applicable 11 ICBO1 hFE2 ICBO1= 100 percent of initial value or 5 nA dc, whichever is greater; hFE3= 15 percent of initial value. ICBO1 hFE212 See 4.3.1. See 4.3.1. 13 ICBO1=

30、 100 percent of initial value or 5 nA dc, whichever is greater; hFE2= 15 percent of initial value, subgroup 2 and 3 of table I herein. ICBO1= 100 percent of initial value or 5 nA dc, whichever is greater; hFE2= 15 percent of initial value, subgroup 2 of table I herein. 14 Required Required (1) Shall

31、 be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD

32、= 75 percent of PTmaximum rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required.

33、 In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method fo

34、r determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See group E, subgroup 4, table III herein. 4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance

35、”. As a minimum, die shall be 100-percent probed to ensure compliance with group A, subgroup 2, table I. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

36、-,-,-MIL-PRF-19500/767A 6 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. See 4.4.2.2 f

37、or JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection (JANS), table E-VIA of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB= 10 V dc, adjust device current, or power, to achieve a minim

38、um TJof +100C. B5 1027 VCB= 10 V dc; PD 100 percent of maximum rated PT(see 1.3). (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table E-VIA, adjust TAor PDto achieve TJ= +275C

39、 minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TAor PDto achieve a TJ= +225C minimum. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. I

40、n addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB= 10 V dc, power shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 perc

41、ent of maximum rated PTas defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life, TA= 150C, VCB= 80 per

42、cent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours TA= +200C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV

43、 samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating pro

44、ne to oxidation at high temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/767A 7 4.4.3 Group C inspec

45、tion. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) shall be in accordance w

46、ith table I, subgroup 2 herein. 4.4.3.1 Group C inspection (JANS), table E-VII of MIL-PRF-19500. Subgroup Method Condition C5 3131 RJAand RJConly, as applicable (see 1.3 and 4.3.2) and in accordance with thermal impedance curves. C6 1026 1,000 hours at VCB= 10 V dc; power shall be applied to achieve

47、 TJ= +150C minimum and a minimum of PD= 75 percent of maximum rated PTas defined in 1.3 n = 45, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 4.4.3

48、.2 Group C inspection (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500. Subgroup Method Condition C5 3131 RJAand RJConly, as applicable (see 1.3 and 4.3.2) and in accordance with thermal impedance curves. C6 1026 Not applicable. 4.4.3.3 Group C sample selection. Samples selected from group C i

49、nspection shall be chosen at random from any lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of fin