DLA SMD-5962-00528 REV B-2006 MICROCIRCUIT HYBRID LINEAR 15-VOLT SINGLE CHANNEL DC-DC CONVERTER《线性混合微电路15V单通道直流-直流变换器》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. -sld 02-12-16 Raymond Monnin B Add paragraph 1.5 and note 2. Table I, add note for enhanced low dose rate effects. Paragraph 4.3.5.a, correct paragraph to add component tested dose rate. -sld 06-11

2、-21 Raymond Monnin REV SHEET REV SHEET REV STATUS REV B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Steve L. Duncan DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Michael C. Jones COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAW

3、ING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 00-08-03 MICROCIRCUIT, HYBRID, LINEAR, 15-VOLT, SINGLE CHANNEL, DC-DC CONVERTER AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-00528 SHEET 1 OF 11 DSCC FORM 2

4、233 APR 97 5962-E092-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00528 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This d

5、rawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in

6、 the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 - 00528 01 H X X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardn

7、ess assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic

8、number Circuit function 01 SLH2815S DC-DC converter, 1.5 W, 15 V output 1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as q

9、ualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliability class available. This level is intended for use in space applications. H Standard military quality class level. This level

10、 is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming fl

11、ow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C and D). E Designates devices which are based upon one of the other classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the de

12、vice acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufacturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may ha

13、ve a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00528 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline

14、(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 7 Dual-in-line 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Input voltage range -0.5

15、V dc to +50 V dc Power dissipation (PD) . 1.5 W Output power . 1.56 W Lead soldering temperature (10 seconds) +300C Storage temperature range -65C to +150C 1.4 Recommended operating conditions. Input voltage range +16 V dc to +40 V dc Case operating temperature range (TC). -55C to +125C 1.5 Radiatio

16、n features. Maximum total dose available (dose rate = 9 rad(Si)/s) 100 krad (Si) 2/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise speci

17、fied, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standa

18、rd Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from

19、the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however,

20、supersedes applicable laws and regulations unless a specific exemption has been obtained. 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ These parts may be dose rate

21、sensitive in a space enviroment and may demonstrate enhanced low dose rate effects. Radiation end-point limits for the the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition C, tested at 9 rad(Si)/s. Provided by IHSNot for ResaleNo reproductio

22、n or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00528 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for devic

23、e classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may elim

24、inate, modify or optimize the tests and inspections herein, however the performance requirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device

25、class. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal co

26、nnections shall be as specified on figure 2. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. Th

27、e electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addit

28、ion, the manufacturers vendor similar PIN may also be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection gro

29、up A lot sample, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing

30、activity (DSCC-VA) upon request. 3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DSCC-VA shall affirm that the manufacturers product meets the performance r

31、equirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in a

32、ccordance with MIL-PRF-38534 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria

33、 shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to either DSCC-VA or the acquiring activity upon request. Also, the test circuit sha

34、ll specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. (2) TAas specified in accordance with table I of method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified

35、 in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00528 DEFENSE SUPPLY CENTER

36、COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28V dc 0.5V, CL= 0 Group A subgroups Device type Limits Unit unless otherwise specified Min Max 1 14.85 15.15 Output volt

37、age VOUT IOUT= 50 mA 2,3 01 14.40 15.60 V dc L, R 1,2,3 01 14.20 15.80 Output current IOUT VIN= 16 V dc to 40V dc 1,2,3 01 100 mA L, R 1,2,3 01 100 1 200 VOUTripple voltage VRIPIOUT= 100 mA, B.W. = 10 kHz to 2 MHz 2,3 01 300 mVp-p L, R 1,2,3 01 300 1 300 IOUT= 100 mA, VIN = 16V dc to 40V dc 2,3 01 6

38、50 mV VOUTline regulation VRLINEL, R 1,2,3 01 650 VOUTload regulation VRLOADIOUT= 10 mA to 100 mA 1,2,3 01 700 mV L, R 1,2,3 01 900 Input current IINIOUT= 0 A Inhibit (pin 7) = 0 1,2,3 01 5 mA L, R 1,2,3 01 17 1 14 IOUT= 0 A Inhibit (pin 7) = open 2,3 01 17 mA L, R 1,2,3 01 20 1 250 IINripple curren

39、t IRIPIOUT= 100 mA, LIN = 6 H B.W. = 10 kHz to 10 MHz 2,3 01 300 mAp-p L,R 1,2,3 01 400 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00528 DEFENSE SUPPLY CENTER COLUMBUS COLU

40、MBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28V dc 0.5V, CL= 0 Group A subgroups Device type Limits Unit unless otherwise specified Min Max Efficiency Eff 1 01 80 % 2

41、,3 01 69 L, R 1,2,3 01 67 Isolation ISO Input to output or input to case or output to case. 500 V dc, TC= +25C 1 01 100 M L, R 1 01 100 Short circuit internal power dissipation, PDPIN POUT 1,2,3 01 1.2 W L, R 1,2,3 01 1.5 Switching frequency FSIOUT= 100 mA 4,5,6 01 220 320 kHz L, R 4,5,6 01 220 350

42、VOUTstep load transient 3/ VTLOAD50% load to/from 100% load 4,5,6 01 -700 +700 mV pk L, R 4,5,6 01 -700 +700 VOUTstep load transient recovery 3/ 4/ 5/ TTLOAD50% load to/from 100% load 4,5,6 01 400 s L, R 4,5,6 01 600 VOUTstep line transient 4/ 6/ VTLINEInput step 16 V dc to/from 40 V dc, IOUT= 100 m

43、A 4,5,6 01 -600 +600 mV pk L, R 4,5,6 01 -700 +700 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-00528 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL

44、B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28V dc 0.5V, CL= 0 Group A subgroups Device type Limits Unit unless otherwise specified Min Max VOUTstep line transient recovery 4/ 5/ TTLINEInput step 16 V dc

45、 to/from 40 V dc, IOUT= 100 mA 4,5,6 01 500 s L, R 4,5,6 01 800 Start up overshoot 4/ VtonOSIOUT= 100 mA 4,5,6 01 500 mV pk L, R 4,5,6 01 900 Start up delay 7/ TonDIOUT= 100 mA 4,5,6 01 20 ms L, R 4,5,6 01 30 Load fault recovery 4/ TrLF4,5,6 01 30 ms L,R 4,5,6 01 40 Capacitive load 4/ 8/ C L No effe

46、ct on dc performance, TC= +25C 4 01 100 F L, R 4 01 100 1/ Post irradiation testing shall be in accordance with 4.3.5 herein. 2/ These parts may be dose rate sensitive in a space environment and may demostrate enhanced low dose rate effects. Radiation end-point limits for the noted parameters are gu

47、aranteed only for the conditions as specified in MIL-STD-883, method 1019, condition C, tested at 9 rads(Si)/s. 3/ Load step transition time is greater than 10 microseconds. 4/ Parameter shall be tested as part of device characterization and after design and process changes. Thereafter, parameters s

48、hall be guaranteed to the limits specified in table I. 5/ Recovery time is measured from the initiation of the transient until VOUThas returned to within 1 percent of VOUT final value. 6/ Input step transition time greater than 10 microseconds. 7/ Start up delay time measurement is either for a step application of power at the input or the removal of a ground signal from the inhibit pin (pin 7) while power is applied to the input. 8/ Capacitive l