DLA SMD-5962-00523 REV L-2013 MICROCIRCUIT LINEAR RADIATION HARDENED 2 5 V SHUNT DIODE REGULATOR MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to case outline Y terminal symbols as specified in figure 2. - ro 00-11-07 R. MONNIN B Make change to power dissipation as specified under 1.3. - ro 01-04-20 R. MONNIN C Delete input voltage and power dissipation limits and replace wi

2、th reverse current and forward current limits as specified under 1.3. - ro 04-03-12 R. MONNIN D Make change to the post irradiation limits as specified in the reference voltage test under Table I. - ro 04-05-25 R. MONNIN E Add a new footnote under paragraph 1.5 and Table I. Add pin numbers to figure

3、 1 and add a note to figure 2. - ro 05-05-17 R. MONNIN F Add a new footnote to the conditions column header under Table I. Delete paragraph 4.4.4.1.1 accelerated aging test. Make change to paragraph A.4.3.1. - ro 06-01-18 R. MONNIN G Add two sentences to footnote 3/ as specified under Table I. - ro

4、08-11-05 R. HEBER H Make a clarification to paragraph 3.5 by adding back special part marking information. - ro 09-04-01 J. RODENBECK J Make correction to the zener voltage versus zener current test conditions column by deleting “100 mA” and substituting “10 mA”. - ro 10-04-20 C. SAFFLE K Make corre

5、ctions to die thickness and glassivation as specified under figure A-1. - ro 11-07-06 C. SAFFLE L Add device type 02 and figure A-2. Make changes to footnotes 2/, 3/ and add 4/ under paragraph 1.5. Make changes to footnotes 1/ and 2/ under table I. Delete paragraph 4.4.4.2 Dose rate burnout. Delete

6、figure 3 Radiation exposure circuit. Delete device class M references. - ro 13-09-10 C. SAFFLE REV SHEET REV L L L SHEET 15 16 17 REV STATUS REV L L L L L L L L L L L L L L OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3

7、990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, RADIATION HARDENED, 2.5 V SHUNT DIODE REGULATOR, MONOLITHIC S

8、ILICON DRAWING APPROVAL DATE 00-08-04 AMSC N/A REVISION LEVEL L SIZE A CAGE CODE 67268 5962-00523 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E489-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00523 DLA LAN

9、D AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes ar

10、e available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 00523 01 V X C Federal stock class designator RHA designator (see 1.2.1)

11、 Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-)

12、indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 IS-1009RH Radiation hardened, 2.5 V shunt regulator diode 02 IS-1009EH Radiation hardened, 2.5 V shunt regulator diode 1.2.3 Device class desi

13、gnator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follow

14、s: Outline letter Descriptive designator Terminals Package style X See figure 1 3 Can, similar to TO-206AB or TO-46 Y CBCC1-N3 3 Bottom terminal chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction o

15、r networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00523 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Reverse current 20 mA Forward current . 10 mA Lead temperature (solderin

16、g, 10 seconds) 265C Junction temperature (TJ) . 175C Storage temperature range . -65C to +150C Thermal resistance, junction-to-case (JC): Case X . 30C/W Case Y . 8C/W Thermal resistance, junction-to-ambient (JA): Case X . 300C/W Case Y . 60C/W 1.4 Recommended operating conditions. Input current (IIN

17、) 400 A to 10 mA Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 01: 300 krads(Si) 2/ Device type 02 . 300 krads(Si) 3/ Maximum total dose available (dose rate 0.01 rad(Si)/s): Device type 02 5

18、0 krads(Si) 3/ Single event latch-up (SEL) No latch up 4/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Device type 01 may be dose rate sensitive in a space environ

19、ment and may demonstrate enhanced low dose rate effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si). 3/ Device type 02 radiation end point limits for the

20、 noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 4/ Devices use dielectrically isolated (DI) technology and latch up is physically not poss

21、ible. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00523 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification,

22、 standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 -

23、Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings

24、. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between th

25、e text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for

26、device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements

27、 of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with

28、 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the prepar

29、ing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambie

30、nt operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I

31、HS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00523 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where mar

32、king of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38

33、535. Special marking for device classes Q and V for case outline X. The marking of the PIN number may be reduced to the RHA designator, the 5 digit drawing designator, and the device class (for example, F00523V for device class V on the 01 device type). The date code may be reduced to 3 digits (for

34、example, 026 where 0 is the last digit of the year and 26 is the seal week) for device class Q and V. Device type 01 part number marking for device class V F00523V. Device type 02 part number marking for device class V F00523V2. 3.5.1 Certification/compliance mark. The certification mark for device

35、classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certifica

36、te of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of confo

37、rmance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00523 DLA LAND AND MA

38、RITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Reference voltage VREFIL= 1 mA 1 01, 02 2.495 2.

39、505 V 2,3 2.480 2.510 M,D,P,L,R,F 1 2.49 2.515 Zener voltage versus zener current VZ/ 400 A IR 10 mA 1 01, 02 -6 +6 mV IZ2,3 -10 +10 M,D,P,L,R,F 1 -15 +15 Shunt resistance rZ4/ IR= 1 mA 1 01, 02 0 0.6 2,3 0 1.0 M,D,P,L,R,F 1 0 1.5 1/ RHA device type 01 supplied to this drawing will meet all levels M

40、, D, P, L, R, and F of irradiation. However, device type 01 is only tested at the “F” level in accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein). RHA device type 02 supplied to this drawing will meet all levels M, D, P, L, R, and F of irradiation for condition A and levels M, D, P

41、, and L for condition D. However, device type 02 is only tested at the “F” level in accordance with MIL-STD-883, method 1019, condition A and tested at the “L” level in accordance with MIL-STD-883, method 1019, condition D (see 1.5 herein). Pre and post irradiation values are identical unless otherw

42、ise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ RHA device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guarante

43、ed only for the conditions specified in MIL-STD-883, method 1019, condition A. 3/ Device is tested with 10 F shunt capacitance connected from V+ to V-, which provides optimum stability. This reference is susceptible to output oscillation for a certain range of shunt capacitance. Shunt capacitance va

44、lues from 1 nF to 3 F inclusive should be avoided. 4/ This parameter is guaranteed but not tested. This parameter is characterized upon initial design or process changes which affect this characteristic. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-

45、,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00523 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 7 DSCC FORM 2234 APR 97 Bottom view Symbol Inches Millimeters Notes Min Max Min Max A 0.065 0.085 1.65 2.16 b 0.016 0.021 0.41 0.53 D 0.209 0.230 5.31 5.84 D1 0.178 0.195 4.52 4.9

46、5 e 0.100 BSC 2.54 BSC e1 0.050 BSC 1.27 BSC F - 0.040 - 1.02 j 0.028 0.048 0.71 1.22 k 0.036 0.046 0.91 1.17 1 L 0.500 - 12.70 - 45 45 2 N 3 3 3 NOTES: 1. Measured from maximum diameter of the actual device. 2. Measured from tab centerline. 3. N is number of leads. 4. The U.S. government preferred

47、system of measurement is the metric SI system. However, since this item was originally designed using inch-pound units of measurement, in the event of conflict between the metric and inch-pound units, the inch-pound units shall take precedence. FIGURE 1. Case outline. Provided by IHSNot for ResaleNo

48、 reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00523 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 8 DSCC FORM 2234 APR 97 Device types 01, 02 Case outlines X Y Terminal number Terminal symbol 1 ADJUST V+ 2 V+ ADJUST 3 V- see note V- NOTE: For case X only, pin 3 is electrically tied to the case. FIGURE 2. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ST