DLA SMD-5962-00520 REV F-2013 MICROCIRCUIT DIGITAL-LINEAR RADIATION HARDENED 8-CHANNEL SOURCE DRIVER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to IOUT, IF, VINas specified in paragraph 1.4, table IIA, PRR as specified in figure 3, and paragraph 4.1. - ro 00-08-01 R. MONNIN B Drawing updated to reflect current requirements. - gt 02-04-30 R. MONNIN C Add a new footnote under

2、paragraph 1.5 and Table I. - ro 05-06-15 R. MONNIN D Under paragraph 1.3, footnote 4/, delete 200 mA and replace with 300 mA. Delete Accelerated aging test. - ro 07-03-27 R. HEBER E Under paragraph 1.3, thermal resistance, junction-to-case limit, delete 16C/W and substitute 8C/W. - ro 10-07-07 C. SA

3、FFLE F Add device type 02. Make changes to paragraph 1.5 and add footnote 8/. Make changes to footnotes 1/ and 2/ as specified under table I. Make changes to paragraphs 3.2.5 and 4.4.4.2. Delete figure 4 radiation exposure circuit, paragraph 4.4.4.3 dose rate induced latchup testing, and device clas

4、s M references. - ro 13-07-02 C. SAFFLE REV SHEET REV F F F SHEET 15 16 17 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIR

5、CUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, 8-CHANNEL SOURCE DRIVER, MONOLITHIC SILICON DRAWING APPROVAL DATE 00-06-20 AMSC N/A REVI

6、SION LEVEL F SIZE A CAGE CODE 67268 5962-00520 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E485-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00520 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION L

7、EVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines

8、and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of the

9、ir evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R 00520 01 T V A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finis

10、h (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the

11、 circuit function as follows: Device type Generic number Circuit function 01 IS-2981RH Radiation hardened, 8-channel source driver 02 IS-2981EH Radiation hardened, 8-channel source driver 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance

12、level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outlin

13、e(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style V CDIP2-T18 18 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. Provided by IHSNot for ResaleNo reproduction or networki

14、ng permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00520 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) 80 V dc Pulsed collector current (IOUT) . -350 mA 2/ Time ave

15、raged collector current (IOUT) . -300 mA 2/ Pulse output clamp diode current (IF) . 350 mA Time averaged output clamp diode current (IF) 125 mA Input voltage (VIN) -0.3 V to VCC(20 V maximum) Output voltage (VOUT) 80 V dc 3/ Maximum power dissipation (PD): Any one driver, continuous 600 mW 4/ Total

16、package 2.3 W Soldering temperature +260C 5/ Junction temperature (TJ) . +175C Thermal resistance, junction-to-case (JC) . 8C/W Thermal resistance, junction-to-ambient (JA) 65C/W 1.4 Recommended operating conditions. Supply voltage (VCC) 80 V dc Operating ambient temperature range (TA) -55C to +125C

17、 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 01: 100 krads(Si) 6/ Device type 02 . 100 krads(Si) 7/ Maximum total dose available (dose rate 0.01 rad(Si)/s): Device type 02 . 50 krads(Si) 7/ Single event latch-up (SEL) . No latch up 8/ _ 1/ Stress

18、es above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Outputs may be paralleled to increase drive currents. 3/ The output may momentarily go as low as -1.75 V when the output clamp di

19、ode is activated with a -200 mA clamp surge current. 4/ Based on 300 mA continuous output current and maximum VCESATof 2 V. 5/ Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and lead shall not be resoldered until 3 minutes have elapsed. 6/ Device type 01 may b

20、e dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si). 7/ Device ty

21、pe 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 8/ Devices use dielectrically isolated (DI) techno

22、logy and latch up is physically not possible. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00520 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE

23、 DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT O

24、F DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103

25、- List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedenc

26、e. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirement

27、s. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3

28、.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V. 3.2.1 Case outline.

29、The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Test circuits. The test circuits shall be as specified on figure 2. 3.2.4 Timing test circuit and waveform. The timing circuit and waveform shall b

30、e as specified on figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and

31、postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test re

32、quirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00520 DLA LAND AND MARITIME COLUMBUS, O

33、HIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C VCC= 50 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Output leakage current (see figure 2, A) ICEXVCC= 80 V, VIN

34、= 0.25 V, VOUT= 0 V, pin under test 1,2,3 01, 02 -1 1 A Collector-emitter saturation voltage (see figure 2, B) VCESATVCC= 5 V, VIN= 2.4 V, IOUT= -350 mA, pulsed tested 1,2,3 01, 02 2.0 V M,D,P,L,R 1 2.2 Input current (outputs open) (see figure 2, C) IIN(ON)VCC= 80 V, VIN= 2.4 V 1,2,3 01, 02 225 A VC

35、C= 80 V, VIN= 3.85 V 450 VCC= 80 V, VIN= 12 V 1.7 mA IIN(OFF)VCC= 80 V, VIN= 0 V 1,2,3 -10 10 A Output source current 3/ (see figure 2, B) IOUTVIN= 2.4 V, VCE= 2.0 V 1,2,3 01, 02 -350 mA Supply current (outputs open) (see figure 2, D) ICCVCC= 80 V, VIN= 2.4 V, all inputs simultaneously 1,2,3 01, 02

36、5 mA Clamp diode leakage current (see figure 2, E) IRVCC= VOUT= 80 V 1,2,3 01, 02 50 A Clamp diode forward voltage (see figure 2, F) VFIF= 200 mA, VIN= VCC= open 1,2,3 01, 02 -1.5 V IF= 350 mA, VIN= VCC= open -1.75 See footnotes at end of table I. Provided by IHSNot for ResaleNo reproduction or netw

37、orking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00520 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C VCC= 50 V

38、 Group A subgroups Device type Limits Unit unless otherwise specified Min Max Turn-on delay time tPLHVCC= 35 V, RL= 175 , see figure 3 9,10,11 01, 02 2 s Turn-off delay time tPHLVCC= 35 V, RL= 175 , see figure 3 9,10,11 01, 02 11 s 1/ RHA device type 01 supplied to this drawing will meet all levels

39、M, D, P, L, and R of irradiation. However, device type 01 is only tested at the “R” level in accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein). RHA device type 02 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for condition A and levels M, D, P, and

40、 L for condition D. However, device type 02 is only tested at the “R” level in accordance with MIL-STD-883, method 1019, condition A and tested at the “L” level in accordance with MIL-STD-883, method 1019, condition D (see 1.5 herein). Pre and post irradiation values are identical unless otherwise s

41、pecified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ RHA device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed on

42、ly for the conditions specified in MIL-STD-883, method 1019, condition A. 3/ If not tested, shall be guaranteed to the limits specified in table I herein. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages wher

43、e marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MI

44、L-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacture

45、r in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T and V, the req

46、uirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permit

47、ted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00520 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 Device types 01, 02 Case outline V Terminal number Terminal symbol 1 INPUT 1 2 INPUT 2 3 INPUT 3 4 INPUT 4 5 INPUT 5 6 INPUT

48、 6 7 INPUT 7 8 INPUT 8 9 VCC10 GND 11 OUTPUT 8 12 OUTPUT 7 13 OUTPUT 6 14 OUTPUT 5 15 OUTPUT 4 16 OUTPUT 3 17 OUTPUT 2 18 OUTPUT 1 FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00520 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 8 DSCC FORM 2234 APR 97 FIGURE 2. Test circuits. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,