DLA MIL-PRF-19500 771-2012 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY DUAL CENTER TAP TYPE 1N7059CCT3 AND SINGLE TYPE 1N7060U3 JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/771 27 July 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N7059CCT3, AND SINGLE TYPE 1N7060U3, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defens

2、e. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, schottky power rectifier diodes. Four levels of product assurance are provided for each

3、device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (U3) and figure 2 (TO-257AA). 1.3 Maximum ratings. Unless otherwise specified, maximum ratings (TA= +25C). Column 1 Column 2 Column 3 Column 4 Column 5 Column 6 Types (1) VRWMIO (1)(2)IFSM (3)tp= 8.3 ms, TC= +25C RJC (2

4、)RJC (3)TSTGand TJV dc A dc A (pk) C/W C/W C 1N7059CCT3 60 16 125 1.0 2.0 -65 to +150 1N7060U3 60 30 120 2.0 2.0 (1) See temperature-current derating curves in figures 3 and 4 . (2) For each package (3) For each leg, see figures 5 and 6. 1.4 Primary electrical characteristics. RJC= 1.0C/W maximum en

5、tire package for 1N7059CCT3, RJC= 2.0C/W maximum entire package for 1N7060U3. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since c

6、ontact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/771 2 NOTES: 1. Dimensions are in

7、 inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration 1N7060U3. Dimensions Ltr Inches Millimeters Min Max Min Max BL .395 .405 10.04 10.28 BW .291 .301 7.40 7.64 CH .108 .121

8、2.76 3.06 LH .010 .020 0.25 0.51 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.93 3.17 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 Q1 .030 0.762 Q2 .030 0.762 U3 2, 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I

9、HS-,-,-MIL-PRF-19500/771 3 1N7059CCT3 TERM 1 = ANODE TERM 2 = CATHODE TERM 3 = ANODE NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration 1N7059CCT

10、3 (TO-257AA). Ltr Dimensions Inches Millimeters Min Max Min Max BL .410 .430 10.41 10.92 CH .190 .200 4.83 5.08 LD .025 .040 0.64 1.02 LL .500 .750 12.70 19.05 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14

11、TW .410 .420 10.41 10.67 TO-257 1N7059CCT3 2 1 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/771 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification.

12、 This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of do

13、cuments cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise s

14、pecified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these docum

15、ents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a confl

16、ict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirement

17、s shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contr

18、act award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (

19、U3) and figure 2 (TO-257AA) herein. Methods used for electrical isolation of the terminal feedthroughs for the TO-257AA shall employ materials that contain a minimum of 90 percent Al2O3(ceramic). 3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 and figure 2 he

20、rein. 3.4.2 Lead material, finish, and formation. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead formation, material, or finish is desired, it shall

21、 be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of table E-IV of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 herein. Provided by IH

22、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/771 5 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and table I herein. 3.6 Electrical test requiremen

23、ts. The electrical test requirements shall be as specified in tables I and II herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects

24、 that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II here

25、in). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the s

26、pecification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or

27、 networking permitted without license from IHS-,-,-MIL-PRF-19500/771 6 4.3 Screening (JANS, JANTXV and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that e

28、xceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3b Condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0. IFSM= see 1.3 herein. Condition A, one pulse, tp = 8.3 ms, IO= 0, VRWM= 0. IFSM= see 1.3 herein.

29、 (1) 3c Thermal impedance (see 4.3.2). Thermal impedance (see 4.3.2). 3d Avalanche energy test (see 4.3.3). Avalanche energy test (see 4.3.3). 9, 10 Not applicable. Not applicable. 11 VF1and IR1.VF1and IR1.12 see 4.3.1, 240 hours, minimum. see 4.3.1, 48 hours minimum. 13 Subgroups 2 and 3, of table

30、I herein, VF1and IR1, excluding thermal impedance; VF1= 50 mV (pk); VF2= 50 mV (pk); IR1= 100 percent from the initial value or 300 uA, whichever is greater. Subgroup 2, of table I herein excluding thermal impedance; VF1and IR1; VF1= 50 mV (pk); VF2= 50 mV (pk); IR1= 100 percent from the initial val

31、ue or 300 uA, whichever is greater. 14 Required. Required. 15 Required. Not applicable. 16 Required. Not applicable. (1) Thermal impedance shall be performed any time after screen 3. 4.3.1 Power burn-in conditions. Burn-in conditions are as follows: Method 1038 of MIL-STD-750, test condition A. TJ=

32、+100C; VR= 48 V dc. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD. Measurement delay time (tMD) = 70 s max. See table III, subgroup 4, and fi

33、gures 5 and 6. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/771 7 4.3.3 Avalanche energy test. The avalanche energy test is to be performed in accordance with method 4064 of MIL-STD-750 using the circuit as shown on figure 7 or equiv

34、alent. The Schottky rectifier under test must be capable of absorbing the reverse energy, as follows: IAS= 1A, Vbr = 60 V minimum, L = 100 H. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted

35、in accordance with appendix E, table E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the condi

36、tions specified for subgroup testing in tables E-VIA (JANS) and VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements sha

37、ll be in accordance with table II herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition A, VR= 48 V dc, TJ= +100C, t = 340 hours minimum; heat sinking allowed. This test shall be extend

38、ed to 1,000 hours for each wafer. As an alternative method a ten (10) dice sample from each individual wafer shall be qualified for 1,000 hours minimum then each screened inspection lot requires 340 hours minimum when selected from qualified wafers. 4.4.2.2 Group B inspection, table E-VIB (JAN, JANT

39、X, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/771 8 4.4.3 Group C inspection. Group C inspection shall be conducted in acco

40、rdance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II h

41、erein. Subgroup Method Condition C2 2036 Condition A, weight = 10 lbs, t = 15 seconds. Not applicable to U3 package. C5 4081 Limit for thermal resistance for 1N7059CCT3 is 2.0C/W for each diode. Limit for thermal resistance for 1N7060U3 is 2.0C/W for each diode. C6 1037 TC= +85C, IF= 2 A minimum for

42、 6,000 cycles. C6 1038 Condition A, VR= 48 V dc, TJ= +100C, t = 340 hours minimum (for TX, TXV only); heat sinking allowed. This test shall be extended to 1,000 hours for each wafer. As an alternative method a ten (10) dice sample from each individual wafer shall be qualified for 1,000 hours minimum

43、 then each screened inspection lot requires 340 hours minimum when selected from qualified wafers. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. 4.5 Meth

44、ods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

45、 IHS-,-,-MIL-PRF-19500/771 9 TABLE I. Group A inspection. Inspection 1/ 2/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3/ 3101 See 4.3.2 ZJXC/W Forward voltage 1N7059CCT3 1N7060U3 4011 Pulsed test (see 4.5.1)

46、 IF= 8 A (pk) IF= 30 A (pk) VF1.58 .92 V V Forward voltage 1N7059CCT3 1N7060U3 4011 Pulsed test (see 4.5.1) IF= 16 A (pk) IF= 60 A (pk) VF2.77 1.32 V V Reverse current 1N7059CCT3 1N7060U3 4016 DC method VR= 60 V VR= 60 V IR1.68 .6 mA mA Subgroup 3 High temperature operation: TC= +125 C Forward volta

47、ge 1N7059CCT3 1N7060U3 4011 Pulsed test (see 4.5.1) IF= 8 A (pk) IF= 30 A (pk) VF3.55 .88 V V Forward voltage 1N7059CCT3 1N7060U3 4011 Pulsed test (see 4.5.1) IF= 16 A (pk) IF= 60 A (pk) VF4.79 1.24 V V Reverse current 1N7059CCT3 1N7060U3 4016 DC method VR= 60 V VR= 60 V IR2150 100 mA mA Low tempera

48、ture operation: TC= -55C Forward voltage 1N7059CCT3 1N7060U3 4011 Pulsed test (see 4.5.1) IF= 8 A (pk) IF= 30 A (pk) VF5.63 .83 V V Forward voltage 1N7059CCT3 1N7060U3 4011 Pulsed test (see 4.5.1) IF= 16 A (pk) IF= 60 A (pk) VF6.79 1.18 V V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/771 10 TABLE I. Group A inspection Continued. Inspection 1/ 2/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 4 Junction capacitance 4001 VR= 5 V dc, f = 1 MHz, VSIG= 50 mV (p-